4-467
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG50N06, RFP50N06, RF1S50N06SM
50A, 60V, 0.022 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49018.
Features
50A, 60V
r
DS(ON)
= 0.022
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N06
TO-247
RFG50N06
RFP50N06
TO-220AB
RFP50N06
RF1S50N06SM
TO-263AB
F1S50N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.
G
D
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
3575.4
4-468
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG50N06, RFP50N06
RF1S50N06SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
50
(Figure 5)
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
(Figure 6, 14, 15)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
131
0.877
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 11)
60
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 10)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60V,
V
GS
= 0V
T
C
= 25
o
C
-
-
1
A
T
C
= 150
o
C
-
-
50
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 50A, V
GS
= 10V (Figures 9)
-
-
0.022
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 50A
R
L
= 0.6
, V
GS
= 10V
R
GS
= 3.6
(Figure 13)
-
-
95
ns
Turn-On Delay Time
t
d(ON)
-
12
-
ns
Rise Time
t
r
-
55
-
ns
Turn-Off Delay Time
t
d(OFF)
-
37
-
ns
Fall Time
t
f
-
13
-
ns
Turn-Off Time
t
OFF
-
-
75
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0 to 20V
V
DD
= 48V, I
D
= 50A,
R
L
= 0.96
I
g(REF)
= 1.45mA
(Figure 13)
-
125
150
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0 to 10V
-
67
80
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0 to 2V
-
3.7
4.5
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V
f = 1MHz
(Figure 12)
-
2020
-
pF
Output Capacitance
C
OSS
-
600
-
pF
Reverse Transfer Capacitance
C
RSS
-
200
-
pF
Thermal Resistance Junction to Case
R
JC
(Figure 3)
-
-
1.14
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-247
-
-
30
o
C/W
TO-220, TO-263
-
-
62
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 50A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 50A, dI
SD
/dt = 100A/
s
-
-
125
ns
RFG50N06, RFP50N06, RF1S50N06SM
4-469
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
PO
WER DISSIP
A
TION MUL
TIPLIER
T
C
, CASE TEMPERATURE (
o
C)
50
40
30
20
10
0
25
50
75
100
125
150
175
I
D
,
DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
60
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, RECTANGULAR PULSE DURATION (s)
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
SINGLE PULSE
t
1
t
2
THERMAL IMPED
ANCE
Z
JC
, NORMALIZED
0.01
0.02
0.05
0.1
0.2
0.5
2
400
100
10
1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
100
s
10ms
100ms
DC
V
DSS(MAX)
= 60V
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
2
10
3
t, PULSE WIDTH (ms)
V
GS
= 20V
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I
25
175
T
C
150
------------------------
=
I
DM
,
PEAK CURRENT (A)
40
T
C
= 25
o
C
RFG50N06, RFP50N06, RF1S50N06SM
4-470
NOTE: Refer to Intersil Application Notes 9321 and 9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
300
100
10
1
0.01
0.1
1
10
t
AV,
TIME IN AVALANCHE (ms)
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
AS
,
A
V
ALANCHE CURRENT (A)
125
100
75
50
25
0
0
1.5
3.0
4.5
6.0
7.5
I
D
,
DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80
s
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
125
100
75
50
25
0
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
-55
o
C
175
o
C
25
o
C
V
DD
= 15V
2.5
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
PULSE DURATION = 80
s
V
GS
= 10V, I
D
= 50A
ON RESIST
ANCE
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
200
THRESHOLD V
O
L
T
A
GE
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED GA
TE
V
GS
= V
DS
, I
D
= 250
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
A
RFG50N06, RFP50N06, RF1S50N06SM
4-471
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified (Continued)
C
ISS
C
OSS
C
RSS
4000
3000
2000
1000
0
0
5
10
15
20
25
C
,
CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
60
45
30
15
0
10
7.5
5.0
2.5
0
20
I
g(REF)
I
g(ACT)
80
I
g(REF)
I
g(ACT)
t, TIME (
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
DS
,
DRAIN T
O
SOURCE V
O
L
T
A
GE (V)
V
GS
,
G
A
TE T
O
SOURCE V
O
L
T
A
GE (V)
R
L
= 1.2
I
g(REF)
= 1.45mA
V
GS
= 10V
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFG50N06, RFP50N06, RF1S50N06SM
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