8-12
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
HA2557/883
Wideband Four Quadrant Analog
Multiplier (Current Output)
Description
The HA-2557/883 is a monolithic, high speed, four quadrant,
analog multiplier constructed in Intersil' Dielectrically Iso-
lated High Frequency Process. The single-ended current
output of the HA-2557/883 has a 130MHz signal bandwidth
(R
L
= 50
). High bandwidth and low distortion make this part
an ideal component in video systems.
The suitability for precision video applications is demon-
strated further by low multiplication error (1.5%), low
feedthrough (-52dB), and differential inputs with low bias cur-
rents (8
A). The HA-2557/883 is also well suited for mixer
circuits as well as AGC applications for sonar, radar, and
medical imaging equipment.
The current output of the HA-2557/883 allows it to achieve
higher bandwidths than voltage output multipliers. Full scale out-
put current is trimmed to 1.6mA. An internal 2500
feedback
resistor is also provided to accurately convert the current, if
desired, to a full scale output voltage of
4V. The HA-2557/883 is
not limited to multiplication applications only; frequency doubling,
power detection, as well as many other configurations are also
possible.
Ordering Information
PART NUMBER
TEMPERATURE
RANGE
PACKAGE
HA1-2557/883
-55
o
C to +125
o
C
16 Lead CerDIP
Features
This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
Low Multiplication Error . . . . . . . . . . . . . . . . 1.5% (Typ)
Input Bias Currents . . . . . . . . . . . . . . . . . . . . . 8
A (Typ)
Signal Input Feedthrough at 5MHz. . . . . . . -52dB (Typ)
Wide Y Channel Bandwidth . . . . . . . . . . 130MHz (Typ)
Wide X Channel Bandwidth . . . . . . . . . . . 75MHz (Typ)
Rise Time (R
L
= 50
) . . . . . . . . . . . . . . . . . . . . 7ns (Typ)
Supply Current . . . . . . . . . . . . . . . . . . . . . . . 17mA (Max)
Applications
Military Avionics
Missile Guidance Systems
Medical Imaging Displays
Video Mixers
Sonar AGC Processors
Radar Signal Conditioning
Voltage Controlled Amplifier
Vector Generator
July 1994
Pinout
HA-2557/883
(CERDIP)
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
V
REF
V
YIO
B
V
YIO
A
V
XIO
A
REF
NC
V
XIO
B
NC
X
I
OUT
R
Z
GND
V
Y
+
V
Y
-
V-
V+
V
X
-
V
X
+
X
Y
Schematic
V
YIO
B
V
Y
+
V+
V
BIAS
R
Z
I
OUT
V
XIO
A
REF
GND
V
BIAS
V
X
+
Y
Y
-
V
X
-
V
XIO
B
V
YIO
A
V-
+
-
Spec Number
511064-883
File Number
3638
8-13
Specifications HA2557/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Output Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3mA
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . < 2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Storage Temperature Range . . . . . . . . . . . . . . -65
o
C
T
A
+150
o
C
Max Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Thermal Resistance
JA
JC
CerDIP Package . . . . . . . . . . . . . . . . . . . . 82
o
C/W
27
o
C/W
Maximum Package Power Dissipation at +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.22W
Package Power Dissipation Derating Factor above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (
V
S
)
. . . . . . . . . . . . . . . . . . . . . . . . . .
