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Электронный компонент: RFG30P05

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4-126
File Number
2436.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG30P05, RFP30P05, RF1S30P05SM
30A, 50V, 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be
operated directly from integrated circuits.
Formerly developmental type TA09834.
Features
30A, 50V
r
DS(ON)
= 0.065
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG30P05
TO-247
RFG30P05
RFP30P05
TO-220AB
RFP30P05
RF1S30P05SM
TO-263AB
F1S30P05
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e., RF1S30P05SM9A.
D
G
S
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
4-127
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG30P05, RFP30P05
RF1S30P05SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-50
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-50
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
30
Refer to Peak Current Curve
A
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
0.8
W
W/
o
C
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
-50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
-1
A
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
-
-
-25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 30A, V
GS
= -10V (Figure 9)
-
-
0.065
Turn-On Time
t
(ON)
V
DD
= -25V, I
D
= 15A,
R
L
= 1.67
, V
GS
= -10V,
R
G
= 6.25
(Figure 13)
-
-
80
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
23
-
ns
Turn-Off Delay Time
t
d(OFF)
-
28
-
ns
Fall Time
t
f
-
18
-
ns
Turn-Off Time
t
(OFF)
-
-
100
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0 to -20V
V
DD
= -40V,
I
D
= 30A, R
L
= 1.33
,
I
G(REF)
= 1.6mA
-
140
170
nC
Gate Charge at -10V
Q
g(-10)
V
GS
= 0 to -10V
-
70
85
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0 to -2V
-
5.5
6.6
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V
f = 1MHz
(Figure 12)
-
3200
-
pF
Output Capacitance
C
OSS
-
800
-
pF
Reverse Transfer Capacitance
C
RSS
-
175
-
pF
Thermal Resistance, Junction to Case
R
JC
-
-
1.25
o
C/W
Thermal Resistance, Junction to Ambient
R
JA
TO-220, TO-263
-
-
62
o
C/W
TO-247
-
-
30
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -30A
-
-
-1.5
V
Reverse Recovery Time
t
rr
I
SD
= -30A, dI
SD
/dt = -100A/
s
-
-
150
ns
NOTES:
2. Pulsed: pulse duration = 300
s max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFG30P05, RFP30P05, RF1S30P05SM
4-128
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
-20
-10
0
25
50
75
100
125
150
175
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
-30
-40
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
THERMAL IMPED
ANCE
Z
JC
, NORMALIZED
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
-200
-100
-10
-1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
100ms
10ms
1ms
100
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS
MAX = -50V
DC
T
C
= 25
o
C
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-100
t, PULSE WIDTH (s)
I
DM
,
PEAK CURRENT (A)
V
GS
= -10V
-10
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I
25
175
T
C
150
---------------------
=
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-500
V
GS
= -20V
T
C
= 25
o
C
RFG30P05, RFP30P05, RF1S30P05SM
4-129
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
-100
-10
-1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
I
AS
,
A
V
ALANCHE CURRENT (A)
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
GS
= -5V
V
GS
= -6V
V
GS
= -7V
0
0
-2
-4
-6
-8
-10
I
D,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-30
-45
-60
-75
V
GS
= -20V
V
GS
= -10V
V
GS
= -8V
-15
V
GS
= -4.5V
PULSE DURATION = 80
s
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
0
-2
-4
-6
-8
-10
0
-30
-45
-75
-60
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
-15
V
DD
= -15V
-55
o
C
25
o
C
175
o
C
2
1.5
1
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
0.5
PULSE DURATION = 80
s
V
GS
= -10V, I
D
= 30A
200
ON RESIST
ANCE
DUTY CYCLE = 0.5% MAX
2
1.5
1
0.5
0
-80
-40
0
40
80
160
120
200
THRESHOLD V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED GA
TE
V
GS
= V
DS
, I
D
=-250
A
2
1.5
1
0.5
0
-80
-40
0
40
80
120
160
200
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
T
J,
JUNCTION TEMPERATURE (
o
C)
I
D
= 250
A
RFG30P05, RFP30P05, RF1S30P05SM
4-130
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
3000
2000
1000
0
0
-5
-10
-15
-20
-25
C
,
CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4000
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
-50
-37.5
-25
-12.5
0
DRAIN SOURCE VOLTAGE
-10
-7.5
-5
-2.5
0
GATE
SOURCE
VOLTAGE
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
s)
R
L
= 1.67
I
G(REF)
= 1.6mA
V
GS
= -10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
10%
0
0
RFG30P05, RFP30P05, RF1S30P05SM