4-112
File Number
2384.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RFD8P05, RFD8P05SM, RFP8P05
8A, 50V, 0.300 Ohm, P-Channel Power
MOSFETs
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09832.
Features
8A, 50V
r
DS(ON)
= 0.300
UIS SOA Rating Curve
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD8P05
TO-251AA
D8P05
RFD8P05SM
TO-252AA
D8P05
RFP8P05
TO-220AB
RFP8P05
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.,
RFD8P05SM9A.
D
G
S
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN (FLANGE)
GATE
DRAIN
GATE
SOURCE
DRAIN (FLANGE)
Data Sheet
July 1999
4-113
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specified
RFD8P05,
RFD8P05SM, RFP8P05
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-50
V
Drain to Gate Voltage (R
GS
= 20K
)
(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
-50
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
-8
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
-20
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
48
W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.27
W/
o
C
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
See Figure 6
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 9)
-50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 8)
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
A
V
DS
= 0.8 x Rated BV
DSS
, T
J
= 150
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 8A, V
GS
= -10V (Figure 7)
-
-
0.300
Turn-On Time
t
ON
V
DD
= -25V, I
D
4A, R
G
= 9.1
, R
L
= 6.25
,
V
GS
= -10V
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
16
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
42
-
ns
Fall Time
t
f
-
20
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0 to -20V
V
DD
= -40V, I
D
= 8A,R
L
= 5
,
I
G(REF)
= -0.3mA
-
-
80
nC
Gate Charge at -5V
Q
g(-10)
V
GS
= 0 to -10V
-
-
40
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0 to -2V
-
-
2
nC
Thermal Resistance Junction to Case
R
JC
-
-
3.125
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-251AA, TO-252AA
-
-
100
o
C/W
TO-220AB
62.5
o
C/W
Source to Drain Diode Specifications
T
C
= 25
o
C Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -8A
-
-
-1.5
V
Reverse Recovery Time
t
rr
I
SD
= -8A, dI
SD
/dt = 100A/
s
-
-
125
ns
NOTE:
2. Pulse test: pulse width
300
s, Duty Cycle
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFD8P05, RFD8P05SM, RFP8P05
4-114
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-4
-2
0
25
50
75
100
125
150
-8
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
-10
-6
175
10
1
0.1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
T
C
= 25
o
C
DC OPERATION
T
J
= 175
o
C
OPERATION IN THIS
AREA IS LIMITED BY r
DS(ON)
100
10
1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
I
AS
,
A
V
ALANCHE CURRENT (A)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
DM
0
0
-2
-4
-6
-10
-8
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -6V
V
GS
= -10V
-8
V
GS
= -7V
V
GS
= -5V
V
GS
= -8V
-20
-12
-16
-4
PULSE DURATION = 80
s
T
C
= 25
o
C
V
GS
= -9V
V
GS
= -4V
DUTY CYCLE = 0.5% MAX
0
-6
-9
-12
-15
-3
0
8
175
o
C
PULSE DURATION = 80
s
V
DD
= 15V
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
20
16
12
4
DUTY CYCLE = 0.5% MAX
RFD8P05, RFD8P05SM, RFP8P05
4-115
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
NORMALIZED ON RESIST
ANCE
3.0
1.0
0.5
0
0
50
T
J
, JUNCTION TEMPERATURE (
o
C)
150
1.5
100
2.0
2.5
200
-50
PULSE DURATION = 80
s
V
GS
= -10V, I
D
= -8A
DUTY CYCLE =0.5% MAX
-50
50
0
100
150
1.50
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= -250
A
1.25
1.00
0.75
0.50
0.25
0
NORMALIZED DRAIN T
O
SOURCE
2.0
1.0
0.5
0
0
50
T
J
, JUNCTION TEMPERATURE (
o
C)
100
1.5
BREAKDO
WN V
O
L
T
A
GE
150
200
I
D
= -250
A
-50
800
600
400
200
0
0
-5
-10
-15
-20
C
,
CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
-25
C
ISS
C
RSS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
-10
-8
-6
-4
-2
0
-12.5
-25
-37.5
-50
0
TIME (
s)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
G
E
(V)
V
DD
= BV
DSS
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
GATE
SOURCE
VOLTAGE
R
L
= 6.25
I
G(REF)
= 0.3mA
V
GS
= 10V
V
DD
= BV
DSS
DRAIN TO SOURCE
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
VOLTAGE
RFD8P05, RFD8P05SM, RFP8P05
4-116
Test Circuits and Waveforms
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
FIGURE 14. SWITCHING TIME TEST CIRCUIT
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
10%
0
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
V
GS
= -1V
Q
g(-5)
V
GS
= -5V
Q
g(TOT)
V
GS
= -10V
V
DS
-V
GS
I
g(REF)
0
0
RFD8P05, RFD8P05SM, RFP8P05
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