15V
Operating Temperature Range . . . . . . . . . . . . -55
o
C
T
A
+125
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V, R
Z
(Pin 10) not connected, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Multiplication Error
ME
V
Y
, V
X
=
4V
FS = 1.6mA
1
+25
o
C
-3
3
%FS
2, 3
+125
o
C, -55
o
C
-6
6
%FS
Linearity Error
LE
V
Y
, V
X
=
4V
1
+25
o
C
-0.25
0.25
%FS
R
Z
Accuracy
RZE
Nominal 2500
1
+25
o
C
-3
3
%
2, 3
+125
o
C, -55
o
C
-5
5
%
I
OUT
Offset
I
OO
V
X
, V
Y
= 0V
1
+25
o
C
-10
10
A
2, 3
+125
o
C, -55
o
C
-15
15
A
Input Offset Voltage (V
X
)
V
XIO
V
Y
=
4V
1
+25
o
C
-15
15
mV
2, 3
+125
o
C, -55
o
C
-25
25
mV
Input Bias Current (V
X
)
I
B
(V
X
)
V
X
= 0V, V
Y
= 4V
1
+25
o
C
-15
15
A
2, 3
+125
o
C, -55
o
C
-25
25
A
Input Offset Current (V
X
)
I
IO
(V
X
)
V
X
= 0V, V
Y
= 4V
1
+25
o
C
-2
2
A
2, 3
+125
o
C, -55
o
C
-3
3
A
Common Mode (V
X
)
Rejection Ratio
CMRR(V
X
)
V
X
CM =
10V
V
Y
= 4V
1
+25
o
C
65
-
dB
2, 3
+125
o
C, -55
o
C
65
-
dB
Power Supply (V
X
)
Rejection Ratio
+ PSRR(V
X
)
V+ = +12V to +17V
V
Y
= 4V
1
+25
o
C
65
-
dB
2, 3
+125
o
C, -55
o
C
65
-
dB
- PSRR(V
X
)
V- = -12V to -17V
V
Y
= 4V
1
+25
o
C
45
-
dB
2, 3
+125
o
C, -55
o
C
45
-
dB
Input Offset Voltage (V
Y
)
V
YIO
V
X
=
4V
1
+25
o
C
-15
15
mV
2, 3
+125
o
C, -55
o
C
-25
25
mV
Input Bias Current (V
Y
)
I
B
(V
Y
)
V
Y
= 0V, V
X
= 4V
1
+25
o
C
-15
15
A
2, 3
+125
o
C, -55
o
C
-25
25
A
Input Offset Current (V
Y
)
I
IO
(V
Y
)
V
Y
= 0V, V
X
= 4V
1
+25
o
C
-2
2
A
2, 3
+125
o
C, -55
o
C
-3
3
A
Common Mode (V
Y
)
Rejection Ratio
CMRR(V
Y
)
V
Y
CM = +9V, -10V
V
X
= 4V
1
+25
o
C
65
-
dB
2, 3
+125
o
C, -55
o
C
65
-
dB
Power Supply (V
Y
)
Rejection Ratio
+ PSRR(V
Y
)
V+ = +12V to +17V
V
X
= 4V
1
+25
o
C
65
-
dB
2, 3
+125
o
C, -55
o
C
65
-
dB
- PSRR(V
Y
)
V- = -12V to -17V
V
X
= 4V
1
+25
o
C
45
-
dB
2, 3
+125
o
C, -55
o
C
45
-
dB
Supply Current
I
CC
V
X
, V
Y
= 0V
1
+25
o
C
-
17
mA
2, 3
+125
o
C, -55
o
C
-
17
mA
Output Impedance
Z
OUT
V
OUT
=
10V
1
+25
o
C
1.0
-
M
Spec Number
511064-883
8-14
HA2557/883
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V, R
Z
(Pin 10) not connected, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
V
Y
, CHARACTERISTICS
Bandwidth
BW(V
Y
)
-3dB, V
X
= 4V,
V
Y
200mV
P-P
1
+25
o
C
90
-
MHz
AC Feedthrough
V
ISO
f
O
= 5MHz,
V
Y
= 200mV
P-P
V
X
= Nulled
1, 2
+25
o
C
-
-48
dB
Rise and Fall Time
T
R
, T
F
V
Y
= -4V to +4V Step
V
X
= 4V,
10% to 90% pts
1
+25
o
C
-
10
ns
Overshoot
+OS, -OS
V
Y
= -4V to +4V Step
V
X
= 4V
1
+25
o
C
-
10
%
Differential Input
Resistance
R
IN
(V
Y
)
V
Y
=
4V, V
X
= 0V
1
+25
o
C
650
-
k
V
X
CHARACTERISTICS
Bandwidth
BW(V
X
)
-3dB, V
Y
= 4V,
V
X
200mV
P-P
1
+25
o
C
60
-
MHz
AC Feedthrough
V
ISO
f
O
