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Электронный компонент: MWS5114-2

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160
TM
March 1997
MWS5114
1024-Word x 4-Bit
LSI Static RAM
Features
Fully Static Operation
Industry Standard 1024 x 4 Pinout (Same as Pinouts
for 6514, 2114, 9114, and 4045 Types)
Common Data Input and Output
Memory Retention for Standby Battery Voltage as Low
as 2V Min
All Inputs and Outputs Directly TTL Compatible
Three-State Outputs
Low Standby and Operating Power
Description
Pinout
MWS5114
(PDIP, SBDIP)
TOP VIEW
Ordering Information
200ns
250ns
300ns
TEMPERATURE RANGE
PACKAGE
PKG. NO.
MWS5114E3
MWS5114E2
MWS5114E2X
MWS5114E1
0
o
C to +70
o
C
PDIP
Burn-In
E18.3
E18.3
MWS5114D3
MWS5114D3X
MWS5114D2
MWS5114D1
0
o
C to +70
o
C
SBDIP
Burn-In
D18.3
D18.3
OPERATIONAL MODES
FUNCTION
CS
WE
DATA PINS
Read
0
1
Output: Dependent on data
Write
0
0
Input
Not Selected
1
X
High Impedance
10
11
12
13
14
15
16
17
18
9
8
7
6
5
4
3
2
1
V
DD
A8
A9
I/O1
I/O2
I/O3
I/O4
A7
WE
A6
A5
A4
A3
A0
A1
CS
A2
V
SS
File Number
1325.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2001. All Rights Reserved
6-161
Functional Block Diagram
MEMORY ARRAY
64 ROWS
64 COLUMNS
ROW
SELECT
INPUT
DATA
CONTROL
A
0
V
DD
A
4
A
5
A
6
A
7
A
8
A
9
I/O
1
I/O
2
I/O
3
I/O
4
CS
WE
ENABLE
COLUMN
I/O CIRCUITS
V
SS
COLUMN SELECT
A
1
A
2
A
3
MWS5114
6-162
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage Range, (V
DD
)
(All Voltages Referenced to V
SS
Terminal) . . . . . . . -0.5V to +7V
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to V
DD
+0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .
10mA
Thermal Resistance (Typical)
JA
(
o
C/W)
JC
(
o
C/W)
Plastic DIP Package . . . . . . . . . . . . . .
75
N/A
SBDIP Package. . . . . . . . . . . . . . . . . .
75
20
Operating Temperature Range (T
A
)
Package Type D . . . . . . . . . . . . . . . . . . . . . . . . .-55
o
C to +125
o
C
Package Type E . . . . . . . . . . . . . . . . . . . . . . . . . .-40
o
C to +85
o
C
Maximum Storage Temperature Range (T
STG
) . . .-65
o
C to +150
o
C
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Plastic Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150
o
C
Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . +265
o
C
Recommended Operating Conditions
At T
A
= Full Package Temperature Range. For maximum reliability, operating
conditions should be selected so that operation is always within the following ranges:
PARAMETER
LIMITS
UNITS
ALL TYPES
MIN
MAX
DC Operating Voltage Range
4.5
6.5
V
Input Voltage Range
V
SS
V
DD
V
Static Electrical Specifications
At T
A
= 0
o
C to +70
o
C, V
DD
=
5%, Except as Noted
