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FN9037.1
IS-2100ARH
Radiation Hardened High Frequency
Half Bridge Driver
The Radiation Hardened IS-2100ARH is a high frequency,
130V Half Bridge N-Channel MOSFET Driver IC, which is
functionally similar to industry standard 2110 types. The low-
side and high-side gate drivers are independently controlled.
This gives the user maximum flexibility in dead-time
selection and driver protocol.
In addition, the device has on-chip error detection and
correction circuitry, which monitors the state of the high-side
latch and compares it to the HIN signal. If they disagree, a
set or reset pulse is generated to correct the high-side latch.
This feature protects the high-side latch from single event
upsets (SEUs).
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for the IS-2100ARH are
contained in SMD 5962-99536. A "hotlink" is provided
on our website for downloading.
Features
Electrically Screened to DSCC SMD # 5962-99536
QML Qualified per MIL-PRF-38535 Requirements
Radiation Environment
- Maximum Total Dose . . . . . . . . . . . . . . . . . 300krad(SI)
- DI RSG Process Provides Latch-up Immunity
- SEU Rating. . . . . . . . . . . . . . . . . . . . . . 82MeV/mg/cm
2
- Vertical Device Architecture Reduces Sensitivity to Low
Dose Rates
Bootstrap Supply Max Voltage to 150V
Drives 1000pF Load at 1MHz with Rise and Fall Times of
30ns (Typ)
1.5A (Typ) Peak Output Current
Independent Inputs for Non-Half Bridge Topologies
Low DC Power Consumption . . . . . . . . . . . . . 60mW (Typ)
Operates with V
DD
= V
CC
Over 12V to 20V Range
Low-side Supply Undervoltage Protection
Applications
High Frequency Switch-Mode Power Supplies
Drivers for Inductive Loads
DC Motor Drivers
Pinout
IS-2100ARH
FLATPACK (CDFP4-F16)
TOP VIEW
Ordering Information
ORDERING NUMBER
INTERSIL MKT.
NUMBER
TEMP.
RANGE (
o
C)
5962F9953602VXC
IS9-2100ARH-Q
-55 to 125
5962F9953602QXC
IS9-2100ARH-8
-55 to 125
IS9-2100ARH/Proto
IS9-2100ARH/Proto
-55 to 125
LO
COM
V
CC
NC
NC
VS
VB
HO
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
NC
V
SS
LIN
SD
HIN
V
DD
NC
NC
Data Sheet
April 2003
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002. All Rights Reserved
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All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable.
However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4820
m x 3300
m (190 mils x 130 mils)
Thickness: 483
m
25.4
m (19 mils
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
1.0k
Top Metallization:
Type: ALSiCu
Thickness: 16.0k
2k
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
542
Metallization Mask Layout
IS-2100ARH
SD (13)
LIN (14)
V
SS
(15)
COM (2)
V
CC
(3)
HIN (12)
V
DD
(11)
HO (8)
VB (7)
VS (6)
LO (1)
IS-2100ARH
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