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Электронный компонент: HGT1S5N120BNS

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HGTP5N120BN, HGT1S5N120BNS
21A, 1200V, NPT Series N-Channel IGBTs
The HGTP5N120BN and the HGT1S5N120BNS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49308.
Symbol
Features
21A, 1200V, T
C
= 25
o
C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . 175ns at T
J
= 150
o
C
Short Circuit Rating
Low Conduction Loss
Avalanche Rated
Thermal Impedance SPICE Model
Temperature Compensating SABERTM Model
www.intersil.com
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP5N120BN
TO-220AB
5N120BN
HGT1S5N120BNS
TO-263AB
5N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120BNS9A.
C
E
G
E
C
G
COLLECTOR
(FLANGE)
G
COLLECTOR
E
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
January 2000
File Number
4599.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABERTM is a trademark of Analogy, Inc.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTP5N120BN,
HGT1S5N120BNS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200
V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
21
A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
10
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
40
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
30
V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
30A at 1200V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
167
W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.33
W/
o
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AV
36
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
260
o
C
Short Circuit Withstand Time (Note 3) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
8
s
Short Circuit Withstand Time (Note 3) at V
GE
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
15
s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
CE
= 12A, L = 500
H.
3. V
CE(PK)
= 840V, T
J
= 125
o
C, R
G
= 25
.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
= 250
A, V
GE
= 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BV
ECS
I
C
= 10mA, V
GE
= 0V
15
-
-
V
Collector to Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= 25
o
C
-
-
250
A
T
C
= 125
o
C
-
100
-
A
T
C
= 150
o
C
-
-
1.5
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 5A,
V
GE
= 15V
T
C
= 25
o
C
-
2.45
2.7
V
T
C
= 150
o
C
-
3.7
4.2
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
C
= 45
A, V
CE
= V
GE
6.0
6.8
-
V
Gate to Emitter Leakage Current
I
GES
V
GE
=
20V
-
-
250
nA
Switching SOA
SSOA
T
J
= 150
o
C, R
G
= 25
,
V
GE
= 15V,
L = 5mH, V
CE(PK)
= 1200V
30
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
= 5A, V
CE
= 0.5 BV
CES
-
10.5
-
V
On-State Gate Charge
Q
G(ON)
I
C
= 5A,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
53
65
nC
V
GE
= 20V
-
60
72
nC
HGTP5N120BN, HGT1S5N120BNS
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 5A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 25
,
L = 5mH,
Test Circuit (Figure 18)
-
22
25
ns
Current Rise Time
t
rI
-
15
20
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
160
180
ns
Current Fall Time
t
fI
-
130
160
ns
Turn-On Energy (Note 4)
E
ON1
-
220
-
J
Turn-On Energy (Note 4)
E
ON2
-
450
600
J
Turn-Off Energy (Note 5)
E
OFF
-
390
450
J
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C,
I
CE
= 5A,
V
CE
= 0.8 BV
CES
,
V
GE
= 15V,
R
G
= 25
,
L = 5mH,
Test Circuit (Figure 18)
-
20
25
ns
Current Rise Time
t
rI
-
15
20
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
182
280
ns
Current Fall Time
t
fI
-
175
200
ns
Turn-On Energy (Note 4)
E
ON1
-
220
-
J
Turn-On Energy (Note 4)
E
ON2
-
1000
1300
J
Turn-Off Energy (Note 5)
E
OFF
-
560
800
J
Thermal Resistance Junction To Case
R
JC
-
-
0.75
o
C/W
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in Figure 18.
5. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECT
OR CURRENT (A)
50
0
25
75
100
125
150
5
10
15
25
20
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1400
0
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
600
800
400
200
1000
1200
0
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 5mH
5
10
15
20
25
30
35
HGTP5N120BN, HGT1S5N120BNS
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
f
MAX
, OPERA
TING FREQ
UENCY (kHz)
4
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
10
8
50
6
100
2
200
T
C
V
GE
75
o
C 12V
75
o
C 15V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.75
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
C
V
GE
12V
15V
110
o
C
110
o
C
T
J
= 150
o
C, R
G
= 25
, L = 5mH, V
CE
= 960V
IDEAL DIODE
T
C
= 75
o
C, V
GE
= 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHOR
T CIRCUIT CURRENT (A)
t
SC
, SHOR
T CIRCUIT WITHST
AND TIME (
s)
11
12
13
14
15
10
20
30
40
20
30
40
50
70
t
SC
I
SC
60
10
15
25
35
80
V
CE
= 840V, R
G
= 25
, T
J
= 125
o
C
T
C
= -55
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
5
10
15
6
8
10
30
25
20
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
GE
= 12V
T
C
= 25
o
C
T
C
= 150
o
C
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
10
15
20
0
2
4
6
8
10
5
25
0
30
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 150
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
s
E
ON2
, TURN-ON ENERGY LOSS (
J)
2500
1500
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1000
500
5
3
7
6
4
2
3000
8
9
10
2000
0
R
G
= 25
, L = 5mH, V
CE
= 960V
T
J
= 150
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (
J)
6
4
3
5
7
2
300
200
400
500
9
8
600
700
800
900
10
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
R
G
= 25
, L = 5mH, V
CE
= 960V
HGTP5N120BN, HGT1S5N120BNS
5
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 13. TRANSFER CHARACTERISTICS
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
dI
,
TURN-ON DELA
Y TIME
(ns)
3
2
4
6
20
30
5
7
9
8
10
40
35
25
15
R
G
= 25
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
RISE TIME
(ns)
0
10
15
40
20
4
2
30
3
7
6
5
25
10
9
8
35
R
G
= 25
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 12V
10
100
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELA
Y TIME
(ns)
250
225
200
175
150
2
3
4
5
6
7
8
9
R
G
= 25
, L = 5mH, V
CE
= 960V
V
GE
= 12V, V
GE
= 15V, T
J
= 150
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
125
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, F
ALL TIME
(ns)
150
50
250
100
200
2
3
4
5
6
7
8
9
10
R
G
= 25
, L = 5mH, V
CE
= 960V
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 150
o
C, V
GE
= 12V OR 15V
I
CE
, COLLECT
OR T
O
EMITTER CURRENT (A)
0
10
20
30
13
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
40
50
60
14
15
70
T
C
= 25
o
C
T
C
= -55
o
C
T
C
= 150
o
C
80
PULSE DURATION = 250
s
DUTY CYCLE <0.5%, V
CE
= 20V
V
GE
, GA
TE T
O
EMITTER V
O
L
T
A
GE (V)
Q
G
, GATE CHARGE (nC)
14
4
16
2
6
0
60
50
40
8
10
12
30
20
10
0
V
CE
= 800V
V
CE
= 400V
V
CE
= 1200V
I
G(REF)
= 1mA, R
L
= 120
, T
C
= 25
o
C
HGTP5N120BN, HGT1S5N120BNS