6-267
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP42N03L, RF1S42N03LSM
42A, 30V, 0.025 Ohm, Logic Level,
N-Channel Power MOSFET
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49030.
Features
42A, 30V
r
DS(ON)
= 0.025
Temperature Compensating PSPICE
Model
Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP42N03L
TO-220AB
FP42N03L
RF1S42N03LSM
TO-263AB
F42N03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g., RF1S42N03LSM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-263AB
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
4302.2
6-268
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP42N03L, RF1S42N03LSM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
30
V
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
10
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
42
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
0.606
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V
30
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 150
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
10V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 42A, V
GS
= 5V (Figure 11)
-
-
0.025
Turn-On Time
t
ON
V
DD
= 15V, I
D
42A, R
L
= 0.357
,
V
GS
= 5V, R
GS
= 5
(Figures 10, 18, 19)
-
-
260
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
160
-
ns
Turn-Off Delay Time
t
d(OFF)
-
20
-
ns
Fall Time
t
f
-
20
-
ns
Turn-Off Time
t
OFF
-
-
60
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 24V, I
D
42A,
R
L
= 0.571
I
G(REF)
= 0.6mA
(Figures 15, 20, 21)
-
50
60
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
30
36
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
1.5
1.8
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 14)
-
1650
-
pF
Output Capacitance
C
OSS
-
575
-
pF
Reverse Transfer Capacitance
C
RSS
-
200
-
pF
Thermal Resistance Junction-to-Case
R
JC
-
-
1.65
o
C/W
Thermal Resistance Junction-to-Ambient
R
JA
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 42A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 42A, dI
SD
/dt = 100A/
s
-
-
125
ns
NOTES:
2. Pulse test: pulse width
300
s, duty cycle
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFP42N03L, RF1S42N03LSM
6-269
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
10
0
25
50
75
100
125
150
40
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
50
175
30
t, RECTANGULAR PULSE DURATION (s)
10
1
Z
JC
, NORMALIZED
THERMAL IMPED
ANCE
10
-3
10
-2
10
-1
10
0
1
10
-5
10
-4
2
0.01
0.1
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.01
0.02
0.05
0.1
0.2
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
50
1
500
10
1
I
D
, DRAIN CURRENT (A)
DC
100
s
100ms
1ms
10ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
T
C
= 25
o
C, T
J
= 175
o
C
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
DM
, PEAK CURRENT CAP
ABILITY (A)
500
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 10V
RFP42N03L, RF1S42N03LSM
6-270
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
0.01
0.1
10
10
0.001
200
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
100
1
100
0
25
0
1
2
3
5
50
75
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4V
V
GS
= 10V
100
4
V
GS
= 3V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 80
s
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
3.0
4.5
6.0
7.5
1.5
0
25
50
75
175
o
C
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
-55
o
C
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
0
25
50
75
3.0
3.5
4.0
4.5
r
DS(ON)
,
DRAIN T
O
SOURCE
V
GS
, GATE TO SOURCE VOLTAGE (V)
5.0
100
I
D
= 2A
I
D
= 30A
I
D
= 15A
I
D
= 42A
2.5
PULSE DURATION = 80
s
ON RESIST
ANCE (m
)
DUTY CYCLE = 0.5% MAX
0
150
200
250
300
0
10
20
30
40
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
)
50
350
100
50
t
r
t
f
t
d(OFF)
t
d(ON)
V
DD
= 15V, I
D
= 42A, R
L
= 0.357
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
PULSE DURATION = 80
s
ON RESIST
ANCE
V
GS
= 5V, I
D
= 42A
DUTY CYCLE = 0.5% MAX
RFP42N03L, RF1S42N03LSM
6-271
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
-80
-40
0
40
80
120
160
0
0.5
1.0
1.5
2.0
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= 250
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
GE
200
I
D
= 250
A
2500
500
0
0
5
10
15
20
25
C, CAP
A
CIT
ANCE (pF)
1500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
2000
1000
V
GS
= 0V, f = 0.1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
24
18
12
6
0
20
I
G REF
(
)
I
G ACT
(
)
----------------------
t, TIME (
s)
80
I
G REF
(
)
I
G ACT
(
)
----------------------
5
3
2
1
0
V
DD
= BV
DSS
V
DD
= BV
DSS
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
R
L
= 0.714
I
G(REF)
= 0.6mA
V
GS
= 5V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
30
4
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RFP42N03L, RF1S42N03LSM
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