ChipFind - документация

Электронный компонент: CD4043BDMSR

Скачать:  PDF   ZIP
/home/web/doc/html/intersil/168306
background image
7-876
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
CD4043BMS
CD4044BMS
CMOS Quad 3 State R/S Latches
Pinout
CD4043BMS
TOP VIEW
CD4044BMS
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Q4
Q1
R1
S1
ENABLE
S2
VSS
R2
VDD
S4
NC
S3
R3
Q3
Q2
R4
NC = NO CONNECTION
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Q4
NC
S1
R1
ENABLE
R2
VSS
S2
VDD
R4
Q1
R3
S3
Q3
Q2
S4
NC = NO CONNECTION
Features
High Voltage Types (20V Rating)
Quad NOR R/S Latch- CD4043BMS
Quad NAND R/S Latch - CD4044BMS
3 State Outputs with Common Output ENABLE
Separate SET and RESET Inputs for Each Latch
NOR and NAND Configuration
5V, 10V and 15V Parametric Ratings
Standardized Symmetrical Output Characteristics
100% Tested for Quiescent Current at 20V
Maximum Input Current of 1
a at 18V Over Full Pack-
age-Temperature Range;
- 100nA at 18V and 25
o
C
Noise Margin (Over Full Package Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
Meets All Requirements of JEDEC Tentative Standard
No. 13B, "Standard Specifications for Description of `B'
Series CMOS Devices"
Applications
Holding Register in Multi-Register System
Four Bits of Independent Storage with Output ENABLE
Strobed Register
General Digital Logic
CD4043BMS for Positive Logic Systems
CD4044BMS for Negative Logic Systems
Description
CD4043BMS types are quad cross-coupled 3-state CMOS NOR
latches and the CD4044BMS types are quad cross-coupled 3-
state CMOS NAND latches. Each latch has a separate Q output
and individual SET and RESET inputs. The Q outputs are con-
trolled by a common ENABLE input. A logic "1" or high on the
ENABLE input connects the latch states to the Q outputs. A logic
"0" or low on the ENABLE input disconnects the latch states from
the Q outputs, results in an open circuit feature allows common
busing of the outputs.
The CD4043BMS and CD4044BMS are supplied in these 16-
lead outline packages:
Braze Seal DIP
*H4T
H4T
Frit Seal DIP
*H1C
HIE
Ceramic Flatpack
*H3X
H6W
*CD4043B Only
CD4044B Only
File Number
3311
December 1992
background image
7-877
Specifications CD4043BMS, CD4044BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16
1/32 Inch (1.59mm
0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
ja
jc
Ceramic DIP and FRIT Package . . . . .
80
o
C/W
20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . .
70
o
C/W
20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For TA = -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For TA = +100
o
C to +125
o
C (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1
+25
o
C
-
2
A
2
+125
o
C
-
200
A
VDD = 18V, VIN = VDD or GND
3
-55
o
C
-
2
A
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
1
+25
o
C
-100
-
nA
2
+125
o
C
-1000
-
nA
VDD = 18V
3
-55
o
C
-100
-
nA
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
1
+25
o
C
-
100
nA
2
+125
o
C
-
1000
nA
VDD = 18V
3
-55
o
C
-
100
nA
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
50
mV
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25
o
C, +125
o
C, -55
o
C 14.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25
o
C
0.53
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25
o
C
1.4
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25
o
C
3.5
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25
o
C
-
-0.53
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25
o
C
-
-1.8
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1
+25
o
C
-
-1.4
mA
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25
o
C
-
-3.5
mA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1
+25
o
C
-2.8
-0.7
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10
A
1
+25
o
C
0.7
2.8
V
Functional
F
VDD = 2.8V, VIN = VDD or GND
7
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND
7
+25
o
C
VDD = 18V, VIN = VDD or GND
8A
+125
o
C
VDD = 3V, VIN = VDD or GND
8B
-55
o
C
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
1.5
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
3.5
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
4
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
11
-
V
Tri-State Output
Leakage
IOZL
VIN = VDD or GND
VOUT = 0V
VDD = 20V
1
+25
o
C
-0.4
-
A
2
+125
o
C
-12
-
A
VDD = 18V
3
-55
o
C
-0.4
-
A
Tri-State Output
