1
File Number
2780.4
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
MUR8100E, RURP8100
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes
(t
rr
< 75ns) with soft recovery characteristics. They have a
low forward voltage drop and are of planar, silicon nitride
passivated, ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast recovery with soft recovery
characteristics minimize ringing and electrical noise in many
power switching circuits, thus reducing power loss in the
switching transistor.
Formerly developmental type TA09617.
Symbol
Features
Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns
Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supply
Power Switching Circuits
General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER
PACKAGE
BRAND
MUR8100E
TO-220AC
MUR8100
RURP8100
TO-220AC
RURP8100
NOTE: When ordering, use entire part number.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
MUR8100E
RURP8100
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
1000
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1000
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
1000
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 155
o
C)
8
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave 20kHz)
16
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave 1 Phase 60Hz)
100
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
75
W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
20
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
-55 to 175
o
C
Data Sheet
January 2000
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified.
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 8A
-
-
1.8
V
I
F
= 8A, T
C
= 150
o
C
-
-
1.5
V
I
R
V
R
= 1000V
-
-
100
A
V
R
= 1000V, T
C
= 150
o
C
-
-
500
A
t
rr
I
F
= 1A
-
-
85
ns
I
F
= 8A, dI
F
/dt = 200A/
s
-
-
100
ns
t
a
I
F
= 8A, dI
F
/dt = 200A/
s
-
50
-
ns
t
b
I
F
= 8A, dI
F
/dt = 200A/
s
-
30
-
ns
Q
RR
I
F
= 8A, dI
F
/dt = 200A/
s
-
500
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
30
-
pF
R
JC
-
-
2.0
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time at dI
F
/dt = 100A/
s (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current at dI
F
/dt = 100A/
s (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
2.5
V
F
, FORWARD VOLTAGE (V)
I
F
, FOR
W
ARD CURRENT (A)
1
40
0.5
10
0
0.5
1
1.5
25
o
C
100
o
C
175
o
C
3
V
R
, REVERSE VOLTAGE (V)
0
200
400
600
800
200
0.01
0.1
1
10
1000
0.001
25
o
C
100
o
C
175
o
C
I
R
, REVERSE CURRENT (
A)
MUR8100E, RURP8100
3
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
I
F
, FORWARD CURRENT (A)
0.5
0
80
20
8
1
40
60
t
,
RECO
VER
Y TIMES (ns)
4
t
b
100
t
rr
t
a
T
C
= 25
o
C, dI
F
/dt = 200A/
s
t
a
t
rr
t
b
25
50
75
t
,
RECO
VER
Y TIMES (ns)
I
F
, FORWARD CURRENT (A)
0
100
125
0.5
8
1
4
T
C
= 100
o
C, dI
F
/dt = 200A/
s
125
75
t
,
RECO
VER
Y TIMES (ns)
I
F
, FORWARD CURRENT (A)
0
t
a
50
150
t
rr
t
b
25
100
0.5
8
1
4
T
C
= 175
o
C, dI
F
/dt = 200A/
s
2
0
140
150
160
175
165
4
6
8
T
C
, CASE TEMPERATURE (
o
C)
I
F(A
V)
, A
VERA
GE FOR
W
ARD CURRENT (A)
155
DC
SQ. WAVE
170
145
V
R
, REVERSE VOLTAGE (V)
40
20
0
80
0
50
100
150
200
C
J
, JUNCTION CAP
A
CIT
ANCE (pF)
100
60
MUR8100E, RURP8100
4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 1A
L = 40mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
MUR8100E, RURP8100
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