= 5MHz,
V
X
= 200mV
P-P
V
Y
= Nulled
1, 2
+25
o
C
-
-50
dB
Rise and Fall Time
T
R
, T
F
V
X
= -4V to +4V Step
V
Y
= 4V, 10% to 90% pts
1
+25
o
C
-
10
ns
Overshoot
+OS, -OS
V
X
= -4V to +4V Step
V
Y
= 4V
1
+25
o
C
-
15
%
Differential Input
Resistance
R
IN
(V
X
)
V
X
=
4V, V
Y
= 0V
1
+25
o
C
650
-
k
NOTE:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Offset voltage applied to minimize feedthrough signal.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
-
Final Electrical Test Parameters
1 (Note 1), 2, 3
Group A Test Requirements
1, 2, 3
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
511064-883
8-15
HA2557/883
Die Characteristics
DIE DIMENSIONS:
71mils x 100mils x 19mils
1mils
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
2k
GLASSIVATION:
Type: Nitride (Si
3
N
4
) over Silox (SiO
2
, 5% Phos)
Silox Thickness: 12k
2k
Nitride Thickness: 3.5k
1.5k
TRANSISTOR COUNT: 72
SUBSTRATE POTENTIAL: V-
WORST CASE CURRENT DENSITY:
0.47 x 10
5
A/cm2
Metallization Mask Layout
HA-2557/883
(1) GND
(2) V
REF
V
Y
+ (5)
V
Y
- (6)
V
-
(7)
I
OUT
(8)
R
Z
(10)
(15) V
XIO
B
(16) V
XIO
A
V
YIO
B (3)
V
YIO
A (4)
(11) V+
(12) V
X
-
(13) V
X
+
Spec Number
511064-883
8-16
HA2557/883
Test Circuits
Burn-In Circuit
HA-2557/883 CERAMIC DIP
FIGURE 1. AC AND TRANSIENT RESPONSE TEST CIRCUIT
V
Y
TRANSIENT RESPONSE
Vertical Scale: Top 5V/Div.
Bottom: 100mV/Div.
Horizontal Scale: 20ns/Div.
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
+15V
V
OUT
NC
NC
NC
-15V
50
NC
V
Y
+
V
X
+
REF
NC
NC
NC
NC
X
Y
X
NC
NC
V
Y
+
- 15.5V
I
OUT
+15.5 V
V
X
+
NC
NC
0.01
F
NC
NC
R
Z
NC
0.5V
0.5V
0.01
F
D2
D1
D1 = D2 = 1N4002 OR EQUIVALENT (PER BOARD)
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
REF
X
X
Y
Spec Number
511064-883
8-17
HA2557/883
F16.3
MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A)
16 LEAD DUAL-IN-LINE FRIT-SEAL CERAMIC PACKAGE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
-
0.200
-
5.08
-
b
0.014
0.026
0.36
0.66
2
b1
0.014
0.023
0.36
0.58
3
b2
0.045
0.065
1.14
1.65
-
b3
0.023
0.045
0.58
1.14
4
c
0.008
0.018
0.20
0.46
2
c1
0.008
0.015
0.20
0.38
3
D
-
0.840
-
21.34
5
E
0.220
0.310
5.59
7.87
5
e
0.100 BSC
2.54 BSC
-
eA
0.300 BSC
7.62 BSC
-
eA/2
0.150 BSC
3.81 BSC
-
L
0.125
0.200
3.18
5.08
-
Q
0.015
0.060
0.38
1.52
6
S1
0.005
-
0.13
-
7
S2
0.005
-
0.13
-
-
90
o
105
o
90
o
105
o
-
aaa
-
0.015
-
0.38
-
bbb
-
0.030
-
0.76
-
ccc
-
0.010
-
0.25
-
M
-
0.0015
-
0.038
2
N
16
16
8
Packaging
NOTES:
1. Index area: A notch or a pin one identification mark shall be locat-
ed adjacent to pin one and shall be located within the shaded
area shown. The manufacturer's identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b1.
