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Электронный компонент: RF1K49223

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8-161
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFETTM is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RF1K49223
2.5A, 30V, 0.150 Ohm, Dual P-Channel
LittleFETTM Power MOSFET
The RF1K49223 Dual P-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from
integrated circuits.
Formerly developmental type TA49223.
Features
2.5A, 30V
r
DS(ON)
= 0.150
Temperature Compensating PSPICE
Model
Thermal Impedance PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49223
MS-012AA
RF1K49223
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e. RF1K4922396.
G1(2)
D1(8)
S1(1)
D1(7)
D2(6)
D2(5)
S2(3)
G2(4)
BRANDING DASH
1
2
3
4
5
Data Sheet
August 1999
File Number
4322.1
8-162
Absolute Maximum Ratings
T
A
= 25
o
C Unless Otherwise Specified
RF1K49223
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-30
V
Drain to Gate Voltage (R
GS
= 20k
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
2.5
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
0.016
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V, (Figure 12)
-30
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A, (Figure 11)
-1
-
-3
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30V,
V
GS
= 0V
T
A
= 25
o
C
-
-
-1
A
T
A
= 150
o
C
-
-
-50
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 2.5A,
(Figure 9, 10)
V
GS
= -10V
-
-
0.150
V
GS
= -4.5V
-
-
0.360
Turn-On Time
t
ON
V
DD
= -15V, I
D
2.5A,
R
L
= 6
, V
GS
= -10V,
R
GS
= 25
-
-
40
ns
Turn-On Delay Time
t
d(ON)
-
9
-
ns
Rise Time
t
r
-
19
-
ns
Turn-Off Delay Time
t
d(OFF)
-
60
-
ns
Fall Time
t
f
-
34
-
ns
Turn-Off Time
t
OFF
-
-
140
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to -20V
V
DD
= -24V,
I
D
2.5A,
R
L
= 9.6
I
g(REF)
= -1.0mA
(Figure 14)
-
28
35
nC
Gate Charge at -10V
Q
g(-10)
V
GS
= 0V to -10V
-
15
19
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to -2V
-
1.5
1.9
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
580
-
pF
Output Capacitance
C
OSS
-
260
-
pF
Reverse Transfer Capacitance
C
RSS
-
38
-
pF
Thermal Resistance Junction to Ambient
R
JA
Pulse Width = 1s
Device mounted on FR-4 material
-
-
62.5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= -2.5A
-
-
-1.25
V
Reverse Recovery Time
t
rr
I
SD
=-2.5A, dI
SD
/dt = 100A/
s
-
-
49
ns
RF1K49223
8-163
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
-1.5
-0.5
0
25
50
75
100
125
150
-1.0
-2.0
I
D
, DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (
o
C)
-3.0
-2.5
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
10
2
0.001
10
0.1
1
10
-2
10
3
Z
JA
, NORMALIZED
THERMAL IMPED
ANCE
0.01
10
-4
10
-3
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-1
-10
-100
-0.01
-1
-50
-10
-0.1
-0.1
I
D
, DRAIN CURRENT (A)
DC
5ms
100ms
1s
10ms
V
DSS(MAX)
= -30V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
A
= 25
o
C
t, PULSE WIDTH (s)
-100
-10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
DM
, PEAK CURRENT (A)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= -10V
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
T
A
= 25
o
C
V
GS
= -20V
RF1K49223
8-164
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
-10
0.1
-15
-1
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
-4
-8
-12
0
-1.5
-3.0
-4.5
-6.0
-7.5
-16
-20
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -6V
V
GS
= -10V
V
GS
= -20V
PULSE DURATION = 80
s
T
A
= 25
o
C
V
GS
= -5V
V
GS
= -4.5V
V
GS
= -8V
DUTY CYCLE = 0.5% MAX
V
GS
= -7V
0
-4
-6
-8
-10
-2
0
-4
-8
-12
-16
-20
I
D(ON)
, ON-ST
A
TE DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
150
o
C
V
DD
= -15V
-55
o
C
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
100
200
300
400
500
0
-6
-4
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(ON)
, DRAIN T
O
SOURCE
-2
-8
-10
I
D
= -0.625A
ON RESIST
ANCE (m
)
PULSE DURATION = 80
s
V
DD
= -15V
DUTY CYCLE = 0.5% MAX
I
D
= -1.25A
I
D
= -2.5A
I
D
= -5.0A
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
PULSE DURATION = 80
s
V
GS
= -10V, I
D
= -2.5A
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
0.4
0.6
0.8
1.0
1.2
NORMALIZED GA
TE
T
J
, JUNCTION TEMPERATURE (
o
C)
THRESHOLD V
O
L
T
A
G
E
V
GS
= V
DS
, I
D
= -250
A
RF1K49223
8-165
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
1.2
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
I
D
= -250
A
750
600
300
0
0
-5
-10
-15
-20
-25
C, CAP
A
CIT
ANCE (pF)
450
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
150
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
R
L
= 12
I
G(REF)
= -0.26mA
V
GS
= -10V
-30.0
-22.5
-15.0
-7.5
0
20
I
G REF
(
)
I
G ACT
(
)
----------------------
t, TIME (
s)
80
I
G REF
(
)
I
G ACT
(
)
----------------------
-10.0
-7.5
-5.0
-2.5
0
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DD
= BV
DSS
V
DD
= BV
DSS
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RF1K49223