5-1
Semiconductor
Features
2A, 80V and 100V
r
DS(ON)
1.05
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Description
These are N-channel enhancement mode silicon gate power
field effect transistors designed for applications such as
switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09282.
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N08
TO-220AB
RFP2N08
RFP2N10
TO-220AB
RFP2N10
NOTE: When ordering, use entire part number.
D
G
S
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
July 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
Harris Corporation 1998
RFP2N08,
RFP2N10
2A, 80V and 100V, 1.05 Ohm,
N-Channel Power MOSFETs
File Number
2883.1
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP2N08
RFP2N10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
80
100
V
Drain to Gate Voltage (R
GS
= 1M
) (Note 1). . . . . . . . . . . . . . . . . . . . . . V
DGR
80
100
V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
2
2
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
5
5
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
25
25
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.2
0.2
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
ID = 250
A, VGS = 0
RFP2N10
100
-
-
V
RFP2N08
80
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 8)
2
-
4
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, T
C
= 25
o
C
-
-
1
A
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 125
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V, V
DS
= 0
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 2A, V
GS
= 10V (Figures 6, 7)
-
-
1.05
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 2A, V
GS
= 10V
-
-
2.1
V
Turn-On Delay Time
t
d(ON)
I
D
1A, V
DD
= 50V, R
G
= 50
,
R
L
= 25
, V
GS
= 10V
(Figures 10, 11, 12)
-
17
25
ns
Rise Time
t
r
-
30
45
ns
Turn-Off Delay Time
t
d(OFF)
-
30
45
ns
Fall Time
t
f
-
17
25
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f =1MHz
(Figure 9)
-
-
200
pF
Output Capacitance
C
OSS
-
-
80
pF
Reverse-Transfer Capacitance
C
RSS
-
-
25
pF
Thermal Resistance Junction to Case
R
JC
-
-
5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 2A
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 2A, dI
SD
/dt = 50A/
s
-
100
-
ns
NOTES:
2. Pulse test: pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP2N08, RFP2N10
5-3
Typical Performance Curves
Unless otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
T
C,
CASE TEMPERATURE (
o
C)
1.2
PO
WER DISSIP
A
TION MUL
TIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
RFP2N08
RFP2N010
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
0.10
0.01
1
10
100
1000
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
T
J
= MAX RATED
T
C
= 25
o
C
PULSE DURATION = 80
s
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
2.5
2.0
1A
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 9V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
1.5
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 125
o
C
2.0
2.5
1.0
0.5
I
D
S(ON)
, DRAIN T
O
SOURCE CURRENT (A)
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
= 10V
PULSE DURATION = 250
s
T
C
= 25
o
C
T
C
= 40
o
C
T
C
= 125
o
C
10
T
C
= 125
o
C
V
GS
= 10V
PULSE DURATION = 250
s
T
C
= 25
o
C
T
C
= -40
o
C
0
0.5
1.0
1.5
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, DRAIN CURRENT (A)
r
DS(ON)
, DRAIN T
O
SOURCE ON
RESIST
ANCE (
)
RFP2N08, RFP2N10
5-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless otherwise Specified (Continued)
NORMALIZED DRAIN T
O
SOURCE
2.0
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
1.5
1.0
0.5
0
-50
0
50
100
150
200
I
D
= 2A, V
GS
= 10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
A
NORMALIZED GA
TE THRESHOLD
VO
L
T
AG
E
240
200
160
120
80
40
0
10
20
30
40
50
60
70
C, CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
0
100
75
50
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
25
0
I
G(REF)
TIME (
s)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
6
8
10
4
2
0
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
GATE
SOURCE
VOLTAGE
0.75 V
DSS
0.50 V
DSS
0.25 V
DSS
V
DSS
= V
DSS
R
L
= 50
I
G(REF)
= 0.095mA
V
GS
= 10V
0.75 V
DSS
0.50 V
DSS
0.25 V
DSS
BV
DSS
V
DDD =
V
DSS
TO
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP2N08, RFP2N10
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