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Электронный компонент: HA2-5127/883

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright Intersil Americas Inc. 2001
HA-5127/883
Ultra Low Noise, Precision Operational Amplifier
August 2001
Spec Number
511008-883
File Number
3751.1
Description
The HA-5127/883 monolithic operational amplifier features
an excellent combination of precision DC and wideband high
speed characteristics. Utilizing the Intersil D.I. technology
and advanced processing techniques, this unique design
unites low noise precision instrumentation performance with
high speed, wideband capability.
This amplifier's impressive list of features include low V
OS
,
wide gain-bandwidth, high open loop gain, and high CMRR.
Additionally, this flexible device operates over a wide supply
range while consuming only 120mW of power.
Using the HA-5127/883 allows designers to minimize errors
while maximizing speed and bandwidth.
This device is ideally suited for low level transducer signal
amplifier circuits. Other applications which can utilize the
HA-5127/883's qualities include instrumentation amplifiers,
pulse or RF amplifiers, audio preamplifiers, and signal condi-
tioning circuits.
Ordering Information
PART
NUMBER
TEMPERATURE
RANGE
PACKAGE
HA2-5127/883
-55
o
C to +125
o
C
8 Pin Can
Features
This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
High Slew Rate . . . . . . . . . . . . . . . . . . . . . . . .7V/
s (Min)
Unity Gain Bandwidth . . . . . . . . . . . . . . . . . .5MHz (Min)
Low Noise Voltage (at 1kHz) . . . . . . . . 4.5nV/
Hz (Max)
Low Offset Voltage. . . . . . . . . . . . . . . . . . . .100
V (Max)
Low Offset Drift With Temperature. . . . 1.8
V/
o
C (Max)
High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . 100dB (Min)
High Voltage Gain . . . . . . . . . . . . . . . . . . 700kV/V (Min)
Applications
High Speed Signal Conditioners
Wide Bandwidth Instrumentation Amplifiers
Low Level Transducer Amplifiers
Fast, Low Level Voltage Comparators
Highest Quality Audio Preamplifiers
Pulse/RF Amplifiers
Pinout
HA-5127/883
(METAL CAN)
TOP VIEW
2
4
6
1
3
7
5
8
OUT
V- (CASE)
BAL
V+
+
BAL
-IN
+IN
NC
-
2
Specifications HA-5127/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 44V
Differential Input Voltage (Note 2) . . . . . . . . . . . . . . . . . . . . . . . 0.7V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Input Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Differential Output Current . . . . . . . . . . .Full Short Circuit Protection
Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Resistance
JA
JC
Metal Can Package . . . . . . . . . . . . . . . . .
155
o
C/W
67
o
C/W
Package Power Dissipation Limit at +75
o
C for T
J
+175
o
C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW
Package Power Dissipation Derating Factor Above +75
o
C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Recommended Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15V
V
INCM
1/2 (V+ - V-)
R
L
600
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 5
0
, R
LOAD
= 100k
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Offset Voltage
V
IO
V
CM
= 0V
1
+25
o
C
-100
100
V
2, 3
+125
o
C, -55
o
C
-300
300
V
Input Bias Current
I
B
V
CM
= 0V,
R
S
= 10k
, 5
0
1
+25
o
C
-
80
nA
2, 3
+125
o
C, -55
o
C
-
150
nA
Input Offset Current
I
IO
V
CM
= 0V,
+R
S
= 10k
,
-R
S
= 10k
1
+25
o
C
-75
75
nA
2, 3
+125
o
C, -55
o
C
-135
135
nA
Common Mode
Range
+CMR
V+ = +4.7V,
V- = -25.3V
1
+25
o
C
10.3
-
V
2, 3
+125
o
C, -55
o
C
10.3
-
V
-CMR
V+ = +25.3V,
V- = -4.7V
1
+25
o
C
-
-10.3
V
2, 3
+125
o
C, -55
o
C
-
-10.3
V
Large Signal Voltage
Gain
+A
VOL
V
OUT
= 0V and +10V,
R
L
= 2k
4
+25
o
C
700
-
kV/V
5, 6
+125
o
C, -55
o
C
300
-
kV/V
-A
VOL
V
OUT
= 0V and -10V,
R
L
= 2k
4
+25
o
C
700
-
kV/V
5, 6
+125
o
C, -55
o
C
300
-
kV/V
Common Mode
Rejection Ratio
+CMRR
V
CM
= +11V
1
+25
o
C
100
-
dB
V
CM
= +10V
2, 3
+125
o
C, -55
o
C
100
-
dB
-CMRR
V
CM
= -11V
1
+25
o
C
100
-
dB
V
CM
= -10V
2, 3
+125
o
C, -55
o
C
100
-
dB
Output Voltage
Swing
+V
OUT1
R
L
= 2k
4
+25
o
C
11.5
-
V
5, 6
+125
o
C, -55
o
C
11.5
-
V
-V
OUT1
R
L
= 2k
4
+25
o
C
-
-11.5
V
5, 6
+125
o
C, -55
o
C
-
-11.5
V
+V
OUT2
R
L
= 600
4
+25
o
C
10
-
V
-V
OUT2
R
L
= 600
4
+25
o
C
-
-10
V
+I
B
+ -I
B
2
------------------
Spec Number
511008-883
3
Specifications HA-5127/883
Output Current
+I
OUT
V
OUT
= -10V
4
+25
o
C
16.5
-
mA
-I
OUT
V
OUT
= +10V
4
+25
o
C
-
-16.5
mA
Quiescent Power
Supply Current
+I
CC
V
OUT
= 0V, I
OUT
=
0mA
1
+25
o
C
-
4
mA
2, 3
+125
o
C, -55
o
C
-
4
mA
-I
CC
V
OUT
= 0V, I
OUT
=
0mA
1
+25
o
C
-4
-
mA
2, 3
+125
o
C, -55
o
C
-4
-
mA
Power Supply
Rejection Ratio
+PSRR
V
SUP
= 14V
1
+25
o
C
86
-
dB
V
SUP
= 13.5V
2, 3
+125
o
C, -55
o
C
86
-
dB
-PSRR
V
SUP
= 14V
1
+25
o
C
86
-
dB
V
SUP
= 13.5V
2, 3
+125
o
C, -55
o
C
86
-
dB
Offset Voltage
Adjustment
+V
IO
Adj
Note 1
1
+25
o
C
V
IO
-1
-
mV
2, 3
+125
o
C, -55
o
C
V
IO
-1
-
mV
-V
IO
Adj
Note 1
1
+25
o
C
V
IO
+1
-
mV
2, 3
+125
o
C, -55
o
C
V
IO
+1
-
mV
NOTE:
1. Offset adjustment range is [V
IO
(Measured)
1mV] minimum referred to output. This test is for functionality only to assure adjustment
through 0V.
