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Электронный компонент: HCS190MS

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260
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS190DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead SBDIP
HCS190KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
HCS190D/Sample
+25
o
C
Sample
16 Lead SBDIP
HCS190K/Sample
+25
o
C
Sample
16 Lead Ceramic Flatpack
HCS190HMSR
+25
o
C
Die
Die
HCS190MS
Radiation Hardened Synchronous
4-Bit Up/Down Counter
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
TRUTH TABLE
INPUTS
OUTPUT
FUNCTION
PL
CE
U/D
CP
H
L
L
Count Up
H
L
H
Count Down
L
X
X
X
Preset
H
H
X
X
No Change
H = High Voltage Level
L = Low Voltage Level
X = Immaterial
=Positive Transistion
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Q1
Q0
CE
U/D
Q2
GND
Q3
CP
RC
TC
PL
P2
P0
P1
VCC
P3
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
Q1
Q0
CE
U/D
Q2
GND
Q3
P1
CP
RC
TC
PL
P2
P0
VCC
P3
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS190MS is an asynchronously presettable BCD
Decade synchronous counter. Presetting the counter to the
number on the preset data inputs (P0 - P3) is accomplished by a
low on the parallel load input (PL). Counting occurs when (PL) is
high, Count Enable (CE) is low and the Up/Down (U/D) input is
either low for up-counting or high for down-counting. The counter
is incremented or decremented synchronously with the low-to-high
transition of the clock.
When an overflow or underflow of the counter occurs, the Terminal
Count output (TC), which is low during counting, goes high and
remains high for one clock cycle. This output can be used for look-
ahead carry in high speed cascading. The TC output also initiates
the Ripple Clock output (RC) which, normally high, goes low and
remains low for the low-level portion of the clock pulse. These
counter can be cascaded using the Ripple Carry output.
If the decade counter is preset to an illegal state or assumes an
illegal state when power is applied, it will return to the normal
sequence in one or two counts.
The HCS190MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS190MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
September 1995
Spec Number
518836
File Number
2251.2
261
Specifications HCS190MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltage Reference to the VSS Terminal)
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
114
o
C/W
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Gates
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . 100ns/V Max.
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50
A
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 3.15V,
VIL = 1.35V, (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
V
NOTES:
1. All voltages reference to device GND.
2. Force/Measure functions may be interchanged.
3. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518836
262
Specifications HCS190MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
30
ns
PL to Qn
10, 11
+125
o
C, -55
o
C
2
35
ns
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
35
ns
10, 11
+125
o
C, -55
o
C
2
41
ns
Pn to Qn
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
33
ns
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
33
ns
10, 11
+125
o
C, -55
o
C
2
38
ns
CP to Qn
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
31
ns
10, 11
+125
o
C, -55
o
C
2
37
ns
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
34
ns
CP to RC
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
28
ns
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
24
ns
10, 11
+125
o
C, -55
o
C
2
26
ns
CP to TC
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
41
ns
10, 11
+125
o
C, -55
o
C
2
49
ns
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
40
ns
10, 11
+125
o
C, -55
o
C
2
47
ns
U/D to RC
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
37
ns
10, 11
+125
o
C, -55
o
C
2
40
ns
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
34
ns
10, 11
+125
o
C, -55
o
C
2
40
ns
U/D to TC
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
40
ns
10, 11
+125
o
C, -55
o
C
2
43
ns
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
40
ns
10, 11
+125
o
C, -55
o
C
2
36
ns
CE to RC
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
24
ns
10, 11
+125
o
C, -55
o
C
2
25
ns
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
26
ns
10, 11
+125
o
C, -55
o
C
2
26
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns.
Spec Number
518836
263
Specifications HCS190MS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
36
pF
1
+125
o
C, -55
o
C
-
62
pF
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C, -55
o
C
-
10
pF
Setup Time
TSU
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
12
-
ns
Pn to PL
1
+125
o
C, -55
o
C
18
-
ns
TSU
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
12
-
ns
CE to CP
1
+125
o
C, -55
o
C
18
-
ns
TSU
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
18
-
ns
U/D to CP
1
+125
o
C, -55
o
C
27
-
ns
Hold Time
TH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
2
-
ns
Pn to PL
1
+125
o
C, -55
o
C
2
-
ns
TH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
2
-
ns
CE to CP
1
+125
o
C, -55
o
C
2
-
ns
TH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
0
-
ns
U/D to CP
1
+125
o
C, -55
o
C
0
-
ns
Pulse Width Time
TW
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
16
-
ns
CP
1
+125
o
C, -55
o
C
24
-
ns
TW
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
20
-
ns
PL
1
+125
o
C, -55
o
C
30
-
ns
Recovery Time
TREC
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
12
-
ns
1
+125
o
C, -55
o
C
18
-
ns
Maximum
Frequency
FMAX
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
30
-
ns
1
+125
o
C, -55
o
C
20
-
ns
Output Transition
Time
TTHL
TTLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
+25
o
C
1
15
ns
1
+125
o
C, -55
o
C
1
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC -0.4V, VIL = 0
+25
o
C
-4.0
-
mA
Output Current (Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V, VIL = 0
+25
o
C
4.0
-
mA
Spec Number
518836
264
Specifications HCS190MS
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50
A
+25
o
C
VCC
-0.1
-
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50
A
+25
o
C
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50
A
+25
o
C
-
0.1
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
(Note 2)
+25
o
C
-
-
V
Propagation Delay
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
35
ns
PL to Qn
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
41
ns
Pn to Qn
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
33
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
38
ns
CP to Qn
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
37
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
34
ns
CP to RC
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
28
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
26
ns
CP to TC
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
49
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
47
ns
U/D to RC
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
40
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
40
ns
U/D to TC
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
43
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
36
ns
CE to RC
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
25
ns
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
26
ns
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Spec Number
518836