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling Dimension: Inch.
11. Lead Finish: Type A.
12. Materials: Compliant to MIL-M38510.
bbb
C A - B
S
c
Q
L
A
SEATING
BASE
D
PLANE
PLANE
-D-
-A-
-C-
-B-
D
E
S1
b2
b
A
e
M
c1
b1
(c)
(b)
SECTION A-A
BASE
LEAD FINISH
METAL
e
A/2
A
M
S
S
e
A
ccc
C A - B
M
D
S
S
aaa
C A - B
M
D
S
S
Spec Number
511064-883
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
8-18
DESIGN INFORMATION
August 1999
Semiconductor
HA2557
Wideband Four Quadrant
Current Output Analog Multiplier
Typical Performance Curves
V
Y
BANDWIDTH
V
X
BANDWIDTH
HA2557 INTO HA2842 AS I TO V CONVERTER V
Y
FULLPOWER
BANDWIDTH
V
Y
TRANSIENT RESPONSE OF HA-2842 AS I TO V
CONVERTER
Top: V
Y
Input 0 to 4V Step
Bottom: HA-2842 0 to 4V Response
100M
10M
1M
-32
-37
-42
FREQUENCY (Hz)
GAIN (dB)
-3dB at 131MHz
I
OUT
INTO 50
V
Y
BANDWIDTH
V
Y
= 200MV
P-P
, V
X
= 4V
DC
100M
10M
1M
FREQUENCY (Hz)
-32
-37
-42
GAIN (DB)
-3dB AT 77MHz
I
OUT
INTO 50
V
X
BANDWIDTH
V
X
= 200mV
P-P
V
Y
= 4V
DC
100M
10M
1M
FREQUENCY (Hz)
100K
10K
1K
4
0
2
-2
-4
-6
GAIN (dB)
-3dB at 24.4MHz
INTERNAL R
X
AS FEEDBACK RESISTOR,
V
Y
= 3.5V
P-P
, V
X
= 4V
DC
PLUS 3pF COMPENSATION CAPACITOR
Spec Number
511064-883
DESIGN INFORMATION
(Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
8-19
HA2557
DRIVING HA5023 AS I TO V CONVERTER V
Y
BANDWIDTH
V
Y
TRANSIENT RESPONSE OF HA5023 AS I TO V CONVERTER
Top: V
Y
Input 0 to 4V Step
Bottom: HA5023 0 to 4V Response
DRIVING HA5023 AS I TO V CONVERTER V
X
BANDWIDTH
V
Y
TRANSIENT RESPONSE OF HA5023 AS I TO V CONVERTER
Top: V
X
Input 0 to 4V Step
Bottom: HA5023 0 to 4V Response
DRIVING HA5023 AS I TO V CONVERTER V
Y
FULLPOWER
BANDWIDTH
DRIVING HA5023 AS I TO V CONVERTER V
X
FULLPOWER
BANDWIDTH
Typical Performance Curves
100M
10M
1M
FREQUENCY (Hz)
4
2
0
-2
-4
GAIN (dB)
-3dB at 94MHz
OF SECOND STAGE (AMP 2) WITH 619
FEEDBACK RESISTOR
AND 220
GAIN RESISTOR IN PARALLEL WITH A 10pF
FIRST STAGE USING A 909
FEEDBACK RESISTOR, OUTPUT
PLUS 220
, V
Y
= 200mV
P-P
, V
X
= 4V
DC
100M
10M
1M
FREQUENCY (Hz)
4
2
0
-2
-4
GAIN (dB)
-3dB at 98MHz
OF SECOND STAGE (AMP 2) WITH 619
FEEDBACK RESISTOR
AND 220
GAIN RESISTOR IN PARALLEL WITH A
FIRST STAGE USING A 909
FEEDBACK RESISTOR, OUTPUT
10pF PLUS 220
, V
X
= 200mV
P-P
, V
Y
= 4V
DC
100M
10M
1M
FREQUENCY (Hz)
4
2
0
-2
-4
GAIN (dB)
-3dB at 80MHz
OF SECOND STAGE (AMP 2) WITH 619
FEEDBACK RESISTOR
AND 220
GAIN RESISTOR IN PARALLEL WITH A 10pF
FIRST STAGE USING A 909
FEEDBACK RESISTOR OUTPUT
PLUS 220
, V
Y
= 3.5V
P-P
, V
X
= 4V
DC
100M
10M
1M
FREQUENCY (Hz)
4
2
0
-2
-4
GAIN (dB)
-3dB at 80MHz
OF SECOND STAGE (AMP 2) WITH 619
FEEDBACK RESISTOR
AND 220
GAIN RESISTOR IN PARALLEL WITH A 10pF
FIRST STAGE USING A 909
FEEDBACK RESISTOR OUTPUT
PLUS 220
