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Электронный компонент: ACTS374D

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
ACTS374MS
Radiation Hardened
Octal D Flip-Flop, Three-State
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C
TOP VIEW
20 LEAD CERAMIC FLATPACK
MIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH C
TOP VIEW
11
12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
OE
Q0
D0
D1
Q1
Q2
D3
D2
Q3
GND
VCC
D7
D6
Q6
Q7
Q5
D5
D4
Q4
CP
2
3
4
5
6
7
8
1
20
19
18
17
16
15
14
13
OE
Q0
D0
D1
Q1
Q2
D2
D3
9
10
12
11
Q3
GND
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
CP
April 1995
Truth Table
INPUTS
OUTPUTS
OE
CP
Dn
Qn
L
H
H
L
L
L
L
X
X
Q0
H
X
X
Z
H = High Level
L = Low Level
X = Immaterial
Z = High Impedance
= Transition from Low to High Level
Q0
= the level of Q before the indicated input conditions
were established
Functional Diagram
D
Q
CP
D
CP
Q
OE
FF
COMMON CONTROLS
OE
1 OF 8
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
ACTS374DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead SBDIP
ACTS374KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
20 Lead Ceramic Flatpack
ACTS374D/Sample
+25
o
C
Sample
20 Lead SBDIP
ACTS374K/Sample
+25
o
C
Sample
20 Lead Ceramic Flatpack
ACTS374HMSR
+25
o
C
Die
Die
Spec Number
518828
File Number
3998
Features
1.25 Micron Radiation Hardened SOS CMOS
Total Dose 300K RAD (Si)
Single Event Upset (SEU) Immunity
<1 x 10
-10
Errors/Bit-Day (Typ)
SEU LET Threshold >80 MEV-cm
2
/mg
Dose Rate Upset >10
11
RAD (Si)/s, 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to ALSTTL Logic
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 0.8V Max
- VIH = VCC/2V Min
Input Current
1
A at VOL, VOH
Description
The Intersil ATCS374MS is a radiation hardened octal D-type
flip-flop with three-state outputs. The eight edge-triggered flip-
flops enter data into their registers on the low to high transition of
clock (CP). The Output Enable (OEN) controls the three-state
outputs and is independent of the register operation. When OEN
is high, the outputs will be in the high impedance state.
The ACTS374MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.
2
Specifications ACTS374MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.0V
Input Voltage Range . . . . . . . . . . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
50mA
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltages Reference to VSS)
Thermal Impedance
JA
JC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
72
o
C/W
24
o
C/W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . .
107
o
C/W
28
o
C/W
Maximum Package Power Dissipation at +125
o
C
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W
Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Maximum Device Power Dissipation . . . . . . . . . . . . . . . . . . .(TBD)W
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 Gates
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 10ns/V Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . VCC to VCC/2V
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 0.8V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
20
A
2, 3
+125
o
C, -55
o
C
-
400
A
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
1
+25
o
C
-12
-
mA
2, 3
+125
o
C, -55
o
C
-8
-
mA
Output Current
(Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
1
+25
o
C
12
-
mA
2, 3
+125
o
C, -55
o
C
8
-
mA
Output Voltage High
VOH
VCC = 5.5V, VIH = 2.75V
VIL = 0.8V, IOH = -50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC -0.1
-
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = -50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC -0.1
-
V
Output Voltage Low
VOL
VCC = 5.5V, VIH = 2.75V
VIL = 0.8V, IOH = 50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = 50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Input Leakage
Current
IIN
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
1.0
A
Three-State Output
Leakage Current
IOZ
VCC = 5.5V,
Force Voltage = 0V or VCC
1
+25
o
C
-
1
A
2, 3
+125
o
C, -55
o
C
-
35
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
V
NOTE:
1. All voltages referenced to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518828
3
Specifications ACTS374MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPHL1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
19
ns
10, 11
+125
o
C, -55
o
C
2
22
ns
