1
TM
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a registered trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
SABERTM is a trademark of Analogy, Inc.
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1-888-INTERSIL or 321-724-7143
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Copyright
Intersil Corporation 2000.
HUF76113DK8
6A, 30V, 0.032 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76113.
Features
Logic Level Gate Drive
6A, 30V
Ultra Low On-Resistance, r
DS(ON)
= 0.032
Temperature Compensating PSPICE
Model
Temperature Compensating SABER
TM
Model
Thermal Impedance SPICE Model
Thermal Impedance SABER Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76113DK8
MS-012AA
76113DK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76113DK8T.
G1(2)
D1(8)
S1(1)
D1(7)
D2(6)
D2(5)
S2(3)
G2(4)
BRANDING DASH
1
2
3
4
5
Data Sheet
June 2000
File Number
4387.5
2
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
HUF76113DK8
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
30
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
16
V
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
6
1.8
1.7
Figure 4
A
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Figure 6
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5
0.02
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50oC/W measured using FR-4 board at 1 second.
3. 228
o
C/W measured using FR-4 board with 0.006 in
2
footprint at 1000 seconds.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 12)
30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 25V, V
GS
= 0V
-
-
1
A
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
16V
-
-
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 11)
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 6A, V
GS
= 10V (Figures 9, 10)
-
0.026
0.032
I
D
= 1.8A, V
GS
= 5V (Figure 9)
-
0.033
0.041
I
D
= 1.7A, V
GS
= 4.5V (Figure 9)
-
0.035
0.043
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Ambient
R
JA
Pad Area = 0.76 in
2
(Note 2)
-
-
50
o
C/W
Pad Area = 0.027 in
2
(See TB377)
-
-
191
o
C/W
Pad Area = 0.006 in
2
(See TB377)
-
-
228
o
C/W
SWITCHING SPECIFICATIONS (V
GS
= 4.5V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
1.7A, R
L
= 8.8
,
V
GS
=
4.5V, R
GS
= 18
,
(Figure 15)
-
-
110
ns
Turn-On Delay Time
t
d(ON)
-
17
-
ns
Rise Time
t
r
-
57
-
ns
Turn-Off Delay Time
t
d(OFF)
-
32
-
ns
Fall Time
t
f
-
38
-
ns
Turn-Off Time
t
OFF
-
-
105
ns
HUF76113DK8
3
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
6A, R
L
= 2.5
, V
GS
=
10V,
R
GS
= 18
(Figure 16)
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
6.5
-
ns
Rise Time
t
r
-
33
-
ns
Turn-Off Delay Time
t
d(OFF)
-
50
-
ns
Fall Time
t
f
-
40
-
ns
Turn-Off Time
t
OFF
-
-
135
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V, I
D
1.8A,
R
L
= 8.3
I
g(REF)
= 1.0mA
(Figure 14)
-
16.0
19.2
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
8.4
10.2
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
0.55
0.66
nC
Gate to Source Gate Charge
Q
gs
-
1.50
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
3.90
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
605
-
pF
Output Capacitance
C
OSS
-
275
-
pF
Reverse Transfer Capacitance
C
RSS
-
40
-
pF
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 6A
-
-
1.25
V
I
SD
= 1.8A
1.00
V
Reverse Recovery Time
t
rr
I
SD
= 1.8A, dI
SD
/dt = 100A/
s
-
-
40
ns
Reverse Recovered Charge
Q
RR
I
SD
= 1.8A, dI
SD
/dt = 100A/
s
-
-
42
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
1
2
3
4
5
7
25
50
75
100
125
150
I
D
, DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= 4.5V, R
JA
= 228
o
C/W
V
GS
= 10V, R
JA
= 50
o
C/W
6
HUF76113DK8
4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
Typical Performance Curves
(Continued)
0.001
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Z
JA
, NORMALIZED
THERMAL IMPED
ANCE
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
R
JA
= 228
o
C/W
2
1
10
100
500
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
V
GS
= 5V
R
JA
= 228
o
C/W
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
T
J
= MAX RATED
T
A
= 25
o
C
100
s
10ms
1ms
V
DSS(MAX)
= 30V
10
100
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
100
500
10
I
D
, DRAIN CURRENT (A)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
1
10
100
50
1
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.1
10
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
HUF76113DK8
5
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
3
4
5
2
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
150
o
C
-55
o
C
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
30
1
25
0
5
10
15
0
1
2
3
4
5
20
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
T
A
= 25
o
C
25
V
GS
= 5V
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 3V
30
V
GS
= 3.5V
V
GS
= 4V
DUTY CYCLE = 0.5% MAX
I
D
= 1.8A
0
50
100
150
200
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 6A
PULSE DURATION = 80
s
r
DS(ON)
, DRAIN T
O
SOURCE
ON RESIST
ANCE (m
)
0
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
1.6
-80
-40
0
40
80
120
160
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
PULSE DURATION = 80
s
1.4
V
GS
= 10V, I
D
= 6A
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
0.6
0.7
0.8
0.9
1.2
NORMALIZED GA
TE
T
J
, JUNCTION TEMPERATURE (
o
C)
THRESHOLD V
O
L
T
A
G
E
V
GS
= V
DS
, I
D
= 250
A
1.0
1.1
1.2
1.1
1.0
0.9
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
I
D
= 250
A
HUF76113DK8
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