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Электронный компонент: RFP18N10

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5-1
Semiconductor
September 1998
RFM18N08, RFM18N10,
RFP18N08, RFP18N10
18A, 80V and 100V, 0.100 Ohm,
N-Channel Power MOSFETs
Features
18A, 80V and 100V
r
DS(ON)
= 0.100
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA17421.
Symbol
Packaging
JEDEC TO-204AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM18N08
TO-204AA
RFM18N08
RFM18N10
TO-204AA
RFM18N10
RFP18N08
TO-220AB
RFP18N08
RFP18N10
TO-220AB
RFP18N10
NOTE: When ordering, use the entire part number.
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1998
File Number
1446.1
[ /Title
(RFM18
N08,
RFM18
N10,
RFP18N
08,
RFP18N
10)
/Subject
(18A,
80V and
100V,
0.1 Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
/DOCIN
FO pdf-
mark
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFM18N08
RFM18N10
RFP18N08
RFP18N10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
80
100
80
100
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . V
DGR
80
100
80
100
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
18
45
18
45
18
45
18
45
A
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
20
20
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
0.8
100
0.8
75
0.6
75
0.6
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 150
-55 to 150
-55 to 150
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . T
pkg
300
260
300
260
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
RFM18N08, RFP18N08
80
-
-
V
RFM18N10, RFP18N10
100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A, (Figure 8)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V, V
DS
= 0V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 18A, V
GS
= 10V, (Figures 6, 7)
-
-
0.100
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 18A, V
GS
= 10V
-
-
1.8
V
Turn-On Delay Time
t
d(ON)
V
DD
= 50V, I
D
9A, R
G
= 50
, V
GS
= 10V,
R
L
= 5.5
(Figures 10, 11, 12)
-
60
90
ns
Rise Time
t
r
-
300
450
ns
Turn-Off Delay Time
t
d(OFF)
-
150
225
ns
Fall Time
t
f
-
150
225
ns
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz,
(Figure 9)
-
-
1700
pF
Output Capacitance
C
OSS
-
-
750
pF
Reverse-Transfer Capacitance
C
RSS
-
-
300
pF
Thermal Resistance Junction to Case
R
JC
RFM18N08, RFM18N10
-
-
1.25
o
C/W
RFP18N08, RFP18N10
-
-
1.67
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 9A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
s
-
150
-
ns
NOTES:
2. Pulse test: width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFM18N08, RFM18N10, RFP18N08, RFP18N10
5-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
DRAIN CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
20
18
16
14
12
10
8
6
4
2
0
RFP18N08,
RFP18N10
RFM18N08,
RFM18N10
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0.1
I
D
, DRAIN CURRENT
T
C
= 25
o
C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
OPERATION IN
THIS AREA MAY BE
LIMITED BY r
DS(ON)
DC OPERA
TION
T
J
= MAX RATED
0
1
2
3
4
5
6
7
35
30
25
20
15
10
5
0
V
DS
, DRAIN TO SOURCE (V)
I
D
, DRAIN CURRENT (A)
V
G
= 8V
8
V
G
= 7V
V
G
= 6V
V
G
= 5V
V
G
= 4V
V
G
= 10V
V
G
= 20V
PULSE DURATION = 80
s
DUTY CYCLE
2%
T
C
= 25
o
C
0
2
3
4
1
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
40
35
30
25
20
15
10
5
0
V
DS
= 10V
PULSE DURATION = 80
s
DUTY CYCLE
2%
T
C
= 25
o
C
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT
125
o
C
125
o
C
-40
o
C
25
o
C
-40
o
C
0
10
20
30
35
5
15
25
I
D
, DRAIN CURRENT (A)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
r
DS(ON)
, DRAIN T
O
SOURCE
ON RESIST
ANCE (
)
PULSE DURATION = 80
s
DUTY CYCLE
2%
T
C
= 25
o
C
125
o
C
25
o
C
-40
o
C
V
GS
= 10V
RFM18N08, RFM18N10, RFP18N08, RFP18N10
5-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
I
D
= 18A
V
GS
= 10V
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0
1.5
1.0
0.5
0
NORMALIZED DRAIN T
O
SOURCE
ON RESIST
ANCE
PULSE DURATION = 80
s
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
1
0.8
0.6
1.2
1.4
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
GE
V
GS
= V
DS
I
D
= 250
A
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2400
2000
1600
1200
800
400
0
C, CAP
A
CIT
ANCE (pF)
C
RSS
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
DD
= BV
DSS
100
75
50
25
0
10
8
6
4
2
0
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
0.75BV
DSS
0.25BV
DSS
0.50BV
DSS
DRAIN SOURCE VOLTAGE
GATE
SOURCE
VOLTAGE
V
DD
= BV
DSS
R
L
= 5.56
I
G(REF)
= 1mA
V
GS
= 10V
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
s)
RFM18N08, RFM18N10, RFP18N08, RFP18N10
5-5
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
FIGURE 13. GATE CHARGE TEST CIRCUIT
FIGURE 14. GATE CHARGE WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
0.3
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
G(REF)
0
(ISOLATED
V
DS
0.2
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
I
G
CURRENT
SAMPLING
SUPPLY)
RESISTOR
RESISTOR
SAME TYPE
AS DUT
Q
g(TOT)
Q
gd
Q
gs
V
DS
0
V
GS
V
DD
I
G(REF)
0
RFM18N08, RFM18N10, RFP18N08, RFP18N10