1
File Number
4797.2
ITF86182SK8T
11A, 30V, 0.0115 Ohm, P-Channel, Logic
Level, Power MOSFET
Packaging
SO8 (JEDEC MS-012AA)
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.0115
,
V
GS
= -
10V
- r
DS(ON)
= 0.016
,
V
GS
= -
4.5V
- r
DS(ON)
= 0.0175
,
V
GS
= -
4V
Gate to Source Protection Diode
Simulation Models
- Temperature Compensated PSPICETM and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Switching Time vs R
GS
Curves
BRANDING DASH
1
2
3
4
5
SOURCE(2)
DRAIN(8)
SOURCE(1)
DRAIN(7)
DRAIN(6)
DRAIN(5)
SOURCE(3)
GATE(4)
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF86182SK8T
SO8
86182
NOTE: When ordering, use the entire part number. ITF86182SK8T
is available only in tape and reel.
ITF86182SK8T
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-30
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
-11.0
-9.0
-6.0
-6.0
Figure 4
A
A
A
A
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5
20
W
mW/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 10 second.
Data Sheet
January 2000
[ /Title
(ITF86
182SK
8T)
/Sub-
ject
(11A,
30V,
0.0115
Ohm,
P-
Chan-
nel,
Logic
Level,
Power
MOS-
FET)
/Author
()
/Key-
words
(Inter-
sil,
Semi-
conduc-
tor, P-
Chan-
nel,
Logic
Level
Power
MOS-
FET,
SO8)
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
SABER is a Copyright of Analogy Inc.http://www.intersil.com or 321-727-9207
|
Copyright
Intersil Corporation 2000
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ITF86182SK8TOFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V Figure 11
-30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30V, V
GS
= 0V
-
-
-1
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
10
uA
ITF86182SK8TON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A Figure 10
-1.0
-
-2.5
V
Drain to Source On Resistance
r
DS(ON)
I
D
= -11.0A, V
GS
= -10V Figures 8, 9
-
0.0085
0.0115
I
D
= -6.0A, V
GS
= -4.5V Figure 8
-
0.011
0.016
I
D
= -6.0A, V
GS
= -4.0V Figure 8
-
0.012
0.0175
ITF86182SK8TTHERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
JA
Pad Area = 0.76 in
2
(490.3 mm
2
) (Note 2)
-
-
50
o
C/W
Pad Area = 0.054 in
2
(34.8 mm
2
) Figure 20
-
-
152
o
C/W
Pad Area = 0.0115 in
2
(7.42 mm
2
) Figure 20
-
-
189
o
C/W
ITF86182SK8TSWITCHING SPECIFICATIONS (V
GS
= -4.5V)
Turn-On Delay Time
t
d(ON)
V
DD
= -15V, I
D
= -6.0A
V
GS
=
-4.5V,
R
GS
= 4.9
Figures 14, 18, 19
-
20
-
ns
Rise Time
t
r
-
80
-
ns
Turn-Off Delay Time
t
d(OFF)
-
70
-
ns
Fall Time
t
f
-
80
-
ns
ITF86182SK8TSWITCHING SPECIFICATIONS (V
GS
= -10V)
Turn-On Delay Time
t
d(ON)
V
DD
= -15V, I
D
= -11.0A
V
GS
=
-10V,
R
GS
= 4.9
Figures 15, 18, 19
-
16
-
ns
Rise Time
t
r
-
85
-
ns
Turn-Off Delay Time
t
d(OFF)
-
100
-
ns
Fall Time
t
f
-
105
-
ns
ITF86182SK8TGATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to -10V
V
DD
= -15V,
I
D
= -6.0A,
I
g(REF)
= -1.0mA
Figures 13, 16, 17
-
67
-
nC
Gate Charge at -5V
Q
g(-5)
V
GS
= 0V to -5V
-
37
-
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to -1V
-
3.4
-
nC
Gate to Source Gate Charge
Q
gs
-
8
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
13.5
-
nC
ITF86182SK8TCAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
Figure 12
-
3375
-
pF
Output Capacitance
C
OSS
-
790
-
pF
Reverse Transfer Capacitance
C
RSS
-
375
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= -6.0A
-
-0.8
-
V
Reverse Recovery Time
t
rr
I
SD
= -6.0A, dI
SD
/dt = 100A/
s
-
33
-
ns
Reverse Recovered Charge
Q
RR
I
SD
= -6.0A, dI
SD
/dt = 100A/
s
-
20
-
nC
ITF86182SK8T
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
-3
-6
-9
-12
25
50
75
100
120
150
I
D
, DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= -4.0V, R
JA
= 189
o
C/W
V
GS
= -10V, R
JA
= 50
o
C/W
0.001
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
3
t, RECTANGULAR PULSE DURATION (s)
Z
JA
, NORMALIZED
THERMAL IMPED
ANCE
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
R
JA
= 50
o
C/W
-10
-100
-1000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
-5
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
V
GS
= -4.5V
R
JA
= 50
o
C/W
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
I = I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
ITF86182SK8T
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
-1
-10
-100
-1
-10
-100
-300
100
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
T
A
= 25
o
C
SINGLE PULSE
R
JA
= 50
o
C/W
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
0
-10
-20
-30
-40
-1
-1.5
-2.0
-2.5
-3.0
I
D,
DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
0
-10
-20
-30
-40
0
-0.2
-0.4
-0.6
-0.8
-1
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -3V
V
GS
= -5V
V
GS
= -10V
T
A
= 25
o
C
V
GS
= -3.5V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
GS
= -4.5V
5
10
15
20
25
-2
-4
-6
-8
-10
I
D
= -2A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -11A
r
DS(ON)
, DRAIN T
O
SOURCE
ON RESIST
ANCE (m
)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
1.4
1.6
-80
-40
0
40
80
120
160
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
V
GS
= -10V, I
D
= -11A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
NORMALIZED GA
TE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= -250
A
THRESHOLD V
O
L
T
A
G
E
ITF86182SK8T
5
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.90
0.95
1.0
1.05
1.10
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
I
D
= -250
A
1000
-0.1
-1
-10
5000
300
-30
C, CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
= C
GD
0
-2
-4
-6
-8
-10
0
15
30
45
60
75
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DD
= -15V
Q
g
, GATE CHARGE (nC)
I
D
= -11A
I
D
= -2A
WAVEFORMS IN
DESCENDING ORDER:
0
100
200
300
0
10
20
30
40
50
400
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= -4.5V, V
DD
= -15V, I
D
= -6A
t
d(OFF)
t
r
t
f
t
d(ON)
0
100
200
300
400
500
0
10
20
30
40
50
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (W)
V
GS
= -10V, V
DD
= -15V, I
D
= -11A
t
d(OFF)
t
r
t
d(ON)
t
f
ITF86182SK8T
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