2. For differential input voltages greater than 0.7V, the input current must be limited to 25mA to protect the back-to-back input diodes.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 50
, R
LOAD
= 2k
, C
LOAD
= 50pF, A
VCL
= +1V/V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUP
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Slew Rate
+SR
V
OUT
= -3V to +3V
7
+25
o
C
7
-
V/
s
-SR
V
OUT
= +3V to -3V
7
+25
o
C
7
-
V/
s
Rise and Fall Time
t
R
V
OUT
= 0 to +200mV
10%
T
R
90%
7
+25
o
C
-
150
ns
t
F
V
OUT
= 0 to -200mV
10%
T
F
90%
7
+25
o
C
-
150
ns
Overshoot
+OS
V
OUT
= 0 to +200mV
7
+25
o
C
-
40
%
-OS
V
OUT
= 0 to -200mV
7
+25
o
C
-
40
%
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
15V, R
LOAD
= 2k
, C
LOAD
= 50pF, A
V
= +1V/V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
MIN
MAX
UNITS
Average Offset Voltage Drift
V
IO
TC
V
CM
= 0V
1
-55
o
C to +125
o
C
-
1.8
V/
o
C
Differential Input Resistance
R
IN
V
CM
= 0V
1
+25
o
C
0.8
-
M
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
15V, R
SOURCE
= 5
0
, R
LOAD
= 100k
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
511008-883
4
Specifications HA-5127/883
Low Frequency Peak-to-Peak
Noise
E
NP-P
0.1Hz to 10Hz
1
+25
o
C
-
0.25
V
P-P
Input Noise Voltage Density
E
N
R
S
= 20
, f
O
= 10Hz
1
+25
o
C
-
10.0
nV/
Hz
R
S
= 20
, f
O
= 100Hz
1
+25
o
C
-
5.6
nV/
Hz
R
S
= 20
, f
O
= 1kHz
1
+25
o
C
-
4.5
nV/
Hz
Input Noise Current Density
I
N
R
S
= 2M
, f
O
= 10Hz
1
+25
o
C
-
4.0
pA/
Hz
R
S
= 2M
, f
O
= 100Hz
1
+25
o
C
-
2.3
pA/
Hz
R
S
= 2M
, f
O
= 1kHz
1
+25
o
C
-
0.6
pA/
Hz
Unity Gain Bandwidth
UGBW
V
O
= 100mV
1
+25
o
C
5
-
MHz
Full Power Bandwidth
FPBW
V
PEAK
= 10V
1, 2
+25
o
C
111
-
kHz
Minimum Closed Loop Stable
Gain
CLSG
R
L
= 2k
, C
L
= 50pF
1
-55
o
C to +125
o
C
1
-
V/V
Settling Time
t
S
To 0.1% for a 10V Step
1
+25
o
C
-
2
s
Output Resistance
R
OUT
Open Loop
1
+25
o
C
-
100
Quiescent Power
Consumption
PC
V
OUT
= 0V, I
OUT
= 0mA
1, 3
-55
o
C to +125
o
C
-
120
mW
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2
V
PEAK
).
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on output.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLES 1 AND 2) (NOTE 2)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6, 7
Group A Test Requirements
1, 2, 3, 4, 5, 6, 7
Groups C and D Endpoints
1
NOTES:
1. PDA applies to Subgroup 1 only.
2. The Subgroup assignments of the parameters in these tables were patterned after Mil-M-38510/135, with the exception of V
IO
, which
is Subgroups 1, 2, 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
15V, R
LOAD
= 2k
, C
LOAD
= 50pF, A
V
= +1V/V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
MIN
MAX
UNITS
Spec Number
511008-883
5
HA-5127/883
Die Characteristics
DIE DIMENSIONS:
104 x 65 x 19 mils
1 mils
2650 x 1650 x 483
m
25.4
m
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
2k
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12k
2k
Nitride Thickness: 3.5k
1.5k
WORST CASE CURRENT DENSITY:
3.6 x 10
5
A/cm
2
This device meets Glassivation Integrity Test Requirement
per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph 30.5.5.4.
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 63
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5127/883
BAL
BAL
V+
OUT
NC
V-
+IN
-IN
Spec Number
511008-883