ChipFind - документация

Электронный компонент: DG211CJ

Скачать:  PDF   ZIP
1
File Number
3118.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999
DG211, DG212
SPST 4-Channel Analog Switches
The DG211 and DG212 are low cost, CMOS monolithic,
Quad SPST analog switches. These can be used in general
purpose switching applications for communications,
instrumentation, process control and computer peripheral
equipment. Both devices provide true bidirectional
performance in the ON condition and will block signals to
30V
P-P
in the OFF condition. The DG211 and DG212 differ
only in that the digital control logic is inverted, as shown in
the truth table.
Pinout
DG211, DG212
(PDIP, SOIC)
TOP VIEW
Features
Switches
15V Analog Signals
TTL Compatibility
Logic Inputs Accept Negative Voltages
r
ON
(Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Functional Block Diagrams
DG211
DG212
Ordering Information
PART NUMBER
TEMP.
RANGE (
o
C)
PACKAGE
PKG.
NO.
DG211CJ
0 to 70
16 Ld PDIP
E16.3
DG212CJ
0 to 70
16 Ld PDIP
E16.3
DG211CY
0 to 70
16 Ld SOIC
M16.15
DG212CY
0 to 70
16 Ld SOIC
M16.15
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
IN
1
D
1
S
1
V-
GND
S
4
IN
4
D
4
IN
2
S
2
V+ (SUB-
V
L
(+5V)
S
3
D
3
IN
3
D
2
STRATE)
-
TRUTH TABLE
LOGIC
DG211
DG212
0
ON
OFF
1
OFF
ON
Logic "0"
0.8V, Logic "1"
2.4V
IN
1
S
1
D
1
IN
2
S
2
D
2
IN
3
S
3
D
3
IN
4
S
4
D
4
IN
1
S
1
D
1
IN
2
S
2
D
2
IN
3
S
3
D
3
IN
4
S
4
D
4
SWITCHES SHOWN FOR LOGIC "1" INPUT
Data Sheet
June 1999
2
Schematic Diagram
DG211 (
1
/
4
AS SHOWN)
TTL IN
GND
+15V
+5V
V
L
-15V
-15V
V-
-15V
+15V
OUT
IN
DG211, DG212
3
Absolute Maximum Ratings
Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V
V
IN
to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V- to V+
V
L
to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 25V
V
S
or V
D
to V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to -36V
V
S
or V
D
to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 36V
V+ to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
V- to Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Current, any Terminal Except S or D . . . . . . . . . . . . . . . . . . . . 30mA
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . . . . 70mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
o
C to 70
o
C
Thermal Resistance (Typical, Note 1)
JA
(
o
C/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .150
o
C
Maximum Storage Temperature Range . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
V+ = +15V, V- = -15V, V
L
= +5V, GND, T
A
= 25
o
C
PARAMETER
TEST CONDITIONS
(NOTE 2)
MIN
(NOTE 3)
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
ON
See Figure 1
V
S
= 10V, R
L
= 1k
, C
L
= 35pF
-
460
-
ns
Turn-OFF Time,
t
OFF1
-
360
-
ns
t
OFF2
-
450
-
ns
OFF Isolation, OIRR (Note 5)
V
IN
= 5V, R
L
= 1k
, C
L
= 15pF, V
S
= 1V
RMS
,
f = 100kHz
-
70
-
dB
