4-462
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
Intersil Corporation 1999
RFG50N05, RFP50N05
50A, 50V, 0.022 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFET'S manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors.
Formerly developmental type TA09772.
Features
50A, 50V
r
DS(ON)
= 0.022
UIS Rating Curve (Single Pulse)
175
o
C Operating Temperature
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N05
TO-247
RFG50N05
RFP50N05
TO-220AB
RFP50N05
NOTE: When ordering, include the entire part number.
G
D
S
JEDEC STYLE TO-247
JEDEC TO-220AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Data Sheet
July 1999
File Number
2873.3
4-463
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG50N05, RFP50N05
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
50
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
50
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
50
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
120
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
132
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.88
W/
o
C
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
as
Refer to UIS SOA Curve
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 0.250
A, V
GS
= 0V (Figure 9)
50
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 0.250
A (Figure 8)
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
A
Zero Gate Voltage Drain Current,
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 150
o
C
-
-
25
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 50A, V
GS
= 10V (Figure 7)
-
-
0.022
Turn-On Time
t
(ON)
V
DD
= 25V, I
D
25A, R
L
= 1.0
,
R
GS
= 6.67
, V
GS
= 10V
(Figure 11)
-
-
100
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
55
-
ns
Turn-Off Delay Time
t
d(OFF)
-
60
-
ns
Fall Time
t
f
-
15
-
ns
Turn-Off Time
t
(OFF)
-
-
100
ns
Total Gate Charge
Q
g(tot)
V
GS
= 0-20V
V
DD
- 40V, I
D
= 50A
R
L
= 0.8
,
I
G(REF)
= 1.5mA
(Figure 11)
-
-
160
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0-10V
-
-
80
nC
Threshold Gate Charge
Q
g(th)
V
GS
= 0-2V
-
-
6
nC
Thermal Resistance Junction to Case
R
JC
-
-
1.14
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-220
-
-
62
o
C/W
TO-247
30
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 50A
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 50A, dl
SD
/dt = 100A/
s
-
125
ns
NOTES:
2. Pulsed test: pulse width
300
s duty cycle
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFG50N05, RFP50N05
4-464
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
0.2
0.4
0.6
0.8
1.0
1.2
10
0
50
100
T
C
, CASE TEMPERATURE (C
o
)
I
D
, DRAIN CURRENT (A)
25
125
150
175
75
20
30
40
50
60
1
10
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
1
100
100
0.1
DC
T
j
= MAX RATED
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
T
C
= 25
o
C
10
100
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
AS
, A
V
ALANCHE CURRENT (A)
0.01
10
1000
If R = 0
Starting T
j
= 25
o
C
tav = (L)(Ias)/(1.3 RATED BV
dss
- V
dd
)
If R
0
tav = (L/R) In[(Ias x R)/(1.3 RATED BV
dss
- V
dd
) + 1]
I
dm
Starting T
j
= 150
o
C
120
100
80
0
0
1
2
3
4
5
I
D
, DRAIN CURRENT (A)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
20
40
60
V
GS
= 4V
PULSE DURATION = 80
s
DUTY CYCLE
=
0.5% MAX
T
C
= 25
o
C
V
GS
= 8V
V
GS
= 7V
V
GS
= 9V
V
GS
= 5V
V
GS
= 6V
V
GS
= 10V
I
DS(ON)
, DRAIN T
O
SOURCE CURRENT (A)
100
20
0
2.5
5
7.5
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
40
0
80
60
-55
o
C
25
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
120
175
o
C
RFG50N05, RFP50N05
4-465
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs. JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified (Continued)
NORMALIZED DRAIN T
O
SOURCE
T
J,
JUNCTION TEMPERATURE (C
o
)
1.5
1
0.5
0
-50
50
150
ON RESIST
ANCE
2
2.5
0
100
V
GS
= 10V, I
D
= 50A
200
3
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
NORMALIZED GA
TE T
O
SOURCE
T
J,
JUNCTION TEMPERATURE (C
o
)
1.2
0.8
0.4
0
-50
50
150
THRESHOLD V
O
L
T
A
G
E
1.8
0
100
V
GS
= V
DS
200
2.0
I
D
= 250
A
NORMALIZED DRAIN T
O
SOURCE
T
J,
JUNCTION TEMPERATURE (C
o
)
1.2
0.8
0.4
0
-50
50
150
BREAKDO
WN V
O
L
T
A
G
E
1.6
0
100
200
2.0
I
D
= 250
A
2000
1000
1
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C, CAP
A
CIT
ANCE (pF)
5000
0
3000
4000
5
C
ISS
C
OSS
C
RSS
10
15
20
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
50
37.5
25
12.5
0
10
8
6
4
0
2
GATE
SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
0.75BV
DSS
0.50BV
DSS
0.25 BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 1
I
G(REF)
= 1.5mA
V
GS
= 10V
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DS
, DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
t, TIME (
s)
20
80
DRAIN SOURCE VOLTAGE
I
G(REF)
I
G(ACT)
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
RFG50N05, RFP50N05
4-466
Test Circuits and Waveforms
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
FIGURE 14. SWITCHING TIME TEST CIRCUIT
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20V
V
DS
V
GS
I
g(REF)
0
0
RFG50N05, RFP50N05
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