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Электронный компонент: HCTS164MS

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS164DMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
14 Lead SBDIP
HCS164KMSR
-55
o
C to +125
o
C
Intersil Class S Equivalent
14 Lead Ceramic Flatpack
HCS164D/Sample
+25
o
C
Sample
14 Lead SBDIP
HCS164K/Sample
+25
o
C
Sample
14 Lead Ceramic Flatpack
HCS164HMSR
+25
o
C
Die
Die
HCS164MS
Radiation Hardened
8-Bit Serial-In/Parallel-Out Register
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14, LEAD FINISH C
TOP VIEW
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14, LEAD FINISH C
TOP VIEW
DS1
DS2
Q0
Q1
Q2
Q3
GND
VCC
Q7
Q6
Q5
Q4
MR
CP
1
2
3
4
5
6
7
14
13
12
11
10
9
8
DS1
DS2
Q0
Q1
Q2
Q3
GND
VCC
Q7
Q6
Q5
Q4
MR
CP
14
13
12
11
10
9
8
2
3
4
5
6
7
1
Features
3 Micron Radiation Hardened CMOS SOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
Latch-Up-Free Under Any Conditions
Fanout (Over Temperature Range)
- Standard Outputs - 10 LSTTL Loads
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
Input Current Levels Ii
5
A at VOL, VOH
Description
The Intersil HCS164MS is a Radiation Hardened 8-bit
Serial-In/Parallel-Out Shift Register that has fully synchro-
nous serial data entry and an asynchronous master reset.
The HCS164MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS164MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
September 1995
Spec Number
518756
File Number
2465.2
231
HCS164MS
Functional Diagram
TRUTH TABLE
OPERATING MODE
INPUTS
OUTPUTS
MR
CP
DS1
DS2
Q0
Q1-Q7
Reset (Clear)
L
X
X
X
L
L-L
Shift
H
l
l
L
q0 -q6
H
l
h
L
q0 - q6
H
h
l
L
q0 - q6
H
h
h
H
q0 - q6
H = High Voltage Level
h = HIGH voltage level one setup time prior to the LOW-to-HIGH clock transistion
L = Low VoltageLevel
l =
LOW voltage level one setup time prior to the LOW-to-HIGH clock transition.
= LOW-to-HIGH clock transition
q = Lower case letters indicate the state of the referenced input (or output) one setup time prior to the LOW-to-HIGH clock transition
D1
D2
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
CL
D
MR
CP
9
8
1
2
R
Q
3
4
5
6
10
11
12
13
CL
D
R
Q
CL
D
R
Q
CL
D
R
Q
CL
D
R
Q
CL
D
R
Q
CL
D
R
Q
CL
D
R
Q
Spec Number
518756
232
Specifications HCS164MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
DC Drain Current, Any One Output
. . . . . . . . . . . . . . . . . . . . . . .
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
JA
JC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74
o
C/W
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
116
o
C/W
30
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5 VCC (TR, TF) . . . . . . . .500ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
+25
o
C
-
40
A
2, 3
+125
o
C, -55
o
C
-
750
A
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
1
+25
o
C
4.8
-
mA
2, 3
+125
o
C, -55
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
1
+25
o
C
-4.8
-
mA
2, 3
+125
o
C, -55
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V,
IOL = 50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
IOH = -50
A, VIL = 1.35V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50
A, VIL = 1.65V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
+25
o
C
-
0.5
A
2, 3
+125
o
C, -55
o
C
-
5.0
A
Noise Immunity
Functional Test
FN
VCC = 4.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)
7, 8A, 8B
+25
o
C, +125
o
C, -55
o
C
-
-
-
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
Spec Number
518756
233
Specifications HCS164MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
CP to Qn
TPLH
TPHL
VCC = 4.5V
9
+25
o
C
2
32
ns
VCC = 4.5V
10, 11
+125
o
C, -55
o
C
2
37
ns
MR to Qn
TPHL
VCC = 4.5V
9
+25
o
C
2
32
ns
VCC = 4.5V
10, 11
+125
o
C, -55
o
C
2
37
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power Dissipation
CPD
VCC = 5.0V, f = 1MHz
+25
o
C
-
135
pF
+125
o
C, -55
o
C
-
165
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
+25
o
C
-
10
pF
+125
o
C, -55
o
C
-
10
pF
Output Transition Time
TTHL
TTLH
VCC = 4.5V
+25
o
C
-
15
ns
+125
o
C, -55
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50
A
+25
o
C
VCC
-0.1
-
V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
5
A
Spec Number
518756
234
Specifications HCS164MS
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3)
+25
o
C
-
-
-
CP to Qn
TPHL
TPLH
VCC = 4.5V
+25
o
C
2
37
ns
MR to Qn
TPHL
VCC = 4.5V
+25
o
C
2
37
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO
4.0V is recognized as a logic "1", and VO
0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12
A
IOL/IOH
5
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
READ AND RECORD
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
I
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
Interim Test
II
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test
III
(Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Group A (Note 1)
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroups 1, 2, 3, 9, 10, 11,
(Note 2)
Subgroup B-6
Sample/5005
1, 7, 9
Group D
Sample/5005
1, 7, 9
NOTES:
1. Alternate group A testing in accordance with method 5005 of MIL-STD-883 may be exercised.
2. Table 5 parameters only.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Spec Number
518756