Leakage
IOZH
VIN = VDD or GND
VOUT = VDD
VDD = 20V
1
+25
o
C
-
0.4
A
2
+125
o
C
-
12
A
VDD = 18V
3
-55
o
C
-
0.4
A
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
background image
7-878
Specifications CD4043BMS, CD4044BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
Set or Reset to Q
TPHL
TPLH
VDD = 5V, VIN = VDD or GND
(Notes 1, 2)
9
+25
o
C
-
300
ns
10, 11
+125
o
C, -55
o
C
-
405
ns
Propagation Delay
3 - State Enable to Q
TPHZ
TPZH
VDD = 5V, VIN = VDD or GND
(Notes 2, 3)
9
+25
o
C
-
230
ns
10, 11
+125
o
C, -55
o
C
-
311
ns
Propagation Delay
3 - State Enable to Q
TPLZ
TPZL
VDD = 5V, VIN = VDD or GND
(Notes 2, 3)
9
+25
o
C
-
180
ns
10, 11
+125
o
C, -55
o
C
-
243
ns
Transition Time
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
(Notes 1, 2)
9
+25
o
C
-
200
ns
10, 11
+125
o
C, -55
o
C
-
270
ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
1. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
1
A
+125
o
C
-
30
A
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
A
+125
o
C
-
60
A
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
-
2
A
+125
o
C
-
120
A
Output Voltage
VOL
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25
o
C, +125
o
C,
-55
o
C
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125
o
C
0.36
-
mA
-55
o
C
0.64
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
+125
o
C
0.9
-
mA
-55
o
C
1.6
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1, 2
+125
o
C
2.4
-
mA
-55
o
C
4.2
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1, 2
+125
o
C
-
-0.36
mA
-55
o
C
-
-0.64
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1, 2
+125
o
C
-
-1.15
mA
-55
o
C
-
-2.0
mA
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
1, 2
+125
o
C
-
-0.9
mA
-55
o
C
-
-1.6
mA
Output Current (Source)
IOH15
VDD =15V, VOUT = 13.5V
1, 2
+125
o
C
-
-2.4
mA
-55
o
C
-
-4.2
mA
background image
7-879
Specifications CD4043BMS, CD4044BMS
Input Voltage Low
VIL
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V, VOL < 1V
1, 2
+25
o
C, +125
o
C,
-55
o
C
7
-
V
Propagation Delay
Set or Reset to Q
TPLH
TPHL
VDD = 10V
1, 2, 3
+25
o
C
-
140
ns
VDD = 15V
1, 2, 3
+25
o
C
-
100
ns
Propagation Delay
3 State Enable to Q
TPHZ
TPZH
VDD = 10V
1, 2, 4
+25
o
C
-
110
ns
VDD = 15V
1, 2, 4
+25
o
C
-
80
ns
Propagation Delay
3 State Enable to Q
TPLZ
TPZL
VDD = 10V
1, 2, 4
+25
o
C
-
100
ns
VDD = 15V
1, 2, 4
+25
o
C
-
70
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
+25
o
C
-
100
ns
VDD = 15V
1, 2, 3
+25
o
C
-
80
ns
Minimum Set or Reset
Pulse Width
TW
VDD = 5V
1, 2, 3
+25
o
C
-
160
ns
VDD = 10V
1, 2, 3
+25
o
C
-
80
ns
VDD = 15V
1, 2, 3
+25
o
C
-
40
ns
Input Capacitance
CIN
Any Input
1, 2
+25
o
C
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25
o
C
-
7.5
A
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-2.8
-0.2
V
N Threshold Voltage
Delta
VTN
VDD = 10V, ISS = -10
A
1, 4
+25
o
C
-
1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
0.2
2.8
V
P Threshold Voltage
Delta
VTP
VSS = 0V, IDD = 10
A
1, 4
+25
o
C
-
1
V
Functional
F
VDD = 18V, VIN = VDD or GND
1
+25
o
C
VOH >
VDD/2
VOL <
VDD/2
V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
-
1.35 x
+25
o
C
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
0.2
A
Output Current (Sink)
IOL5
20% x Pre-Test Reading
Output Current (Source)
IOH5A
20% x Pre-Test Reading
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
background image
7-880
Specifications CD4043BMS, CD4044BMS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
MIL-STD-883
METHOD
TEST
READ AND RECORD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION
OPEN
GROUND
VDD
9V
-0.5V
OSCILLATOR
50kHz
25kHz
PART NUMBER
CD4043BMS
Static Burn-In 1
Note 1
1, 2, 9, 10, 13
3 - 8, 11, 12, 14,
15
16
Static Burn-In 2
Note 1
1, 2, 9, 10, 13
8
3 - 7, 11, 12,
14 - 16
Dynamic Burn-
In Note 1
13
8
5, 16
1, 2, 9, 12
4, 6, 12, 14
3, 7, 11, 15
Irradiation
Note 2
1, 2, 9, 10, 13
8
3 - 7, 11, 12,
14 - 16
PART NUMBER
CD4044BMS
Static Burn-In 1
Note 1
1, 2, 9, 10, 13
3 - 8, 11, 12, 14,
15
16
Static Burn-In 2
Note 1
1, 2, 9, 10, 13
8
3 - 7, 11, 12,
14 - 16
Dynamic Burn-
In Note 1
2
8
5, 16
1, 9, 10, 13
4, 6, 12, 14
3, 7, 11, 15
Irradiation
Note 2
1, 2, 9, 10, 13
8
3 - 7, 11, 12,
14 - 16
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K
5%, VDD = 18V
0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V
0.5V