1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
BYW51-100, BYW51-150, BYW51-200
8A, 100V - 200V Ultrafast Dual Diodes
The BYW51 series devices are low forward voltage drop,
ultra-fast-recovery rectifiers (t
RR
< 35ns). They use a planar
ion-implanted epitaxial construction.
These devices are intended for use as output rectifiers and
fly-wheel diodes in a variety of high-frequency pulse-width-
modulated and switching regulators. Their low stored charge
and attendant fast reverse-recovery behavior minimize elec-
trical noise generation and in many circuits markedly reduce
the turn-on dissipation of the associated power switching
transistors.
Ordering Information
Features
Ultra Fast Recovery Time (<35ns)
Low Forward Voltage
Low Thermal Resistance
Planar Design
Wire-Bonded Construction
Applications
General Purpose
Power Switching Circuits to 100kHz
Full-Wave Rectification
Package
JEDEC TO-220AB
Symbol
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
BYW51-100
TO-220AB
BYW51100
BYW51-150
TO-220AB
BYW51150
BYW51-200
TO-220AB
BYW51200
NOTE: When ordering, use the entire part number.
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
K
A1
A2
Absolute Maximum Ratings
Per Junction
BYW51-100
BYW51-150
BYW51-200
UNITS
Maximum Peak Repetitive Reverse Voltage . . . . . . . . . . . V
RRM
100
150
200
V
Maximum Peak Surge Voltage . . . . . . . . . . . . . . . . . . . . . . V
RSM
110
165
220
V
Repetitive Peak Surge Current. . . . . . . . . . . . . . l
FRM
, t
P
< 10
s
100
100
100
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . l
F
(RMS), Total
20
20
20
A
Average Rectified forward Current . . . . . . . . . . . . . . l
F(AV)
, Total
T
C
= +125
o
C, a = 0.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
8
8
A
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . l
FSM
t
P
= 10ms, Sinusoidal
100
100
100
A
Maximum Power Dissipation . . . . . . . . . . . . . . P
D
, T
C
= +125
o
C
20
20
20
W
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . T
J
-40 + 150
-40 + 150
-40 + 150
o
C
T
L
(Lead Temperature During Soldering). . . . . . . . . . . . . . . . . . .
At Distance >
1
/
8
in. (3.17mm) From Case For 10s max.
260
260
260
o
C
June 1995
File Number
1412.2
3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Typical Performance Curves
FIGURE 1. PEAK SURGE FORWARD CURRENT vs SURGE
DURATION
FIGURE 2. THERMAL IMPEDANCE vs PULSE WIDTH
(PER JUNCTION)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE
T
J
= 100
o
C
REAPPLIED V
R
(PK) = V
RM
0
I
FSM
, PEAK SURGE (NON-REPETITIVE)
FOR
W
ARD CURRENT (A)
1
10
100
N, NUMBER OF HALF-CYCLES IN SURGE DURATION AT 50Hz
160
120
80
40
20
140
100
60
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1
10
1000
t
P
, PULSE WIDTH (ms)
100
R
JC
, THERMAL IMPED
ANCE (
o
C/W)
100
10
1
0.1
0.01
I
F
, FOR
W
ARD CURRENT (A)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
F
, FORWARD VOLTAGE DROP (V)
T
J
= +25
o
C
T
J
= +125
o
C
T
J
= +150
o
C
T
J
= +100
o
C
T
J
= -55
o
C
10,000
1000
100
10
1
0.1
0.01
0.01
0.1
1
10
1000
100
V
RM
, VOLTAGE IN % RATED V
RRM
(V)
I
R
, REVERSE CURRENT (
A)
T
J
= +25
o
C
T
J
= +125
o
C
T
J
= +100
o
C
T
J
= +150
o
C
BYW51-100, BYW51-150, BYW51-200
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