3-76
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
Features
20A, 400V and 500V
V
CE(ON)
2.5V Max.
T
FALL
1
s, 0.5
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
Anti-Parallel Diode
Applications
Power Supplies
Motor Drives
Protective Circuits
Description
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D,
and HGTH20N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching
regulators and motor drivers. They feature a discrete anti-
parallel diode that shunts current around the IGBT in the
reverse direction without introducing carriers into the
depletion region. These types can be operated directly from
low power integrated circuits.
April 1995
Package
JEDEC TO-218AC
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1D
TO-218AC
G20N40C1D
HGTH20N40E1D
TO-218AC
G20N40E1D
HGTH20N50C1D
TO-218AC
G20N50C1D
HGTH20N50E1D
TO-218AC
G20N50E1D
NOTE: When ordering, use the entire part number.
GATE
COLLECTOR
EMITTER
COLLECTOR
(FLANGE)
C
G
E
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTH20N40C1D
HGTH20N40E1D
HGTH20N50C1D
HGTH20N50E1D
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
400
500
V
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CGR
400
500
V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
20
20
V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
20
20
A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
35
35
A
Diode Forward Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . I
F25
35
35
A
at T
J
= +90
o
C. . . . . . . . . . . . . . . . . . . . . . I
F90
20
20
A
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
100
100
W
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.8
0.8
W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T
J
, T
STG
-55 to +150
-55 to +150
o
C
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
HGTH20N40C1D, HGTH20N40E1D,
HGTH20N50C1D, HGTH20N50E1D
20A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
File Number
2271.4
3-77
Specifications HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTH20N40C1D,
HGTH20N40E1D
HGTH20N50C1D,
HGTH20N50E1D
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 1mA, V
GE
= 0
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2.0
4.5
2.0
4.5
V
Zero Gate Voltage Collector Current
I
CES
V
CE
= 400V, T
C
= +25
o
C
-
250
-
-
A
V
CE
= 500V, T
C
= +25
o
C
-
-
-
250
A
V
CE
= 400V, T
C
= +125
o
C
-
1000
-
-
A
V
CE
= 500V, T
C
= +125
o
C
-
-
-
1000
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
20V, V
CE
= 0
-
100
-
100
nA
Collector-Emitter On Voltage
V
CE(ON)
I
C
= 20A, V
GE
= 10V
-
2.5
-
2.5
V
I
C
= 35A, V
GE
= 20V
-
3.2
-
3.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 10A, V
CE
= 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 10A, V
CE
= 10V
-
33 (Typ)
-
33 (Typ)
nC
Turn-On Delay Time
t
D(ON)I
I
C
= 20A, V
CE(CLP)
= 300V,
L = 25
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25
-
50
-
50
ns
Rise Time
t
RI
-
50
-
50
ns
Turn-Off Delay Time
t
D(OFF)I
-
400
-
400
ns
Fall Time
t
FI
40E1D, 50E1D
680
(Typ)
1000
680
(Typ)
1000
ns
40C1D, 50C1D
400
(Typ)
500
400
(Typ)
500
ns
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation = W
OFF
x
Frequency)
W
OFF
I
C
= 20A, V
CE(CLP)
= 300V,
L = 25
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 25
40E1D, 50E1D
1810 (Typ)
J
40C1D, 50C1D
1070 (Typ)
J
Thermal Resistance Junction-to-Case
R
JC
-
1.25
-
1.25
o
C/W
Diode Forward Voltage
V
EC
I
EC
= 20A
-
2
-
2
V
Diode Reverse Recovery Time
t
RR
I
EC
= 20A, dI
EC
/dt = 100A/
s
-
100
-
100
ns
3-78
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Typical Performance Curves
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. R
G
= 50
,
V
GE
= 0V ARE THE MIN. ALLOWABLE VALUES
FIGURE 2. POWER DISSIPATION vs TEMPERATURE
DERATING CURVE
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