PARAMETER
SYMBOL
CONDITIONS
LIMITS
UNITS
V
O
(V)
V
IN
(V)
V
DD
(V)
MWS5114-3
MWS5114-2
MWS5114-1
MIN
(NOTE 1)
TYP
MAX
MIN
(NOTE 1)
TYP
MAX
MIN
(NOTE 1)
TYP
MAX
Quiescent
Device
Current
IDD
-
0, 5
5
-
75
100
-
75
100
-
75
250
A
Output Low
(Sink) Current
I
OL
0.4
0, 5
5
2
4
-
2
4
-
2
4
-
mA
Output High
(Source)
Current
I
OH
4.6
0, 5
5
-0.4
-1
-
-0.4
-1
-
-0.4
-1
-
mA
Output Voltage
Low-Level
VOL
-
0, 5
5
-
0
0.1
-
0
0.1
-
0
0.1
V
Output Voltage
High-Level
VOH
-
0, 5
5
4.9
5
-
4.9
5
-
4.9
5
-
V
Input Low
Voltage
V
IL
0.5,
4.5
-
5
-
1.2
0.8
-
1.2
0.8
-
1.2
0.8
V
Input High
Voltage
V
IH
0.5,
4.5
-
5
2.4
-
-
2.4
-
-
2.4
-
-
V
Input Leakage
Current (Note 2)
IIN
-
0, 5
5
-
0.1
5
-
0.1
5
-
0.1
5
A
Operating
Current (Note 3)
IDD1
-
0, 5
5
-
4
8
-
4
8
-
4
8
mA
MWS5114
6-163
Three-State
Output Leakage
Current (Note 4)
I
OUT
0, 5
0, 5
5
-
0.5
5
-
0.5
5
-
0.5
5
A
Input
Capacitance
CI
N
-
-
-
-
5
7.5
-
5
7.5
-
5
7.5
pF
Output
Capacitance
C
OUT
-
-
-
-
10
15
-
10
15
-
10
15
pF
NOTES:
1. Typical values are for T
A
= 25
o
C and nominal V
DD
.
2. All inputs in parallel.
3. Outputs open circuited; cycle time = 1
s.
4. All outputs in parallel.
Static Electrical Specifications
At T
A
= 0
o
C to +70
o
C, V
DD
=
5%, Except as Noted (Continued)
PARAMETER
SYMBOL
CONDITIONS
LIMITS
UNITS
V
O
(V)
V
IN
(V)
V
DD
(V)
MWS5114-3
MWS5114-2
MWS5114-1
MIN
(NOTE 1)
TYP
MAX
MIN
(NOTE 1)
TYP
MAX
MIN
(NOTE 1)
TYP
MAX
MWS5114
6-164
Dynamic Electrical Specifications
at T
A
= 0
o
C to +70
o
C, V
DD
= 5V
5%, Input t
R
, t
F
= 10ns; C
L
= 50pF and 1 TTL Load
PARAMETER
SYMBOL
LIMITS
UNITS
MWS5114-3
MWS5114-2
MWS5114-1
(NOTE 1)
MIN
(NOTE 2)
TYP
MAX
(NOTE 1)
MIN
(NOTE 2)
TYP
MAX
(NOTE 1)
MIN
(NOTE 2)
TYP
MAX
READ CYCLE TIMES (FIGURE 1)
Read Cycle
tRC
200
160
-
250
200
-
300
250
-
ns
Access from
Address
tAA
-
160
200
-
200
250
-
250
300
ns
Chip Selection to
Output Valid
tCO
-
110
150
-
150
200
-
200
250
ns
Chip Selection to
Output Active
tCX
20
100
-
20
100
-
20
100
-
ns
Output Three-State
from Deselection
tOTD
-
75
125
-
75
125
-
75
125
ns
Output Hold from
Address Change
tOHA
50
100
-
50
100
-
50
100
-
ns
WRITE CYCLE TIMES (FIGURE 2)
Write Cycle
tWC
200
160
-
250
200
-
300
220
-
ns
Write
tW
125
100
-
150
120
-
200
140
-
ns
Write Release
tWR
50
40
-
50
40
-
50
40
-
ns
Address to Chip
Select Setup Time
tACS
0
0
-
0
0
-
0
0
-
ns
Address to Write
Setup Time
tAW
25
20
-
50
40
-
50
40
-
ns
Data to Write
Setup Time
tDSU
75
50
-
75
50
-
75
50
-
ns
Data Hold from
Write
tDH
30
10
-
30
10
-
30
10
-
ns
NOTES:
1. Time required by a limit device to allow for the indicated function.
2. Typical values are for T
A
= 25
o
C and nominal V
DD
.
MWS5114