ChipFind - документация

Электронный компонент: RFP4N40

Скачать:  PDF   ZIP
Semiconductor
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998
RFM4N35, RFM4N40, RFP4N35, RFP4N40
4A, 350V and 400V, 2.000 Ohm, N-Channel
Power MOSFETs
These are N-channel enhancement-mode silicon-gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17404.
Features
4A, 350V and 400V
r
DS(ON)
= 2.000
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-204AA
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM4N35
TO-204AA
RFM4N35
RFM4N40
TO-204AA
RFM4N40
RFP4N35
TO-220AB
RFP4N35
RFP4N40
TO-220AB
RFP4N40
NOTE: When ordering, use the entire part number.
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
Data Sheet
October 1998
File Number
1491.3
[ /Title
()
/Sub-
ject ()
/Autho
r ()
/Key-
words
()
/Cre-
ator ()
/DOCI
NFO
pdf-
mark
[
/Page-
Mode
/Use-
Out-
lines
/DOC-
VIEW
pdf-
mark
[ /Title
(RFM4N
35,
RFM4N
40,
RFP4N3
5,
RFP4N4
0)
/Subject
(4A,
350V
and
400V,
2.000
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
2
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specified
RFM4N35
RFM4N40
RFP4N35
RFP4N40
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
350
400
350
400
V
Drain to Gate Voltage (R
GS
= 1M
)
(Note 1) . . . . . . . . . . . . . . . V
DGR
350
400
350
400
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
4
4
4
4
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
8
8
8
8
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
20
20
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
75
75
60
60
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
0.6
0.48
0.48
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
-55 to 150
-55 to 150
-55 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . .T
pkg
300
260
300
260
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0
RFM4N40, RFP4N40
400
-
-
V
RFM4N35, RFP4N35
350
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 8)
2
-
4
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
-
-
1
A
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 125
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V, V
DS
= 0
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 4A, V
GS
= 10V (Figures 6, 7)
-
-
2.000
Drain to Source On-Voltage (Note 2)
V
DS(ON)
I
D
= 4A, V
GS
= 10V
-
-
8
V
Turn-On Delay Time
t
D(ON)
V
DD
= 200V, I
D
= 2A, R
G
= 50
R
L
= 100
, V
GS
= 10V
(Figures 10, 11, 12)
-
12
45
ns
Rise Time
t
r
-
42
60
ns
Turn-Off Delay Time
t
D(OFF)
-
130
200
ns
Fall Time
t
f
-
62
100
ns
Input Capacitance
C
ISS
V
DS
= 25V,
V
GS
= 0V
f = 1MHz (Figure 9)
-
-
750
pF
Output Capacitance
C
OSS
-
-
150
pF
Reverse-Transfer Capacitance
C
RSS
-
-
100
pF
Thermal Resistance Junction to Case
R
JC
RFM4N35, RFM4N40
-
-
1.67
o
C/W
RFP4N35, RFP4N40
-
-
2.083
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 2A
-
-
1.4
V
Reverse Recorvery Time
t
rr
I
SD
= 4A, dI
SD
/dt = 100A/
s
-
800
-
ns
NOTES:
2. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFM4N35, RFM4N40, RFP4N35, RFP4N40
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
5
3
2
1
4
RFM4N35, RFM4N40
RFP4N35, RFP4N40
RFM4N35, RFP4N35
RFM4N40, RFP4N40
10
1
0.1
1
10
100
1000
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
O
C
V
DS
, DRAIN TO SOURCE VOLTAGE
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
RFM4N35, 40
RFP4N35, 40
0
5
10
15
20
25
7
6
5
4
3
2
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 20 V
V
GS
= 8 - 10V
V
GS
= 7V
V
GS
= 6V
V
GS
= 4V
V
GS
= 5V
TC = 25
o
C
80
s PULSE TEST
DUTY CYCLE
2%
0
2
4
6
8
10
6
5
4
3
2
1
8
7
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
C
= -40
o
C
0
V
DS
= 20V
PULSE DURATION = 80
s
DUTY CYCLE
2%
T
C
= 125
o
C
4
3
2
1
0
2
3
4
5
6
7
8
9
10
1
I
D
, DRAIN CURRENT (A)
r
DS(ON)
, DRAIN T
O
SOURCE
T
C
= -40
o
C
ON RESIST
ANCE (
)
0
V
GS
= 10V
PULSE DURATION = 80
s
T
C
= 25
o
C
T
C
= 125
o
C
DUTY CYCLE
2%
RFM4N35, RFM4N40, RFP4N35, RFP4N40
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
-50
0
50
100
150
200
2
1.5
1
0.5
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
ON RESIST
ANCE
0
I
D
= 4A
V
GS
= 10V
1.5
1
0.5
T
J
, JUNCTION TEMPERATURE (
0
C)
NORMALIZED GA
TE
THRESHOLD V
O
L
T
A
GE
-50
0
50
125
150
175
0
V
DS
= 10V
I
D
= 250
A
0
10
20
30
40
50
700
600
500
400
300
200
100
800
V
DS
, DRAIN TO SOURCE (V)
C, CAP
A
CIT
ANCE (pF)
C
OSS
C
RSS
C
ISS
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GS
500
375
250
125
0
10
8
6
4
2
0
V
DS,
DRAIN T
O
SOURCE V
O
L
T
A
GE
(V)
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
V
GS,
GA
TE T
O
SOURCE V
O
L
T
A
GE
(V)
V
DD
= BV
DSS
V
DD
= BV
DSS
DRAIN SOURCE VOLTAGE
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
GATE
SOURCE
VOLTAGE
R
L
=100
I
G(REF)
= 0.45mA
V
GS
= 10V
TO
t, TIME (
s)
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFM4N35, RFM4N40, RFP4N35, RFP4N40