8-101
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFETTM is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
RF1K49090
3.5A, 12V, 0.050 Ohm, Logic Level, Dual
N-Channel LittleFETTM Power MOSFET
This Dual N-Channel power MOSFET is manufactured using
an advanced MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. It is designed for use in applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and low voltage bus switches. This product
achieves full rated conduction at a gate bias in the 3V - 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
Formerly developmental type TA49090.
Features
3.5A, 12V
r
DS(ON)
= 0.050
Temperature Compensating PSPICE
Model
On-Resistance vs Gate Drive Voltage Curves
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49090
MS-012AA
RF1K49090
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e., RF1K4909096.
G1(2)
D1(8)
S1(1)
D1(7)
D2(6)
D2(5)
S2(3)
G2(4)
BRANDING DASH
1
2
3
4
5
Data Sheet
August 1999
File Number
3985.6
8-102
Absolute Maximum Ratings
T
A
= 25
o
C Unless Otherwise Specified
RF1K49090
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
12
V
Drain to Gate Voltage (R
GS
= 20k
, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
12
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
10
V
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
3.5
Refer to Peak Current Curve
A
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation
T
A
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
0.016
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V, (Figure 13)
12
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A, (Figure 12)
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 12V,
V
GS
= 0V
T
A
= 25
o
C
-
-
1
A
T
A
= 150
o
C
-
-
50
A
Gate to Source Leakage Current
I
GSS
V
GS
=
10V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 3.5A, V
GS
= 5V, (Figures 9, 11)
-
-
0.050
Turn-On Time
t
ON
V
DD
= 6V, I
D
3.5A,
R
L
= 1.71
, V
GS
= 5V,
R
GS
= 25
(Figure 10)
-
-
100
ns
Turn-On Delay Time
t
d(ON)
-
18
-
ns
Rise Time
t
r
-
60
-
ns
Turn-Off Delay Time
t
d(OFF)
-
50
-
ns
Fall Time
t
f
-
60
-
ns
Turn-Off Time
t
OFF
-
-
140
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 9.6V,
I
D
= 3.5A,
R
L
= 2.74
(Figure 15)
-
20
25
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
12
15
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
0.9
1.2
nC
Input Capacitance
C
ISS
V
DS
= 10V, V
GS
= 0V,
f = 1MHz (Figure 14)
-
750
-
pF
Output Capacitance
C
OSS
-
700
-
pF
Reverse Transfer Capacitance
C
RSS
-
275
-
pF
Thermal Resistance Junction-to-Ambient
R
JA
Pulse width = 1s
Device mounted on FR-4 material
-
-
62.5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Voltage
V
SD
I
SD
= 3.5A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 3.5A, dI
SD
/dt = 100A/
s
-
-
60
ns
RF1K49090
8-103
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
2.0
1.0
0.5
0
25
50
75
100
125
150
1.5
3.0
2.5
I
D
, DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (
o
C)
4.0
3.5
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-1
10
0
10
1
10
2
0.01
10
0.1
1
10
-2
10
3
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
Z
JA
, NORMALIZED
THERMAL IMPED
ANCE
SINGLE PULSE
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
0.01
1
100
10
0.1
0.1
I
D
, DRAIN CURRENT (A)
DC
5ms
100ms
1s
10ms
T
J
= MAX RATED, V
DSS
MAX = 12V
T
A
= 25
o
C
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
t, PULSE WIDTH (s)
200
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 5V
100
I
DM
, PEAK CURRENT CAP
ABILITY (A)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
T
A
= 25
o
C
RF1K49090
8-104
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
10
0.1
20
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R) ln [(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
5
10
15
0
1
2
3
4
5
V
GS
= 3V
20
25
V
GS
= 4V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 5V
V
GS
= 10V
V
GS
= 4.5V
PULSE DURATION = 80
s
T
A
= 25
o
C
DUTY CYCLE = 0.5% MAX
25
o
C
0
3.0
4.5
6.0
7.5
1.5
0
5
10
15
20
25
150
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 6V
I
D(ON)
, ON-ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
50
100
150
200
250
0
2.5
3.5
4.0
4.5
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(ON)
, ON-ST
A
TE RESIST
ANCE (m
)
I
D
= 0.5A
I
D
= 7.0A
3.0
I
D
= 1.75A
I
D
= 3.5A
PULSE DURATION = 80
s
V
DD
= 10V
DUTY CYCLE = 0.5% MAX
40
20
30
40
50
140
100
80
60
20
0
10
S
WIT
C
HIN
G
TIME
(
ns
)
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
DD
= 6V, I
D
= 3.5A, R
L
= 1.71
t
r
t
D(OFF)
t
f
t
D(ON)
120
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
s
ON RESIST
ANCE
V
GS
= 5V, I
D
= 3.5A
DUTY CYCLE = 0.5% MAX
RF1K49090
8-105
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
-80
-40
0
40
80
120
160
0
0.5
1.0
1.5
2.0
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
I
D
= 250
A
1200
900
300
0
0
2
4
6
8
10
C, CAP
A
CIT
ANCE (pF)
600
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
12
9
6
3
0
20
I
G REF
(
)
I
G ACT
(
)
-------------------------
t, TIME (
s)
80
I
G REF
(
)
I
G ACT
(
)
-------------------------
5.00
3.75
2.50
1.25
0.00
V
DD
= BV
DSS
V
DD
= BV
DSS
V
DS
, DRAIN-SOURCE V
O
L
T
A
GE (V)
V
GS
, GA
TE-SOURCE V
O
L
T
A
GE (V)
R
L
= 3.43
I
G(REF)
= 0.6mA
V
GS
= 5V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RF1K49090
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