, V
X
= 3.5V
P-P
, V
Y
= 4V
DC
Spec Number
511064-883
DESIGN INFORMATION
(Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
8-20
HA2557
INPUT BIAS CURRENT
ABSOLUTE VALUE OFFSET VOLTAGE
SCALE FACTOR ERROR
INPUT VOLTAGE RANGE
INPUT COMMON MODE RANGE
Typical Performance Curves
-100
-50
0
50
100
150
4
5
6
7
8
9
10
11
12
13
14
TEMPERATURE (
o
C)
BIAS CURRENT (
A)
-100
-50
0
50
100
150
0
1
2
3
4
TEMPERATURE (
o
C)
OFFSET VOLTAGE (mV)
|V
IO
X|
|V
IO
Y|
5
6
7
-100
-50
0
50
100
150
-1
-0.5
0
0.5
1
1.5
2
TEMPERATURE (
o
C)
SCALE FACTOR ERROR (%)
4
6
8
10
12
14
16
1
2
3
4
5
6
SUPPLY VOLTAGE (V)
INPUT VOLTAGE RANGE (V)
X INPUT
Y INPUT
4
6
8
10
12
14
16
-15
-10
-5
0
5
10
15
SUPPLY VOLTAGE (V)
CMR (V)
Y INPUT
X INPUT
X AND Y INPUT
Spec Number
511064-883
DESIGN INFORMATION
(Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
8-21
HA2557
Applications Information
Operation at Reduced Supply Voltages
The HA-2557 will operate over a range of supply voltages,
5V to
15V. Use of supply voltages below
12V will reduce
input and output voltage ranges. See "Typical Performance
Curves" for more information.
Offset Adjustment
The channel offset voltage may be nulled by using a 20K poten-
tiometer between the V
YIO
or V
XIO
adjust pin A and B and con-
necting the wiper to V-. Reducing the channel offset voltage will
reduce AC feedthrough and improve the multiplication error.
Theory of Operation
The HA-2557 creates an output current that is the product of
the X and Y input voltages divided by a constant scale factor
of 10kV
. The resulting output has the correct polarity in
each of the four quadrants defined by the combinations of
positive and negative X and Y inputs. This results in the fol-
lowing equation, where X and Y are high impedance differ-
ential inputs:
To accomplish this the differential input voltages are first
converted into differential currents by the X and Y input
transconductance stages. The currents are then scaled by a
constant reference and combined in the multiplier core. The
multiplier core is a basic Gilbert Cell that produces a differ-
ential output current proportional to the product of X and Y
input signal currents. This current is converted into the out-
put for the HA-2557.
The purpose of the reference circuit is to provide a stable
current, used in setting the scale factor. This is achieved with
a bandgap reference circuit to produce a temperature stable
voltage of 1.2V which is forced across a NiCr resistor. Slight
adjustments to scale factor may be possible by overriding
the internal reference with the V
REF
pin. The scale factor is
used to maintain the output of the multiplier within the nor-
mal operating range of
1.6mA when full scale inputs are
applied.