Crosstalk (Channel to Channel), CCRR
-
-90
-
dB
Source OFF Capacitance, C
S(OFF)
V
D
= V
S
= 0V, V
IN
= 5V, f = 1MHz
-
5
-
pF
Drain OFF Capacitance, C
D(OFF)
-
5
-
pF
Channel ON Capacitance, C
D(ON)
+ C
S(ON)
-
16
-
pF
DIGITAL INPUT CHARACTERISTICS
Input Current with Voltage High, I
IH
V
IN
= 2.4V
-1.0
-0.0004
-
A
V
IN
= 15V
-
0.003
1.0
A
Input Current with Voltage Low, I
IL
V
IN
= 0V
-1.0
-0.0004
-
A
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ANALOG
-15
-
15
V
Drain-Source ON Resistance, r
DS(ON)
V
D
=
10V, V
IN
= 2.4V (DG212)
I
S
= 1mA, V
IN
= 0.8V (DG211)
-
150
175
Source OFF Leakage Current, I
S(OFF)
V
IN
= 2.4V (DG211)
V
IN
= 0.8V (DG212)
V
S
= 14V, V
D
= -14V
-
0.01
5.0
nA
V
S
= -14V, V
D
= 14V
-5.0
-0.02
-
nA
Drain OFF Leakage Current, I
D(OFF)
V
S
= -14V, V
D
= 14V
-
0.01
5.0
nA
V
S
= 14V, V
D
= -14V
-5.0
-0.02
-
nA
Drain ON Leakage Current, I
D(ON)
(Note 4)
V
IN
= 0.8V (DG211)
V
IN
= 2.4V (DG212)
V
S
= V
D
= 14V
-
0.1
5.0
nA
V
S
= V
D
= -14V
-5.0
-0.15
-
nA
DG211, DG212
4
Test Circuits and Waveforms
Switch output waveform shown for V
S
= constant with logic
input waveform as shown. Note the V
S
may be + or - as per
switching time test circuit. V
O
is the steady state output with
switch on. Feedthrough via gate capacitance may result in
spikes at leading and trailing edge of output waveform.
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
V
IN
= 0V or 2.4V
-
0.1
10
A
Negative Supply Current, I-
-
0.1
10
A
Logic Supply Current, I
L
-
0.1
10
A
NOTES:
2. The algebraic convention whereby the most negative value is a minimum, and the most positive is a maximum, is used in this data sheet.
3. For design reference only, not 100% tested.
4. I
D(ON)
is leakage from driver into ON switch.
5.
.
Electrical Specifications
V+ = +15V, V- = -15V, V
L
= +5V, GND, T
A
= 25
o
C (Continued)
PARAMETER
TEST CONDITIONS
(NOTE 2)
MIN
(NOTE 3)
TYP
MAX
UNITS
OFF Isolation
20
V
S
V
D
--------
, V
S
log
Input to OFF switch, V
D
output
=
=
=
Logic shown for DG211. Invert for DG212.
FIGURE 1. SWITCHING TIME MEASUREMENT POINTS
FIGURE 2. SWITCHING TIME TEST CIRCUIT
50%
90%
0V
t
OFF2
LOGIC
INPUT (IN
1
)
SWITCH
OUTPUT (V
O
)
V
S
t
ON
t
r
< 20ns
t
f
< 20ns
90%
SWITCH
INPUT
10%
t
OFF1
V
O
S
1
IN
1
LOGIC
INPUT
GND
V
S
= 10V
R
L
1k
C
L
35pF
SWITCH
OUTPUT
15V
V+
-15V
V-
SWITCH
INPUT
(REPEAT TEST FOR
IN
2
, IN
3
AND IN
4
)
V
O
= V
S
R
L
R
L
+ r
DS(ON)
D
1
5V
V
L
DG211, DG212
5
Die Characteristics
DIE DIMENSIONS:
2159
m x 2235
m
METALLIZATION:
Type: Al
Thickness: 10k
1k
PASSIVATION:
Type: PSG/Nitride
PSG Thickness: 7k
1.4k
Nitride Thickness: 8k
1.2k
WORST CASE CURRENT DENSITY:
9.1 x 10
4
A/cm
2
Metallization Mask Layout
DG211, DG212
PIN 2
D1
PIN 3
S1
PIN 4
V-
PIN 5
GND
PIN 6
S4
PIN 7
D4
PIN 8
IN 4
PIN 9
IN 3
PIN 10
D3
PIN 11
S3
PIN 12
VL
PIN 13
V+ (SUBSTRATE)
PIN 14
S2
PIN 15
D2
PIN 16
IN 2
PIN 1
IN 1
DG211, DG212