7-475
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
HCS245MS
Radiation Hardened
Octal Bus Transceiver, Three-State, Non-Inverting
Pinouts
20 PIN CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C
TOP VIEW
20 PIN CERAMIC FLAT PACK
MIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH C
TOP VIEW
11
12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
DIR
A0
A1
A2
A3
A4
A6
A5
A7
GND
VCC
B0
B1
B2
OE
B3
B4
B5
B6
B7
2
3
4
5
6
7
8
1
20
19
18
17
16
15
14
13
9
10
12
11
DIR
A0
A1
A2
A3
A4
A6
A5
A7
GND
VCC
B0
B1
B2
OE
B3
B4
B5
B6
B7
Features
3 Micron Radiation Hardened CMOS SOS
Total Dose 200K or 1 Mega-RAD(Si)
Latch-Up Free Under Any Conditions
Fanout (Over Temperature Range)
- Bus Driver Outputs - 15 LSTTL Loads
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS245MS is a Radiation Hardened Non-Invert-
ing Octal Bidirectional Bus Transceiver, Three-State,
intended for two-way asynchronous communication between
data busses. The HCS245MS allows data transmission from
the A bus to the B bus or from the B bus to the A bus. The
logic level at the direction input (DIR) determines the data
direction. The output enable input (OE) puts the I/O port in
the high-impedance state when high.
The HCS245MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS245MS is supplied in a 20 lead Weld Seal Ceramic
flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line
Package (D suffix).
File Number
2468.1
December 1992
Functional Diagram
ONE OF 8 TRANSCEIVERS
B DATA
(18, 17, 16, 15,
14, 13, 12)
DIR
OUTPUT
ENABLE
1
11
19
A DATA
9
(2, 3, 4, 5,
6, 7, 8)
TO OTHER
7 BUFFERS
Truth Table
CONTROL
INPUTS
OPERATION
OE
DIR
L
L
B Data to A Bus
L
H
A Data to B Bus
H
X
Isolation
H = High Voltage Level, L = Low Voltage Level,
X = Immaterial
To prevent excess currents in the High-Z (Isolation)
modes, all I/O terminals should be terminated with 10k
to 1M
resistors.
7-476
Specifications HCS245MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Impedance . . . . . . . . . . . . . . . .
ja
jc
Weld Seal DIC . . . . . . . . . . . . . . . . . . .
75
o
C/W
16
o
C/W
Weld Seal Flat Pack . . . . . . . . . . . . . .
64
o
C/W
12
o
C/W
Power Dissipation per Package (PD)
For T
A
= -55
o
C to +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
For T
A
= +100
o
C to +125
o
C Derate Linearly at 13mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max.
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
1
+25
o
C
7.2
-
mA
2, 3
+125
o
C, -55
o
C
6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND, VCC = 4.5V and
5.5V
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or
VCC
1
+25
o
C
-
1
A
2, 3
+125
o
C, -55
o
C
-
50
A
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTE:
1. All voltages reference to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
7-477
Specifications HCS245MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
Data to Output
TPLH
TPHL
VCC = 4.5V
9
+25
o
C
2
19
ns
10, 11
+125
o
C, -55
o
C
2
23
ns
Enable to Output
TPZL
TPZH
VCC = 4.5V
9
+25
o
C
2
26
ns
10, 11
+125
o
C, -55
o
C
2
30
ns
Disable to Output
TPLZ
TPHZ
VCC = 4.5V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
33
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
Typical 45
pF
1
+125
o
C, -55
o
C
Typical 45
pF
Input Capacitance
CIN
VCC = Open, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C, -55
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
12
ns
1
+125
o
C, -55
o
C
-
18
ns
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMP-
ERATURE
200K RAD
LIMITS
1M RAD
LIMITS
UNITS
MIN
MAX
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
-
3.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
6.0
-
5.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-6.0
-
-5.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOL = 50
A
+25
o
C
-
0.1
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOH = -50
A
+25
o
C
VCC
-0.1
-
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
-
5
A
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or VCC
+25
o
C
-
50
-
100
A
7-478
Specifications HCS245MS
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD (Note 3)
+25
o
C
-
-
-
-
-
Propagation Delay
Data to Output
TPLH
TPHL
VCC = 4.5V
+25
o
C
2
23
2
28
ns
Enable to Output
TPZL
TPZH
VCC = 4.5V
+25
o
C
2
30
2
36
ns
Enable to Output
TPLZ
TPHZ
VCC = 4.5V
+25
o
C
2
33
2
33
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
IOZL/IOZH
5
200nA
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
I
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
II
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test
III
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
NOTE:
1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
METHOD
TEST
READ AND RECORD
PRE RAD
POST RAD
PRE RAD
POST RAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMP-
ERATURE
200K RAD
LIMITS
1M RAD
LIMITS
UNITS
MIN
MAX
MIN
MAX
7-479
Specifications HCS245MS
TABLE 8. STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN
GROUND
1/2 VCC = 3V
0.5V
VCC = 6V
0.5V
OSCILLATOR
50kHz
25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1)
2 - 9
1, 10 - 19
-
20
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
-
10
-
1 - 9, 11 - 20
-
-
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
-
10
11 - 18
1, 20
2 - 9
19
NOTES:
1. Each pin except VCC and GND will have a resistor of 10K
5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 680
5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V
0.5V
-
10
1 - 9, 11 - 20
NOTE: Each pin except VCC and GND will have a resistor of 47K
5% for irradiation testing. Group E, Sub-
group 2, sample size is 4 dice/wafer 0 failures.
AC Timing Diagrams
AC VOLTAGE LEVELS
PARAMETER
HCS
UNITS
VCC
4.50
V
VIH
4.50
V
VS
2.25
V
VIL
0
V
GND
0
V
VS
INPUT
OUTPUT
OUTPUT
TTHL
80%
20%
80%
20%
VIH
VIL
VOH
VOL
VOH
VOL
TPLH
TPHL
VS
TTLH
AC Load Circuit
DUT
TEST
CL
RL
POINT
CL = 50pF
RL = 500
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