1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS283DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead SBDIP
HCS283KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
HCS283D/Sample
+25
o
C
Sample
16 Lead SBDIP
HCS283K/Sample
+25
o
C
Sample
16 Lead Ceramic Flatpack
HCS283HMSR
+25
o
C
Die
Die
HCS283MS
Radiation Hardened
4-Bit Full Adder with Fast Carry
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
B1
A1
S0
A0
B0
GND
CIN
A2
S2
A3
B3
S3
B2
SE 1
VCC
C0
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
B1
A1
S0
A0
B0
GND
CIN
A2
S2
A3
B3
S3
B2
SE 1
VCC
C0
Features
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-
Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% VCC Max
- VIH = 70% VCC Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS283MS is a Radiation Hardened 4-bit binary full
adder with fast carry that adds two 4-bit binary numbers and
generates a carry-out bit if the sum exceeds 15.
The device can be used in positive or negative logic. When using
positive logic the carry-in (CIN) input must be tied low, if there is
no carry-in signal.
The HCS283MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS283MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
October 1995
Spec Number
518850
File Number
4057
2
HCS283MS
Functional Diagram
9
COUT
10
S3
13
S2
1
S1
4
S0
A3
12
B3
11
B2
15
A2
14
B1
2
A1
3
B0
6
A0
5
CIN
7
GND
8
VCC
16
Spec Number
518850
3
Specifications HCS283MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
114
o
C/W
29
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .100ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V ,
Note 2
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, Note 2
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 3)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
V
NOTES:
1. All voltages reference to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518850
4
Specifications HCS283MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
CIN to SO
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
21
ns
10, 11
+125
o
C, -55
o
C
2
24
ns
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
22
ns
10, 11
+125
o
C, -55
o
C
2
26
ns
CIN to S1
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
24
ns
10, 11
+125
o
C, -55
o
C
2
28
ns
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
25
ns
10, 11
+125
o
C, -55
o
C
2
30
ns
CIN to S2, CO
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
28
ns
10, 11
+125
o
C, -55
o
C
2
33
ns
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
29
ns
10, 11
+125
o
C, -55
o
C
2
34
ns
CIN to S3
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
35
ns
10, 11
+125
o
C, -55
o
C
2
40
ns
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
35
ns
10, 11
+125
o
C, -55
o
C
2
43
ns
An, Bn to CO
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
44
ns
10, 11
+125
o
C, -55
o
C
2
55
ns
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
50
ns
10, 11
+125
o
C, -55
o
C
2
62
ns
An, Bn to Sn
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
51
ns
10, 11
+125
o
C, -55
o
C
2
62
ns
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
+25
o
C
2
46
ns
10, 11
+125
o
C, -55
o
C
2
58
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
+25
o
C
-
98
pF
+125
o
C, -55
o
C
-
120
pF
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0.0V, f = 1MHz
+25
o
C
-
10
pF
+125
o
C, -55
o
C
-
10
pF
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics..
Spec Number
518850
5
Specifications HCS283MS
TABLE 4. POSTIRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
750
A
Output Current (Sink)
IOL
VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = VIH = 4.5V, VOUT = VCC -0.4V,
VIL = 0V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
IOL = 50
A
+25
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V,
IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
IOL = 50
A
+25
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V,
IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
(Note 2)
+25
o
C
-
-
V
Propagation Delay
CIN to SO
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
24
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
26
ns
Propagation Delay
CIN to S1
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
28
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
30
ns
Propagation Delay
CIN to S2, CO
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
33
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
34
ns
Propagation Delay
CIN to S3
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
40
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
43
ns
Propagation Delay
An, Bn to CO
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
55
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
62
ns
Propagation Delay
An, Bn to Sn
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
62
ns
TPLH
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25
o
C
2
58
ns
NOTES:
1. All voltages referenced to device GND.
2. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
Spec Number
518850
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