4-29
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HRF3205, HRF3205S
100A, 55V, 0.008 Ohm, N-Channel, Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
NOTE: Calculated continuous current based on maximum
allowable junction temperature. Package limited to 75A
continuous, see Figure 9.
Features
100A, 55V (See Note)
Low On-Resistance, r
DS(ON)
= 0.008
Temperature Compensating PSPICE
Model
Thermal Impedance SPICE Model
UIS Rating Curve
Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HRF3205
TO-220AB
HRF3205
HRF3205S
TO-263AB
HRF3205S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.
D
G
S
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
June 1999
File Number
4447.4
4-30
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Othewise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
55
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
55
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
20V
V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
100
390
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Figure 10
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175
1.17
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
55
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55V, V
GS
= 0V
-
-
25
A
V
DS
= 44V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Breakdown Voltage Temperature
Coefficient
V
(BR)DSS
/
T
J
Reference to 25
o
C, I
D
= 250
A
-
0.057
-
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 59A, V
GS
= 10V (Figure 4)
-
0.0065
0.008
Turn-On Delay Time
t
d(ON)
V
DD
= 28V, I
D
59A,
R
L
= 0.47
, V
GS
=
10V,
R
GS
= 2.5
-
14
-
ns
Rise Time
t
r
-
100
-
ns
Turn-Off Delay Time
t
d(OFF)
-
43
-
ns
Fall Time
t
f
-
70
-
ns
Total Gate Charge
Q
g
V
DD
= 44V, I
D
59A,
V
GS
= 10V, I
g(REF)
= 3mA
(Figure 6)
-
-
170
nC
Gate to Source Charge
Q
gs
-
-
32
nC
Gate to Drain "Miller" Charge
Q
gd
-
-
74
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 5)
-
4000
-
pF
Output Capacitance
C
OSS
-
1300
-
pF
Reverse Transfer Capacitance
C
RSS
-
480
-
pF
Internal Source Inductance
L
S
Measured From the Contact
Screw on Tab to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices In-
ductances
-
7.5
-
nH
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Internal Drain Inductance
L
D
Measured From the Source
Lead, 6mm (0.25in) From Head-
er to Source Bonding Pad
-
4.5
-
nH
Thermal Resistance Junction to Case
R
JC
-
-
0.85
o
C/W
Thermal Resistance Junction to
Ambient
R
JA
TO-220
-
-
62
o
C/W
TO-263 (PCB Mount, Steady State)
-
-
40
o
C/W
L
S
L
D
G
D
S
HRF3205, HRF3205S
4-31
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
MOSFET
Symbol Showing
The Integral
Reverse P-N
Junction Diode
-
-
100
(Note 1
A
Pulsed Source to Drain Current (Note 2)
I
SDM
-
-
390
A
Source to Drain Diode Voltage
V
SD
I
SD
= 59A (Note 4)
-
-
1.3
V
Reverse Recovery Time
t
rr
I
SD
= 59A, dI
SD
/dt = 100A/
s (Note 4)
-
110
170
ns
Reverse Recovered Charge
Q
RR
I
SD
= 59A, dI
SD
/dt = 100A/
s (Note 4)
-
450
680
nC
NOTE:
2. Repetitive rating; pulse width limited by maximum junction temperature (See Figure 11)
Typical Performance Curves
FIGURE 1. OUTPUT CHARACTERISTICS
FIGURE 2. OUTPUT CHARACTERISTICS
FIGURE 3. TRANSFER CHARACTERISTICS
FIGURE 4. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
D
G
S
10
100
1000
0.1
1.0
10
100
20
s PULSE WIDTH
T
C
= 25
o
C
V
GS
IN DECENDING ORDER
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN T
O
SOURCE CURRENT (A)
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
15V
10
100
1000
0.1
1
10
100
20
s PULSE WIDTH
T
C
= 175
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN T
O
SOURCE CURRENT (A)
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
15V
V
GS
IN DECENDING ORDER
1
10
100
1000
3
4.5
6
7.5
9
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN T
O
SOURCE CURRENT(A)
PULSE DURATION = 80
s
V
DS
= 25V
T
J
= 25
o
C
T
J
= 175
o
C
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
I
D
= 98A, V
GS
= 10V
PULSE DURATION = 80
s
NORMALIZED DRAIN T
O
SOURCE
ON RESIST
ANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
DUTY CYCLE = 0.5% MAX
HRF3205, HRF3205S
4-32
FIGURE 5. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 7. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
FIGURE 8. FORWARD BIAS SAFE OPERATING AREA
FIGURE 9. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
Typical Performance Curves
(Continued)
0
1000
2000
3000
4000
5000
6000
7000
8000
10
100
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
C
ISS
C
OSS
C
RSS
C, CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
0
4
8
12
16
20
0
36
72
108
144
180
Q
g
, GATE CHARGE (nC)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DS
= 44V
V
DS
= 28V
V
DS
= 11V
I
D
= 59A
1
10
100
1000
0.5
1.0
1.5
2.0
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
I
SD
, REVERSE DRAIN CURRENT(A)
T
J
= 175
o
C
T
J
= 25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
1
10
100
1000
1
10
100
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
V
DSS(MAX)
= 55V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
s
1ms
10ms
10
s
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
0
30
60
90
120
25
50
75
100
125
150
175
BY PACKAGE
CURRENT LIMITED
1
10
100
0.01
1000
10
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.1
100
HRF3205, HRF3205S
4-33
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
Test Circuits and Waveforms
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
FIGURE 14. GATE CHARGE TEST CIRCUIT
FIGURE 15. GATE CHARGE WAVEFORM
Typical Performance Curves
(Continued)
0.01
0.1
1
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
G(REF)
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
G(REF)
0
HRF3205, HRF3205S
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