Communications
The multiplier function of the HA-2557 has applications in
AM Signal Generation, Synchronous AM Detection and
Phase Detection. These circuit configurations are shown in
Figure 2, Figure 3 and Figure 4. By feeding a signal into both
X and Y inputs a Square function results that is useful as a
Frequency Doubler as shown in Figure 5. The HA-2557 is
particularly useful in applications that require the interaction
of high speed signals. Both inputs X and Y have similar wide
bandwidth and input characteristics. This is unlike earlier
I
OUT
X x Y
10kV
-------------
=
products where one input was dedicated to a slow moving
control function as is required for Automatic Gain Control.
The HA-2557 is versatile enough for both.
FIGURE 2. AM SIGNAL GENERATION
FIGURE 3. SYNCHRONOUS AM DETECTION
FIGURE 4. PHASE DETECTION
1/10kV
X
Y
V
X
+
V
X
-
V
Y
+
V
Y
-
X
I
OUT
ACOS(
)
CCOS(
C
)
CARRIER
AUDIO
I
OUT
AC
20kV
---------------
Cos
C
A
(
)
Cos
C
A
+
(
)
+
(
)
=
R
Z
+
-
+
-
1/10KV
X
Y
V
X
+
V
X
-
V
Y
+
V
Y
-
AM SIGNAL
CARRIER
LIKE THE FREQUENCY DOUBLER YOU GET
I
OUT
R
Z
+
-
+
-
X
AUDIO CENTERED AT DC AND 2F
C
.
1/10kV
X
Y
V
X
+
V
X
-
V
Y
+
V
Y
-
ACOS(
)
ACOS(
+
)
I
OUT
A2
20kV
---------------
Cos
( )
Cos 2
+
(
)
+
(
)
=
DC COMPONENT IS PROPORTIONAL TO COS(
)
I
OUT
R
Z
+
-
+
-
X
Spec Number
511064-883
DESIGN INFORMATION
(Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
8-22
HA2557
FIGURE 5. FREQUENCY DOUBLER
Although the X and Y inputs have similar AC characteristics,
they are not the same. The designer should consider input
parameters such as small signal bandwidth and ac
feedthrough to get the most performance from the HA-2557.
The Y channel is the faster of the two inputs with a small sig-
nal bandwidth of typically 130MHz verses 75MHz for the X
channel. Therefore in AM Signal Generation, the best perfor-
mance will be obtained with the Carrier applied to the Y
channel and the modulation signal (lower frequency) applied
to the X channel.
Operation Over a Wide Supply Range
The HA-2557 is able to operate over a wide supply voltage
range
5V to
17.5V. The
5V range is particularly useful in
video applications. At
5V the input voltage range is reduced
to
1.4V limiting the fullscale output current. Another current
output option is the HA-2556 voltage output multiplier config-
ured for current output with an output sensing resistor (Refer
to the HA-2556 datasheet).
Automatic Gain Control
Figure 6 shows the HA-2557 configured in an Automatic
Gain Control or AGC application. The HA-2842 serves as an
output I to V converter using R
Z
which is trimmed to provide
an accurate 4V Fullscale conversion. Refer to Voltage
Output Conversion for more details about this function. The
HA-5127 low noise amplifier provides the gain control signal
to the X input. This control signal sets the peak output volt-
age of the multiplier to match the preset reference level. The
feedback network around the HA-5127 provides a response
time adjustment. High frequency changes in the peak are
rejected as noise or the desired signal to be transmitted.
These signals do not indicate a change in the average peak
value and therefore no gain adjustment is needed. Lower
frequency changes in the peak value are given a gain of -1
for feedback to the control input. At DC the circuit is an inte-
grator automatically compensating for offset and other con-
stant error terms.
1/10KV
X
Y
I
OUT
V
X
+
V
X
-
V
Y
+
V
Y
-
ACOS(
)
ACos
( )
ACos
( )
(
)
10kV
I
OUT
(
)
=
I
OUT
A
2
20K
--------
1
Cos 2
(
)
+
(
)
=
R
Z
WHICH EVALUATES TO:
+
-
+
-
X
FIGURE 6. AUTOMATIC GAIN CONTROL
This multiplier has the advantage over other AGC circuits, in
that the signal bandwidth is not affected by the control signal
gain adjustment.