AGE vs JUNCTION TEMPERATURE
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
40
35
30
25
20
15
10
5
0
-75
-50
-25
0
+25
+50 +75 +100 +125 +150 +175
I
CE
, COLLECT
OR CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GE
= 10V, R
GEN
= R
GS
= 50
100
80
60
40
20
RA
TED POWER DISSIP
A
TION (%)
0
+25
+50
+75
+125
+150
+100
T
C
, CASE TEMPERATURE (
o
C)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
NORMALIZED GA
TE THRESHOLD VOL
T
AGE (V)
-50
0
+50
+100
+150
TJ, JUNCTION TEMPERATURE (oC)
V
GE
= V
CE
, I
C
= 1mA
35
30
25
20
15
10
5
I
CE
, COLLECT
OR CURRENT (A)
0
2.5
5.0
7.5
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
V
CE
= 10V, PULSE TEST
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
-40
o
C
+25
o
C
+125
o
C
35
30
25
20
15
10
5
0
1
2
3
4
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
I
CE
, COLLECT
OR CURRENT (A)
T
C
= +25
o
C
V
GE
= 20V
V
GE
= 10V
V
GE
= 8V
V
GE
= 7V
V
GE
= 6V
V
GE
= 5V
V
GE
= 4V
35
30
25
20
15
10
5
I
CE
, COLLECT
OR CURRENT (A)
0
1
2
3
4
V
CE(ON)
, COLLECTOR-TO-EMITTER ON VOLTAGE (V)
V
GE
= 10V, PULSE TEST
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
+25
o
C
3-79
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 8. TYPICAL V
CE(ON)
vs TEMPERATURE
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 11. TYPICAL FALL TIME (I
C
= 10A)
FIGURE 12. TYPICAL FALL TIME (I
C
= 20A)
Typical Performance Curves
(Continued)
2700
2250
1800
1350
900
450
C, CAP
ACIT
ANCE (pF)
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 0.1MHz
CISS
COSS
CRSS
3.00
2.75
2.50
2.25
2.00
1.75
1.50
V
CE(ON)
, COLLECT
OR-EMITTER VOL
T
AGE (V)
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
C
= 10A, V
GE
= 15V
I
C
= 10A, V
GE
= 10V
I
C
= 20A, V
GE
= 15V
I
C
= 20A, V
GE
= 10V
400
300
200
100
0
t
D(OFF)I
, TURN OFF DELA
Y TIME (ns)
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
C
= 20A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
H, R
G
= 25
V
GE
V
CE
I
C
W
OFF
=
I
C
*
V
CE
dt
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
t
FI
, F
ALL TIME (ns)
I
C
= 10A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
H, R
G
= 25
40C1D/50C1D
40E1D/50E1D
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
t
FI
, F
ALL TIME (ns)
I
C
= 20A, V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
H, R
G
= 25
40C1D/50C1D
40E1D/50E1D
3-80
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
FIGURE 15. TYPICAL DIODE EMITTER-COLLECTOR
VOLTAGE vs CURRENT
FIGURE 16. TYPICAL DIODE REVERSE RECOVERY TIME
Test Circuit
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
900
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
W
OFF
, TURN-OFF ENERGY LOSS (
J)
T
J
, JUNCTION TEMPERATURE (
o
C)
10A, 40C1D/50C1D
10A, 40E1D/50E1D
20A, 40C1D/50C1D
20A, 40E1D/50E1D
V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
H, R
G
= 25
GATE
EMITTER
VOLTAGE
V
CC
= BV
CES
500
375
250
125
0
10
8
6
4
2
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
s)
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE (V)
V
GE
, GA
TE-EMITTER VOL
T
AGE (V)
NOTE: For Turn-Off gate currents in excess of 3mA. V
CE
Turn-Off
is not accurately represented by this normalization.
R
L
= 25
I
G
(REF) = 0.76mA
V
GE
= 10V
COLLECTOR-EMITTER VOLTAGE
V
CC
= 0.25 BV
CES
100
10
1.0
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
EC
, EMITTER-COLLECTOR VOLTAGE (V)
I
EC
, EMITTER COLLECT
OR CURRENT (A)
T
J
= +150
o
C
T
J
= +100
o
C
T
J
= +25
o
C
T
J
= -50
o
C
t
RR
, REVERSE RECOVER
Y TIME (ns)
I
EC
, EMITTER-COLLECTOR CURRENT (A)
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
18
20
TYPICAL REVERSE RECOVERY TIME
dI
EC
/dt
100A/
s
V
R
= 30V, T
J
= +25
o
C
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 25
H
V
CE(CLP)
=
R
L
= 4
300V
V
CC
100V
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