Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
BUZ32
9.5A, 200V, 0.400 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17412.
Features
9.5A, 200V
r
DS(ON)
= 0.400
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ32
TO-220AB
BUZ32
NOTE: When ordering, use the entire part number.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
October 1998
File Number
2416.1
[ /Title
(BUZ32)
/Subject
(9.5A,
200V,
0.400
Ohm, N-
Channel
Power
MOS-
FET)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FET,
TO-
220AB)
/Creator
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark
Data Sheet
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
BUZ32
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
200
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
200
V
Continuous Drain Current, T
C
= 55
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
9.5
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
38
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
75
W
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
150
mJ
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
E
IEC Climatic Category - DIN IEC 68-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
200
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 1mA (Figure 9)
2.1
3
4
V
Zero Gate Voltage Drain Current
I
DSS
T
J
= 25
o
C, V
DS
= 200V, V
GS
= 0V
-
20
250
A
T
J
= 125
o
C, V
DS
= 200V, V
GS
= 0V
-
100
1000
A
Gate to Source Leakage Current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
10
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 4.5A, V
GS
= 10V (Figure 8)
-
0.35
0.4
Forward Transconductance (Note 2)
gfs
V
DS
= 25V, I
D
= 4.5A (Figure 11)
2.2
5.0
-
S
Turn-On Delay Time
t
d(ON)
V
CC
= 30V, I
D
2.9A, V
GS
= 10V, R
GS
= 50
,
R
L
= 10
. (Figures 16, 17)
-
30
45
ns
Rise Time
t
r
-
40
60
ns
Turn-Off Delay Time
t
d(OFF)
-
110
140
ns
Fall Time
t
f
-
60
80
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 10)
-
1500
2000
pF
Output Capacitance
C
OSS
-
250
400
pF
Reverse Transfer Capacitance
C
RSS
-
70
120
pF
Thermal Resistance Junction to Case
R
JC
1.67
o
C/W
Thermal Resistance Junction to Ambient
R
JA
75
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
T
C
= 25
o
C
-
-
9.5
A
Pulsed Source to Drain Current
I
SDM
T
C
= 25
o
C
-
-
38
A
Source to Drain Diode Voltage
V
SD
T
J
= 25
o
C, I
SD
= 19A, V
GS
= 0V
-
1.3
1.7
V
Reverse Recovery Time
t
rr
T
J
= 25
o
C, I
SD
= 9.5A, dI
SD
/dt = 100A/
s,
V
R
= 100V
-
400
-
ns
Reverse Recovery Charge
Q
RR
-
6.0
-
C
NOTES:
2. Pulse Test: Pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 20V, starting T
J
= 25
o
C, L = 3.3
H, R
G
= 50
, I
PEAK
= 9A. (See Figures 14 and 15).
BUZ32
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
8
6
4
2
0
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
V
GS
10V
12
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
0.5
0.2
0.1
0.05
0.02
0.01
0
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
+ T
C
t
1
t
2
Z
JC,
TRANSIENT THERMAL IMPED
ANCE
1
0.1
0.01
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
I
D
, DRAIN CURRENT (A)
10
2
10
2
10
0
10
1
10
0
10
-1
10
3
10
s
1.5
s
1ms
10ms
100
s
DC
100ms
T
C
= 25
o
C
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
T
J
= MAX RATED
7.5V
20
15
10
5
0
0
10
20
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 7.0V
8.0V
10V
20V
P
D
= 75W
V
GS
= 6.5V
V
GS
= 6.0V
BUZ32
4
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
5
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
20
10
0
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
PULSE DURATION = 80
s
V
DS
= 25V
T
J
= 25
o
C
1.5
1.0
0.5
0
0
10
20
I
D
, DRAIN CURRENT (A)
r
DS(ON)
, DRAIN T
O
SOURCE
7.5V
7V
10V
20V
8V
9V
V
GS
= 5V
5.5V
6V
6.5V
ON RESIST
ANCE (
)
PULSE DURATION = 80
s
r
DS(ON)
, DRAIN T
O
SOURCE
0.6
0.3
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
0.9
80
V
GS
= 10V, I
D
= 4.5A
160
PULSE DURATION = 80
s
ON RESIST
ANCE (
)
-50
0
50
100
150
V
GS(TH)
, GA
TE THRESHOLD V
O
L
T
A
GE (V)
4
3
2
1
0
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 1mA
V
DS
= V
GS
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
10
0
10
-1
10
-2
C, CAP
A
CIT
ANCE (nF)
V
GS
= 0, f = 1MHz
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
8
6
4
2
0
0
10
20
I
D
, DRAIN CURRENT (A)
g
fs
, TRANSCONDUCT
ANCE (S)
V
DS
=
25V
PULSE DURATION = 80
s
T
J
= 25
o
C
BUZ32
5
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
0
0.5
1.0
1.5
2.0
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
10
1
10
0
10
-1
I
SD
, SOURCE T
O
DRAIN CURRENT (A)
PULSE DURATION = 80
s
T
J
= 150
o
C
T
J
= 25
o
C
2.5
3.0
15
10
5
0
0
10
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
I
D
= 14.3A
V
DS
= 40V
V
DS
= 160V
20
30
40
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
BUZ32
6
FIGURE 18. GATE CHARGE TEST CIRCUIT
FIGURE 19. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
0.3
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
V
DS
0.2
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
g(REF)
0
BUZ32
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