4-1
File Number
4694.3
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFETTM is a trademark of Intersil Corporation. PSPICE
is a registered trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy Inc. 1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 1999.
HUF76639P3, HUF76639S3S
50A, 100V, 0.027 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.026
,
V
GS
=
10V
- r
DS(ON)
= 0.027
,
V
GS
=
5V
Simulation Models
- Temperature Compensated PSPICE
and SABER
Electrical Models
- Spice and SABER
Thermal Impedance Models
- www.Intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
HUF76639P3
GATE
SOURCE
DRAIN
(FLANGE)
HUF76639S3S
D
G
S
PART NUMBER
PACKAGE
BRAND
HUF76639P3
TO-220AB
76639P
HUF76639S3S
TO-263AB
76639S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76639S3ST.
HUF76639P3,
HUF76639S3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
100
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
100
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
16
V
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
50
51
35
34
Figure 4
A
A
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180
1.2
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
November 1999
4-2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 12)
100
-
-
V
I
D
= 250
A, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
90
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 95V, V
GS
= 0V
-
-
1
A
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
A
Gate to Source Leakage Current
I
GSS
V
GS
=
16V
-
-
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 11)
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 51A, V
GS
= 10V (Figures 9, 10)
-
0.023
0.026
I
D
= 35A, V
GS
= 5V (Figure 9)
-
0.024
0.027
I
D
= 34A, V
GS
= 4.5V (Figure 9)
-
0.025
0.028
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
JC
TO-220 and TO-263
-
-
0.83
o
C/W
Thermal Resistance Junction to
Ambient
R
JA
-
-
62
o
C/W
SWITCHING SPECIFICATIONS (V
GS
= 4.5V)
Turn-On Time
t
ON
V
DD
= 50V, I
D
= 34A
V
GS
=
4.5V, R
GS
= 12
(Figures 15, 21, 22)
-
-
336
ns
Turn-On Delay Time
t
d(ON)
-
17
-
ns
Rise Time
t
r
-
207
-
ns
Turn-Off Delay Time
t
d(OFF)
-
83
-
ns
Fall Time
t
f
-
136
-
ns
Turn-Off Time
t
OFF
-
-
328
ns
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 50V, I
D
= 51A
V
GS
=
10V, R
GS
= 12
(Figures 16, 21, 22)
-
-
96
ns
Turn-On Delay Time
t
d(ON)
-
10
-
ns
Rise Time
t
r
-
55
-
ns
Turn-Off Delay Time
t
d(OFF)
-
151
-
ns
Fall Time
t
f
-
110
-
ns
Turn-Off Time
t
OFF
-
-
392
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 50V,
I
D
= 35A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
71
86
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
39
47
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
2.0
2.4
nC
Gate to Source Gate Charge
Q
gs
-
6
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
19
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
2400
-
pF
Output Capacitance
C
OSS
-
520
-
pF
Reverse Transfer Capacitance
C
RSS
-
140
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 35A
-
-
1.25
V
I
SD
= 15A
-
-
1.0
V
Reverse Recovery Time
t
rr
I
SD
= 35A, dI
SD
/dt = 100A/
s
-
-
137
ns
Reverse Recovered Charge
Q
RR
I
SD
= 35A, dI
SD
/dt = 100A/
s
-
-
503
nC
HUF76639P3, HUF76639S3S
4-3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
10
20
30
40
50
60
25
50
75
100
125
150
175
0
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
JC
, NORMALIZED
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
THERMAL IMPED
ANCE
100
1000
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
50
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
V
GS
= 5V
HUF76639P3, HUF76639S3S
4-4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
1
10
100
300
1
300
100
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
0.01
0.1
1
10
100
10
100
1
500
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
25
50
75
100
1.5
2.0
2.5
3.0
3.5
4.0
0
I
D,
DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
25
50
75
100
0
1
2
3
4
5
0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 5V
V
GS
= 10V
V
GS
= 4V
25
30
35
40
2
4
6
8
10
20
I
D
= 15A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 51A
r
DS(ON)
, DRAIN T
O
SOURCE
ON RESIST
ANCE (m
)
I
D
= 35A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
0.5
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
V
GS
= 10V, I
D
= 51A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
HUF76639P3, HUF76639S3S
4-5
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
0.4
NORMALIZED GA
TE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
THRESHOLD V
O
L
T
A
G
E
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
I
D
= 250
A
100
1000
0.1
1
10
100
5000
40
C, CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
2
4
6
8
10
0
15
30
45
60
75
0
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DD
= 50V
Q
g
, GATE CHARGE (nC)
I
D
= 51A
I
D
= 35A
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 15A
100
200
300
400
0
10
20
30
40
50
0
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 50V, I
D
= 34A
t
r
t
f
t
d(ON)
t
d(OFF)
200
300
400
500
600
0
10
20
30
40
50
0
100
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 50V, I
D
= 51A
t
d(OFF)
t
r
t
d(ON)
t
f
HUF76639P3, HUF76639S3S
PDF 
ZIP