1
File Number
4799.3
ITF86174SQT
9A, 30V, 0.016 Ohm, P-Channel, Logic
Level, Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.016
,
V
GS
= -
10V
- r
DS(ON)
= 0.024
,
V
GS
= -
4.5V
- r
DS(ON)
= 0.027
,
V
GS
= -
4V
Gate to Source Protection Diode
Simulation Models
- Temperature Compensated PSPICETM and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
TSSOP-8
4
1
2 3
5
SOURCE(2)
DRAIN(8)
DRAIN(1)
SOURCE(7)
SOURCE(6)
DRAIN(5)
SOURCE(3)
GATE(4)
PART NUMBER
PACKAGE
BRAND
ITF86174SQT
TSSOP-8
86174
NOTE: When ordering, use the entire part number. ITF86174SQT2
is available only in tape and reel.
ITF86174SQT
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-30
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
9.0
7.0
4.5
4.0
Figure 4
A
A
A
A
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.0
16
W
mW/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 62.5
o
C/W measured using FR-4 board with 1.0in
2
(645.2mm
2
) copper pad at 10s.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
March 2000
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
SABER is a Copyright of Analogy Inc.
|
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V Figure 11
-30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30V, V
GS
= 0V
-
-
-1
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
10
A
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A Figure 10
-1.0
-
-2.5
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 9.0A, V
GS
= -10V Figures 8, 9
-
0.012
0.016
I
D
= 4.5A, V
GS
= -4.5V Figure 8
-
0.018
0.024
I
D
= 4.0A, V
GS
= -4.0V Figure 8
-
0.020
0.027
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
JA
Pad Area = 1.0 in
2
(645.2 mm
2
) (Note 2)
-
-
62.5
o
C/W
Pad Area = 0.035 in
2
(22.4 mm
2
) Figure 20
-
-
165.4
o
C/W
Pad Area = 0.0045 in
2
(2.88 mm
2
) Figure 20
-
-
206.8
o
C/W
SWITCHING SPECIFICATIONS V
GS
= -4.5V
Turn-On Delay Time
t
d(ON)
V
DD
= -15V, I
D
= 4.5A
V
GS
=
-4.5V,
R
GS
= 6.8
Figures 14, 18, 19
-
19
-
ns
Rise Time
t
r
-
64
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
48
-
ns
SWITCHING SPECIFICATIONS V
GS
= -10V
Turn-On Delay Time
t
d(ON)
V
DD
= -15V, I
D
= 9.0A
V
GS
=
-10V,
R
GS
= 7.5
Figures 15, 18, 19
-
13
-
ns
Rise Time
t
r
-
52
-
ns
Turn-Off Delay Time
t
d(OFF)
-
67
-
ns
Fall Time
t
f
-
62
-
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to -10V
V
DD
= -15V,
I
D
= 7.0A,
I
g(REF)
= -1.0mA
Figures 13, 16, 17
-
39
-
nC
Gate Charge at -5V
Q
g(-5)
V
GS
= 0V to -5V
-
22
-
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to -1V
-
2
-
nC
Gate to Source Gate Charge
Q
gs
-
5.7
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
8.8
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
Figure 12
-
2000
-
pF
Output Capacitance
C
OSS
-
475
-
pF
Reverse Transfer Capacitance
C
RSS
-
215
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= -9.0A
-
-0.8
-
V
Reverse Recovery Time
t
rr
I
SD
= -9.0A, dI
SD
/dt = 100A/
s
-
26
-
ns
Reverse Recovered Charge
Q
RR
I
SD
= -9.0A, dI
SD
/dt = 100A/
s
-
14
-
nC
ITF86174SQT
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
-6
-8
-10
50
75
100
125
150
0
25
I
D
, DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= -4.0V, R
JA
= 187.7
o
C/W
V
GS
= -10V, R
JA
= 62.5
o
C/W
-2
-4
0.01
1
3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.001
10
-5
t, RECTANGULAR PULSE DURATION (s)
Z
JA
, NORMALIZED
THERMAL IMPED
ANCE
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
R
JA
= 62.5
o
C/W
0.1
-10
-100
-800
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-5
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
V
GS
= -4.0V
R
JA
= 62.5
o
C/W
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
I = I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
ITF86174SQT
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
-10
-60
-1
-10
-500
-1
100
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
A
= 25
o
C
SINGLE PULSE
-100
R
JA
= 62.5
o
C/W
0
-10
-20
-30
-40
-1.5
-2.0
-2.5
-3.0
-3.5
I
D,
DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
-10
-20
-30
-40
0
-0.5
-1.0
-1.5
0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -3V
T
A
= 25
o
C
V
GS
= -3.5V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= -5V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4V
I
D
= -1A
10
15
30
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -9A
r
DS(ON)
, DRAIN T
O
SOURCE
ON RESIST
ANCE (m
)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
-3
-5
-7
-9
20
25
1.0
1.4
1.6
0.6
0.8
1.2
-80
-40
0
40
80
120
160
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
V
GS
= -10V, I
D
= -9A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
NORMALIZED GA
TE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= -250
A
THRESHOLD V
O
L
T
A
G
E
ITF86174SQT
5
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.90
1.00
1.10
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
I
D
= -250
A
0.95
1.05
100
1000
3000
-0.1
-1.0
-10
-30
C, CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
-2
-4
-6
-8
-10
0
10
20
30
40
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DD
= -15V
Q
g
, GATE CHARGE (nC)
I
D
= -9A
I
D
= -1A
WAVEFORMS IN
DESCENDING ORDER:
100
150
200
0
10
20
30
40
50
0
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= -4.5V, V
DD
= -15V, I
D
= -4.5A
t
d(OFF)
t
r
t
f
t
d(ON)
50
50
150
250
300
0
10
20
30
40
50
0
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= -10V, V
DD
= -15V, I
D
= -9A
t
d(OFF)
t
r
t
d(ON)
t
f
100
200
ITF86174SQT
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