Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
RFH10N45, RFH10N50
10A, 450V and 500V, 0.600 Ohm,
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17435.
Features
10A, 450V and 500V
r
DS(ON)
= 0.600
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-218AC
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFH10N45
TO-218AC
RFH10N45
RFH10N50
TO-218AC
RFH10N50
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
DRAIN
GATE
(FLANGE)
Data Sheet
October 1998
File Number
1629.2
[ /Title
(RFH10
N45,
RFH10N
50)
/Subject
(10A,
450V
and
500V,
0.600
Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor,
N-Chan-
nel
Power
MOS-
FETs,
TO-
218AC)
/Creator
()
/DOCIN
FO pdf-
mark
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFH10N45
RFH10N50
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
450
500
V
Drain to Gate Voltage (R
GS
= 1M
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . V
DGR
450
500
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
10
10
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
20
20
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150
150
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
1.2
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
RFH10N45
450
V
RFH10N50
500
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 8)
2
-
4
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
-
-
1
A
V
DS
= 0.8 x Rated BV
DSS,
TC = 125
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V, V
DS
= 0V
-
-
100
nA
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 10A, V
GS
= 10V
-
-
6.0
V
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 10A, V
GS
= 10V (Figures 6, 7)
-
-
0.600
Turn-On Delay Time
t
d(ON)
I
D
5A, V
DS
= 250V, R
G
=
50
,
R
L
=
50
, V
GS
= 10V
(Figures 10, 11, 12)
-
26
60
ns
Rise Time
t
r
-
50
100
ns
Turn-Off Delay Time
t
d(OFF)
-
525
900
ns
Fall Time
t
f
-
105
180
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V
f = 1MHz (Figure 9)
-
-
3000
pF
Output Capacitance
C
OSS
-
-
600
pF
Reverse Transfer Capacitance
C
RSS
-
-
200
pF
Thermal Resistance, Junction to Case
R
JC
-
-
0.83
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 10A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 10A, dI
SD
/dt = 100A/
s
-
950
-
ns
NOTES:
2. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFH10N45, RFH10N50S
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
12
11
10
9
8
7
6
5
4
3
2
1
0
100
10
1
0.1
1
10
100
1000
I
D
, DRAIN CURRENT (A)
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
V
DS
, DRAIN TO SOURCE (V)
T
C
= 25
o
C
DC
V
DS(MAX)
= 450V
RFH10N45
V
DS(MAX)
= 500V
RFH10N50
I
D
MAX CONTINUOUS
T
J
= MAX RATED
20
12
8
0
8
10
12
14
I
D,
DRAIN CURRENT (A)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
24
6
PULSE DURATION = 80
s
DUTY CYCLE
2%
V
GS
= 6V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 10V, 8V
V
GS
= 3.5V
V
GS
= 5V
4
2
16
4
V
GS
= 3V
I
DS(ON),
DRAIN T
O
SOURCE CURRENT (A)
16
4
0
1
2
3
4
5
V
GS,
GATE TO SOURCE VOLTAGE (V)
12
8
0
20
24
V
DS
= 25V
PULSE DURATION = 80
s
-40
o
C
25
o
C
125
o
C
6
7
r
DS(ON),
DRAIN T
O
SOURCE ON
I
D,
DRAIN CURRENT (A)
1.2
1.0
0.8
0.6
0
0
4
8
12
24
28
RESIST
ANCE (
)
V
GS
= 10V
PULSE DURATION = 80
s
125
o
C
25
o
C
-40
o
C
0.4
0.2
16
20
RFH10N45, RFH10N50
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE TO THRESHOLD VOLTAGE
vs JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Applications Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
2.5
2.0
0.5
-50
0
50
100
150
T
J,
JUNCTION TEMPERATURE (
o
C)
V
GS
= 10V
I
D
= 10A
NORMALIZED DRAIN T
O
SOURCE
3.0
ON RESIST
ANCE
1.0
1.5
1.2
1.0
-50
0
50
100
T
J,
JUNCTION TEMPERATURE (
o
C)
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
GE
1.4
0.9
0.8
0.7
0.6
1.1
1.3
150
I
D
= 250
A
0
10
20
30
40
50
C, CAP
A
CIT
ANCE (
P
F)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
2000
1000
0
C
OSS
3000
C
ISS
4000
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
0.75BV
DSS
0.25BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
I
G
(REF)
I
G
(ACT)
20
80
DRAIN SOURCE VOLTAGE
I
G
(REF)
I
G
(ACT)
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
t, TIME (
s)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
500
375
250
125
0
10
8
6
4
0
2
0.50BV
DSS
GATE
SOURCE
VOLTAGE
R
L
= 50
I
G
(REF) = 2.1mA
V
GS
= 10V
0.75BV
DSS
0.25BV
DSS
0.50BV
DSS
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFH10N45, RFH10N50
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