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Электронный компонент: RFD15P05

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4-96
File Number
2387.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD15P05, RFD15P05SM, RFP15P05
15A, 50V, 0.150 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09833.
Features
15A, 50V
r
DS(ON)
= 0.150
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD15P05
TO-251AA
D15P05
RFD15P05SM
TO-252AA
D15P05
RFP15P05
TO-220AB
RFP15P05
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD15P05SM9A.
D
G
S
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
4-97
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD15P05, RFD15P05SM,
RFP15P05
UNITS
Drain Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-50
V
Drain Gate Voltage (R
G
= 20K
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-50
V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
-15
Refer to Peak Current Curve
A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
80
W
Derate above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.533
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 11)
-50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
-
-
-1
A
V
DS
= 0.8 x Rated BV
DSS,
T
C
= 150
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 15A, V
GS
= -10V (Figure 9)
-
-
0.150
Turn-On Time
t
ON
V
DD
= -25V, I
D
7.5A, R
G
= 12.5
,
R
L
= 3.3
, V
GS
= -10V
(Figures 16, 17)
-
-
60
ns
Turn-On Delay Time
t
D(ON)
-
16
-
ns
Rise Time
t
R
-
30
-
ns
Turn-Off Delay Time
t
D(OFF)
-
50
-
ns
Fall Time
t
F
-
20
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
Total Gate Charge
Q
G(TOT)
V
GS
= 0V to -20V
V
DD
= -40V, I
D
= 15A,
R
L
= 2.67
,
I
G(REF)
= -0.65mA
(Figures 18, 19)
-
-
150
nC
Gate Charge at -10V
Q
G(-10)
V
GS
= 0V to -10V
-
-
75
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 0V to -2V
-
-
3.5
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V
f = 1MHz (Figure 12)
-
1150
-
pF
Output Capacitance
C
OSS
-
300
-
pF
Reverse Transfer Capacitance
C
RSS
-
56
-
pF
Thermal Resistance Junction to Case
R
JC
TO-220AB, TO-251AA, TO-252AA
-
-
1.875
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-251AA, TO-252AA
-
-
100
o
C/W
TO-220AB
-
-
62.5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= -15A
-
-
-1.5
V
Reverse Recovery Time
t
RR
I
SD
= -15A, dI
SD
/dt = -100A/
s
-
-
125
ns
NOTES:
2. Pulse test: pulse duration
300ms, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFD15P05, RFD15P05SM, RFP15P05
4-98
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-4
-8
0
25
50
75
100
125
150
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
-12
-16
175
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.01
0.1
1
2
THERMAL IMPED
ANCE
Z
JC
,
NORMALIZED TRANSIENT
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
-100
-10
-1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
s
1ms
100ms
DC
10ms
T
C
= 25
o
C
T
J
= MAX RATED
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-100
t, PULSE WIDTH (s)
I
DM
,
PEAK CURRENT CAP
ABILITY (A)
V
GS
= -20V
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-10
-200
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I
25
175
T
C
150
----------------------
=
T
C
= 25
o
C
RFD15P05, RFD15P05SM, RFP15P05
4-99
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
-10
-50
-1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
I
AS
,
A
V
ALANCHE CURRENT (A)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
If R
0
0
0
-1.5
-3.0
-4.5
-6.0
-7.5
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
-10
-20
-40
V
GS
= -4.5V
V
GS
= -20V
-30
PULSE DURATION = 80
s
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
0
V
DD
= -15V
PULSE DURATION = 250
s
-55
o
C
175
o
C
25
o
C
-8
-16
-32
-24
-40
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
2.5
200
ON RESIST
ANCE
PULSE DURATION = 80
s
V
GS
= -10V, I
D
= -15A
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED GA
TE
200
THRESHOLD V
O
L
T
A
GE
V
GS
= V
DS
I
D
= -250
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
I
D
= -250
A
RFD15P05, RFD15P05SM, RFP15P05
4-100
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
1400
1000
800
400
0
0
-5
-10
-15
-20
-25
C
,
CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
200
600
1200
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
-50
-37.5
-25
-12.5
0
-10.0
-7.5
-5.0
-2.5
0.0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (ms)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 3.33
I
G(REF)
= -0.65mA
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
= -10V
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
10%
0
0
RFD15P05, RFD15P05SM, RFP15P05