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Электронный компонент: 5962R0053801VXC

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1
TM
FN4703.4
IS-705RH
Radiation Hardened Power-Up/Down
Microprocessor Reset Circuit
The Radiation Hardened IS-705RH is
a monolithic device that monitors the
power supply voltage used by
satellite control units and provides a
reset output pulse during power-up and power-down. The
reset threshold is 4.65V (Typ) and the reset pulse width is set
at 200ms (Typ). A watchdog circuit is incorporated for easy
interfacing with microprocessors and controllers. If the
watchdog input has not been toggled within a preset
1.6s (Typ) time period, an output signal is generated, which
can be used as an interupt. The power function input (PFI)
may be used to monitor other voltage levels. The circuit has a
1.25V (Typ) threshold and provides a PFO output when low
voltage is detected. An active-low manual reset input in also
provided for direct control of the reset function.
Constructed with the Intersil UHF2X-CMOS process, these
devices have been specifically designed to provide highly
reliable performance in harsh radiation environments. This
process has been tested for single event latch-up and has
demonstrated an immunity to 90MeV/mg/cm
2
.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-00538. A "hot-link" is provided
on our homepage for downloading.
Pinout
IS9-705RH
FLATPACK
TOP VIEW
Features
Electrically Screened to SMD # 5962-00538
QML Qualified per MIL-PRF-38535 Requirements
Radiation Hardness
- Total Dose. . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)
- Single Event Latch-up . . . . . . . . . . . . >90MeV/mg/cm
2
Precision 4.65V Voltage Monitor
Wide Operating Supply Range . . . . . . . . . . . 1.2V to 5.5V
Low Supply Current . . . . . . . . . . . . . . . . . . . . 420
A (Typ)
200ms (Typ) RESET Pulse Width
Applications
Flight Computers
Controllers
Critical Microprocessor Power Monitoring
Reliable Replacement of Discrete Solutions
TM
MR
V
CC
GND
PFI
1
2
3
4
8
7
6
5
WDO
RESET
WDI
PFO
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
(
o
C)
5962R0053801QXC
IS9-705RH-8
-55 to 125
5962R0053801VXC
IS9-705RH-Q
-55 to 125
5962R0053801V9A
IS0-705RH-Q
-55 to 125
IS9-705RH/Proto
IS9-705RH/Proto
-55 to 125
Data Sheet
December 2001
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2001. All Rights Reserved
Star*PowerTM is a trademark of Intersil Americas Inc.
2
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Die Characteristics
DIE DIMENSIONS:
1500
m x 1830m (59 mils x 72 mils)
Thickness: 483
m 25.4m (19 mils 1 mil)
INTERFACE MATERIALS
Glassivation
Type: Nitride (Si
3
N
4
) over Silox (SiO
2
)
Nitride Thickness: 4.0k
1.0k
Silox Thickness: 12.0k
4.0k
Top Metallization
Top Metal 3: TiAlCu
Thickness: 0.8
m 0.02m
Metal 1 and 2: TiAlCu
Thickness: 0.4
m 0.01m
Substrate:
UHF2X-CMOS
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Backside internally connected to GND
(May be left floating or connected to GND.)
ADDITIONAL INFORMATION
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Metallization Mask Layout
IS-705RH
NOTES:
1. Octagonal trim pads should be left unconnected.
VCC (2)
GND (3)
PFI (4)
PFO (5)
WDI (6)
RESET (7)
WDO (8)
MR (1)
IS-705RH