220

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Ordering Information

PART NUMBER

TEMPERATURE RANGE

SCREENING LEVEL

PACKAGE

HCS163DMSR

-55

C to +125

Intersil Class S Equivalent

16 Lead SBDIP

HCS163KMSR

-55

C to +125

Intersil Class S Equivalent

16 Lead Ceramic Flatpack

HCS163D/Sample

+25

Sample

16 Lead SBDIP

HCS163K/Sample

+25

Sample

16 Lead Ceramic Flatpack

HCS163HMSR

+25

Die

HCS163MS

Radiation Hardened

Synchronous Presettable Counter

Pinouts

16 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T16, LEAD FINISH C

TOP VIEW

16 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP4-F16, LEAD FINISH C

TOP VIEW

GND

VCC

SPE

GND

VCC

SPE

Features

· 3 Micron Radiation Hardened CMOS SOS

· Total Dose 200K RAD (Si)

· SEP Effective LET No Upsets: >100 MEV-cm

/mg

· Single Event Upset (SEU) Immunity < 2 x 10

-9

Errors/Bit-Day

(Typ)

· Dose Rate Survivability: >1 x 10

RAD (Si)/s

· Dose Rate Upset: >10

RAD (Si)/s 20ns Pulse

· Latch-Up Free Under Any Conditions

· Military Temperature Range: -55

C to +125

· Significant Power Reduction Compared to LSTTL ICs

· DC Operating Voltage Range: 4.5V to 5.5V

· Input Logic Levels

- VIL = 30% of VCC

- VIH = 70% of VCC

· Input Current Levels Ii

A at VOL, VOH

Description

The Intersil HCS163MS is a Radiation Hardened synchronous
presettable binary counter that features lookahead carry logic for
use in high speed counting applications. Counting and parallel
load, and presetting are all accomplished synchronously with the
positive transition of the clock.

The HCS163MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS163MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).

September 1995

Spec Number

518835

File Number

3087.1

DB NA

221

HCS163MS

Functional Block Diagram

TRUTH TABLE

OPERATING MODE

INPUTS

OUTPUTS

SPE

Reset (clear)

Parallel Load

h (Note 3)

(Note 1)

Count

h (Note 3)

Count

(Note 1)

Inhibit

h (Note 3)

l (Note 2)

h (Note 3)

(Note 1)

h (Note 3)

l (Note 2)

h (Note 3)

H = HIGH Voltage Level

L = LOW Voltage Level

h = HIGH voltage level one setup time prior to the LOW-to-HIGH clock transition

l = LOW voltage level one setup time prior to the LOW-to-HIGH clock transition

X = Immaterial

q = Lower case letter indicate the state of the referenced output prior to the LOW-to-HIGH clock transition

= LOW-to-HIGH clock transition

NOTES:

1. The TC output is HIGH when TE is HIGH and the counter is at terminal count (HLLH for 162 and HHHH for 163)

2. The HIGH-to-LOW transition of PE or TE on the 54/74163 and 54/74160 should only occur while CP is high for conventional operation

3. The LOW-to-HIGH transition of SPE or MR on the 54/74163 should only occur while CP is high for conventional operation

SPE

Q0 Q1

Q2 Q3

VCC

Spec Number

518835

222

Specifications HCS163MS

Absolute Maximum Ratings

Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input

. . . . . . . . . . . . . . . . . . . . . . . .±

10mA

DC Drain Current, Any One Output

. . . . . . . . . . . . . . . . . . . . . . .±

25mA

(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65

C to +150

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

Thermal Resistance

SBDIP Package. . . . . . . . . . . . . . . . . . . .

C/W

Ceramic Flatpack Package . . . . . . . . . . .

114

C/W

Maximum Package Power Dissipation at +125

C Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/

CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5 VCC (TR, TF) . . . . . . . .100ns Max
Operating Temperature Range (T

) . . . . . . . . . . . . -55

C to +125

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

(NOTE 1)

CONDITIONS

GROUP

A SUB-

GROUPS

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Supply Current

ICC

VCC = 5.5V,
VIN = VCC or GND

+25

2, 3

+125

C, -55

750

Output Current
(Sink)

IOL

VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V ,
(Note 2)

+25

4.8

2, 3

+125

C, -55

4.0

Output Current
(Source)

IOH

VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V, (Note 2)

+25

-4.8

2, 3

+125

C, -55

-4.0

Output Voltage Low

VOL

VCC = 4.5V, VIH = 3.15V,
IOL = 50

A, VIL = 1.35V

1, 2, 3

+25

C, +125

C, -55

0.1

VCC = 5.5V, VIH = 3.85V,
IOL = 50

A, VIL = 1.65V

1, 2, 3

+25

C, +125

C, -55

0.1

Output Voltage High

VOH

VCC = 4.5V, VIH = 3.15V,
IOH = -50

A, VIL = 1.35V

1, 2, 3

+25

C, +125

C, -55

VCC

-0.1

VCC = 5.5V, VIH = 3.85V,
IOH = -50

A, VIL = 1.65V

1, 2, 3

+25

C, +125

C, -55

VCC

-0.1

Input Leakage
Current

IIN

VCC = 5.5V, VIN = VCC or
GND

+25

0.5

2, 3

+125

C, -55

5.0

Noise Immunity
Functional Test

VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 3)

7, 8A, 8B

+25

C, +125

C, -55

NOTES:

1. All voltages referenced to device GND.

2. Force/Measure functions may be interchanged.

3. For functional tests, VO

4.0V is recognized as a logic "1", and VO

0.5V is recognized as a logic "0".

Spec Number

518835

223

Specifications HCS163MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

(NOTES 1, 2)

CONDITIONS

GROUP

A SUB-

GROUPS

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Propagation Delay
CP to Qn

TPHL,

TPLH

VCC = 4.5V

+25

10, 11

+125

C, -55

Propagation Delay
CP to TC

TPHL,

TPLH

VCC = 4.5V

+25

10, 11

+125

C, -55

Propagation Delay
TE to TC

TPHL,

TPLH

VCC = 4.5V

+25

10, 11

+125

C, -55

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500

, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER

SYMBOL

(NOTE 1)

CONDITIONS

TEMPERATURE

LIMITS

UNITS

MIN

MAX

Capacitance Power Dissipation

CPD

VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz

+25

+125

C, -55

Input Capacitance

CIN

VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz

+25

+125

C, -55

Pulse Width Time CP(L)