Voltage Output Conversion
The HA-2842 is an excellent choice to perform the output
current to voltage conversion as shown in Figure 7. The
combination of 400V/
s slew rate and 80MHz Gain Band-
width product will maintain signal dynamics while providing a
full scale
4V output. The HA-2842 also provides a hefty out-
put drive capability of 100mA.
This voltage feedback amplifier takes advantage of the inter-
nal R
Z
resistor, trimmed to provide an accurate 4V fullscale
conversion. The parasitic capacitance at the negative input
of the HA-2842 must be compensated with a 3pF capacitor
from pin 2 to pin 6. This compensation will also insure that
the amp will see a noise gain of 2 at its crossover frequency,
the minimum required for stability with this device. The full
power bandwidth curve and large signal pulse response for
this circuit are shown in Typical Performance Curves. The
fast slew rate of the HA-2842 results in a minimal reduction
of bandwidth for large signals.
5k
10k
HA-5127
0.01
F
10k
0.1
F
1N914
5.6V
0.1
F
+15V
20k
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
+15V
V
OUT
NC
NC
NC
-15V
NC
V
Y
V
X
REF
NC
NC
NC
X
0.01
1.0
3pF
I
OUT
1.0
0.01
2.5K
R
Z
+
-
HA-2842
+
-
Y
X
Spec Number
511064-883
DESIGN INFORMATION
(Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
8-23
HA2557
Another choice for an I to V converter that takes better
advantage of the wide bandwidth of the HA-2557, is to use
the HA5023 Dual 100MHz current feedback amp. The opti-
mum bandwidth of a current feedback amp is obtained with a
fixed feedback resistor. Therefore scaling the I to V conver-
sion to a convenient value requires two stages. Fortunately
the HA5023 provides two wideband amplifiers in a single 8
pin Mini-DIP or SOIC package, while their current feedback
architecture provides signal gain with minimal reduction in
bandwidth. This circuit configuration is shown in Figure 8.
The optimum bandwidth is achieved in stage 1 with a 909
feedback resistor. This voltage is then gained up by the sec-
ond stage to provide a
4V Fullscale Voltage output with a
bandwidth in excess of 90MHz. The 10pF capacitor and the
additional 220
resistor improve gain flatness and reduce
gain peaking. The HA5023 also provides excellent Full
Power Bandwidth (-3dB at 80MHz for a 3.5V
P-P
signal).
Refer to Typical Performance Curves for more information.
FIGURE 7. VOLTAGE OUTPUT CONVERSION
FIGURE 8. VOLTAGE OUTPUT CONVERSION
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
+15V
V
OUT
NC
NC
NC
-15V
NC
V
Y
V
X
REF
NC
NC
NC
X
0.01
1.0
+15V -15V
HA-2842
3pF
I
OUT
1.0
0.01
0.01
1.0
0.01
1.0
2.5K
2
3
6
R
Z
+
-
Y
X
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
+15V
V
OUT
NC
NC
NC
-15V
NC
V
Y
V
X
REF
NC
NC
NC
X
0.01
1.0
+15V -15V
1 of 2
I
OUT
1.0
0.01
0.01
1.0
0.01
1.0
2.5K
2
3
1
NC
4
8
909
619
5
6
8
2 of 2
HA5023
220
220
10pF
HA5023
(1/2)
(1/2)
R
Z