TPLH1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
21
ns
TPZL1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
21
ns
TPZH1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
17
ns
10, 11
+125
o
C, -55
o
C
2
19
ns
TPLZ1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
16
ns
10, 11
+125
o
C, -55
o
C
2
18
ns
TPHZ1
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
9
+25
o
C
2
16
ns
10, 11
+125
o
C, -55
o
C
2
19
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTE
TEMP
LIMITS
UNITS
MIN
TYP
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
18
-
pF
+125
o
C
-
24
-
pF
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
-
10
pF
+125
o
C
-
-
10
pF
Output Capacitance
COUT
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
-
20
pF
+125
o
C
-
-
20
pF
Pulse Width Time
TW
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
5.5
-
-
ns
+125
o
C
6
-
-
ns
Setup Time
TSU
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
3.5
-
-
ns
+125
o
C
4
-
-
ns
Hold Time
TH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
3.5
-
-
ns
+125
o
C
4
-
-
ns
Maximum Frequency
CP
FMAX
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
0
-
75
MHz
+125
o
C
0
-
75
MHz
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number
518828
4
Specifications ACTS374MS
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMP
RAD LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
400
A
Delta ICC
DICC
VCC = 5.5V, VIN = VCC or GND,
1 Input = 3.4V
+25
o
C
-
1.6
mA
Output Current (Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC -0.4V, VIL = 0
+25
o
C
-8
-
mA
Output Current (Sink)
IOL
VCC = VIH = 4.5V, VOUT = 0.4V,
VIL = 0
+25
o
C
8
-
mA
Output Voltage High
VOH
VCC = 5.5V, VIH = 2.75V,
VIL = 0.8V, IOH = -50
A
+25
o
C
VCC -0.1
-
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = -50
A
+25
o
C
VCC -0.1
-
V
Output Voltage Low
VOL
VCC = 5.5V, VIH = 2.75V,
VIL = 0.8V, IOH = 50
A
+25
o
C
-
0.1
V
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = 50
A
+25
o
C
-
0.1
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
1
A
Three-State Output
Leakage Current
IOZ
VCC = 5.5V,
Force Voltage = 0V or VCC
+25
o
C
-
35
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 2)
+25
o
C
-
-
V
Propagation Delay
TPHL1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
22
ns
TPLH1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
21
ns
TPZL1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
21
ns
TPZH1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
19
ns
TPLZ1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
18
ns
TPHZ1
VCC = 4.5V, VIH = 3.0V, VIL = 0V
+25
o
C
2
19
ns
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. DELTA PARAMETERS (+25
o
C)
PARAMETER
SYMBOL
(NOTE 1)
DELTA LIMIT
UNITS
Supply Current
ICC
4.0
A
Three-State Leakage Current
IOZ
200
nA
Output Current
IOL/IOH
15
%
NOTE:
1. All delta calculations are referenced to 0 hour readings or pre-life readings.
Spec Number
518828
5
Specifications ACTS374MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
Interim Test 1 (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
Interim Test 2 (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test 3 (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTE:
1. Alternate Group A testing may be exercised in accordance with MIL-STD-883, Method 5005.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUP
METHOD
TEST
READ AND RECORD
PRE RAD
POST RAD
PRE RAD
POST RAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. BURN-IN TEST CONNECTIONS (+125
o
C < TA < 139
o
C)
OPEN
GROUND
1/2 VCC = 3V
0.5V
VCC = 6V
0.5V
OSCILLATOR
50kHz
25kHz
STATIC BURN-IN 1 (Note 1)
-
1, 3, 4, 7, 8, 10, 11,
13, 14, 17, 18
2, 5, 6, 9, 12, 15, 16, 19
20
-
-
STATIC BURN-IN 2 (Note 1)
-
10
2, 5, 6, 9, 12, 15, 16, 19
1, 3, 4, 7, 8, 11, 13,
14, 17, 18, 20
-
-
DYNAMIC BURN-IN (Note 1)
-
1, 10
2, 5, 6, 9, 12, 15, 16, 19
20
11
3, 4, 7, 8, 13,
14, 17, 18
NOTE:
1. Each pin except VCC and GND will have a series resistor of 500
5% for static burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS (TA = +25
o
C,
5
o
C)
FUNCTION
OPEN
GROUND
VCC = 5V
0.5V
Irradiation Circuit (Note 1)
2, 5, 6, 9, 12, 15, 16, 19
10
1, 3, 4, 7, 8, 11, 13, 14, 17, 18, 20
NOTE:
1. Each pin except VCC and GND will have a series resistor of 47k
5%. Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures.
Spec Number
518828