1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HUF75343G3, HUF75343P3, HUF75343S3S
75A, 55V, 0.009 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFETTM process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75343.
Features
75A, 55V
Simulation Models
- Temperature Compensating PSPICE
and SABER
Models
- Thermal Impedance PSPICETM and SABER Models
Available on the WEB at:
www.Intersil.com/families/models.htm
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75343G3
TO-247
75343G
HUF75343P3
TO-220AB
75343P
HUF75343S3S
TO-263AB
75343S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
June 1999
File Number
4352.5
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
55
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
55
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
75
Figure 4
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
270
1.81
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 11)
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 50V, V
GS
= 0V
-
-
1
A
V
DS
= 45V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 75A, V
GS
= 10V (Figure 9)
-
0.007
0.009
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
JC
(Figure 3)
-
-
0.55
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-247
-
-
30
o
C/W
TO-220, TO-263
-
-
62
o
C/W
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 30V, I
D
75A,
R
L
= 0.4
, V
GS
=
10V,
R
GS
= 2.5
-
-
125
ns
Turn-On Delay Time
t
d(ON)
-
9
-
ns
Rise Time
t
r
-
75
-
ns
Turn-Off Delay Time
t
d(OFF)
-
32
-
ns
Fall Time
t
f
-
18
-
ns
Turn-Off Time
t
OFF
-
-
75
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 30V,
I
D
75A,
R
L
= 0.4
I
g(REF)
= 1.0mA
(Figure 13)
-
170
205
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
92
110
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
6.0
7.2
nC
Gate to Source Gate Charge
Q
gs
-
13
-
nC
Reverse Transfer Capacitance
Q
gd
-
42
-
nC
HUF75343G3, HUF75343P3, HUF75343S3S
3
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
3000
-
pF
Output Capacitance
C
OSS
-
1100
-
pF
Reverse Transfer Capacitance
C
RSS
-
230
-
pF
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 75A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 75A, dI
SD
/dt = 100A/
s
-
-
100
ns
Reverse Recovered Charge
Q
RR
I
SD
= 75A, dI
SD
/dt = 100A/
s
-
-
200
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
20
40
60
80
50
75
100
125
150
175
0
25
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
0.1
1
2
0.01
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
HUF75343G3, HUF75343P3, HUF75343S3S
4
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
50
100
1000
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
2000
10
100
1000
10
100
1
1
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
100
s
10ms
1ms
V
DSS(MAX)
= 55V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
1
10
100
0.01
500
10
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.1
0
1.5
2.0
2.5
3.0
4.0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
V
GS
= 10V
V
GS
= 20V
PULSE DURATION = 80
s
T
C
= 25
o
C
V
GS
= 5V
V
GS
= 7V
0
50
100
150
3.5
0.5
1.0
DUTY CYCLE = 0.5% MAX
0
3.0
4.5
6.0
7.5
1.5
0
50
100
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
175
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
150
HUF75343G3, HUF75343P3, HUF75343S3S
5
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5
-80
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
PULSE DURATION = 80
s
V
GS
= 10V, I
D
= 75A
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
-40
0
40
80
120
160
200
0.6
-80
NORMALIZED GA
TE
T
J
, JUNCTION TEMPERATURE (
o
C)
THRESHOLD V
O
L
T
A
GE
V
GS
= V
DS
, I
D
= 250
A
0.9
1.0
1.1
1.2
-40
0
40
80
120
160
200
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
I
D
= 250
A
BREAKDO
WN V
O
L
T
A
GE
4000
2000
0
0
10
20
30
40
50
C, CAP
A
CIT
ANCE (pF)
3000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
C
ISS
C
OSS
C
RSS
60
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
10
8
6
4
0
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DD
= 30V
2
60
80
100
0
Q
g
, GATE CHARGE (nC)
20
40
I
D
= 75A
I
D
= 47A
I
D
= 18A
WAVEFORMS IN
DESCENDING ORDER:
HUF75343G3, HUF75343P3, HUF75343S3S
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