+
-
+
-
Y
X
Spec Number
511064-883
DESIGN INFORMATION
(Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
8-24
HA2557
TYPICAL PERFORMANCE CHARACTERISTICS
Device Tested at V
SUPPLY
= 15V, R
Z
(Pin 10) Not Connected, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
TEMPERATURE
TYPICAL
UNITS
Multiplication Error
ME
V
Y
, V
X
=
4V
+25
o
C
1.5
%FS
+125
o
C, -55
o
C
3.0
%FS
Multiplication Error Drift
METC
V
Y
, V
X
=
4V
+125
o
C, -55
o
C
0.003
%FS/
o
C
Linearity Error
LE3V
V
Y
, V
X
=
3V
+25
o
C
0.02
%FS
LE4V
V
Y
, V
X
=
4V
+25
o
C
0.05
%FS
Scale Factor
SF
+25
o
C
10
kV
Voltage Noise
E
N
(1kHz)
f = 1kHz, V
X
= 0V, V
Y
= 0V
+25
o
C
150
nV/
Hz
E
N
(100kHz)
f = 100kHz, V
X
= 0V, V
Y
= 0V
+25
o
C
40
nV/
Hz
Positive Power Supply
Rejection Ratio
+PSRR
V
S
+ = +12V to +15V,
V
S
- = -15V
+25
o
C
80
dB
+125
o
C, -55
o
C
80
dB
Negative Power Supply
Rejection Ratio
-PSRR
V
S
- = -12V to -15V,
V
S
+ = +15V
+25
o
C
55
dB
+125
o
C, -55
o
C
55
dB
Supply Current
I
CC
V
X
, V
Y
= 0V
+25
o
C
13
mA
+125
o
C, -55
o
C
13
mA
INPUT CHARACTERISTICS
Input Offset Voltage
V
IO
V
Y
=
4V
+25
o
C
4
mV
+125
o
C, -55
o
C
8
mV
Input Offset Voltage Drift
V
IO
TC
V
Y
=
4V
+125
o
C, -55
o
C
35
V/
o
C
Input Bias Current
I
B
V
X
= 0V, V
Y
= 4V
+25
o
C
8
A
+125
o
C, -55
o
C
12
A
Input Offset Current
I
IO
V
X
= 0V, V
Y
= 4V
+25
o
C
0.5
A
+125
o
C, -55
o
C
1.0
A
Differential Input Range
+25
o
C
4
V
Spec Number
511064-883
DESIGN INFORMATION
(Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as
application and design information only. No guarantee is implied.
8-25
HA2557
V
Y
CHARACTERISTICS
Bandwidth
BW(V
Y
)
-3dB, V
X
= 4V, V
Y
200mV
P-P
+25
o
C
130
MHz
AC Feedthrough
V
ISO
(5MHz)
f
O
= 5MHz, V
Y
= 200mV
P-P
V
X
= Nulled (Note 1)
+25
o
C
-52
dB
Rise and Fall Time
T
R
, T
F
V
Y
= -4V to +4V Step, V
X
= 4V,
10% to 90% pts
+25
o
C
7
ns
Differential Input
Resistance
R
IN
(V
Y
)
V
Y
=
4V, V
X
= 0V
+25
o
C
1
M
V
X
CHARACTERISTICS
Bandwidth
BW(V
X
)
-3dB, V
Y
= 4V,
V
X
200mV
P-P
+25
o
C
75
MHz
AC Feedthrough
V
ISO
(5MHz)
f
O
= 5MHz,
V
X
= 200mV
P-P
V
Y
= nulled (Note 1)
+25
o
C
-54
dB
Rise and Fall Time
T
R
, T
F
V
X
= -4V to +4V step, V
Y
= 4V,
10% to 90% pts
+25
o
C
7
ns
Differential Input
Resistance
R
IN
(V
X
)
V
X
=
4V, V
Y
= 0V
+25
o
C
1
M
OUTPUT CHARACTERISTICS
Output Offset Current
I
OO
V
X
, V
Y
= 0V
+25
o
C
2.4
A
+125
o
C, -55
o
C
5.6
A
Full Scale Output Current
I
OUT
FS
V
X
, V
Y
=
4V
+25
o
C
1.6
mA
Output Resistance
Z
OUT
V
OUT
=
10V
+25
o
C
1.5
M
Output Capacitance
C
OUT
+25
o
C
6.5
pF
NOTE:
1. Offset voltage applied to minimize feedthrough signal.
TYPICAL PERFORMANCE CHARACTERISTICS
Device Tested at V
SUPPLY
= 15V, R
Z
(Pin 10) Not Connected, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
TEMPERATURE
TYPICAL
UNITS
Spec Number
511064-883
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
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