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Электронный компонент: RFP70N03

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1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFP70N03, RF1S70N03SM
70A, 30V, 0.010 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49025.
Features
70A, 30V
r
DS(ON)
= 0.010
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve (Single Pulse)
175
o
C Operating Temperature
Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP70N03
TO-220AB
RFP70N03
RF1S70N03SM
TO-263AB
F1S70N03
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A
D
G
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
File Number
3404.4
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
30
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
20
V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
70
200
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Figures 5, 13, 14
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
1.0
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
A, V
GS
= 0V (Figure 10)
30
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
A (Figure 9)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
-
-
1
A
V
DS
= 30V, V
GS
= 0V, T
C
= 150
o
C
-
-
50
A
Gate to Source Leakage Current
I
GSS
V
GS
=
20V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 70A, V
GS
= 10V (Figure 8)
-
-
0.010
Turn-On Time
t
ON
V
DD
= 15V, I
D
70A,
R
L
= 0.214
, V
GS
=
10V,
R
GS
= 2.5
-
-
80
ns
Turn-On Delay Time
t
d(ON)
-
20
-
ns
Rise Time
t
r
-
20
-
ns
Turn-Off Delay Time
t
d(OFF)
-
40
-
ns
Fall Time
t
f
-
25
-
ns
Turn-Off Time
t
OFF
-
-
125
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 24V, I
D
70A,
R
L
= 0.343
I
g(REF)
= 1.0mA
(Figure 12)
-
215
260
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
120
145
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
6.5
8.0
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 11)
-
3300
-
pF
Output Capacitance
C
OSS
-
1750
-
pF
Reverse Transfer Capacitance
C
RSS
-
750
-
pF
Thermal Resistance Junction to Case
R
JC
(Figure 3)
-
-
1.0
o
C/W
Thermal Resistance Junction to Ambient
R
JA
TO-220, TO-263
-
-
62
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 70A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 70A, dI
SD
/dt = 100A/
s
-
-
125
ns
RFP70N03, RF1S70N03SM
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
T
C
, CASE TEMPERATURE (
o
C)
10
20
30
40
50
60
70
80
25
50
75
100
125
150
175
I
D
, DRAIN CURRENT (A)
10
-5
Z
JC
, NORMALIZED THERMAL IMPED
ANCE
t
1
, RECTANGULAR PULSE DURATION (s)
10
-4
10
-3
10
-2
10
-1
10
-0
10
1
10
-2
10
-1
10
0
SINGLE PULSE
0.01
0.5
0.2
0.1
0.05
0.02
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
300
100
10
1
1
10
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS(MAX)
= 30V
100
s
1ms
10ms
100ms
DC
I
D
, DRAIN CURRENT (A)
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
300
I
DM
100
0.01
10
0.10
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L) (I
AS
)/(1.3 x RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R) ln [(I
AS
x R)/(1.3 x RATED BV
DSS
- V
DD
) +1]
I
AS
, A
V
ALANCHE CURRENT (A)
1
10
RFP70N03, RF1S70N03SM
4
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
1.5
3.0
4.5
6.0
7.5
I
D
, DRAIN CURRENT (A)
0
40
80
120
160
200
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 8V
V
GS
= 10V
PULSE DURATION = 80
s
T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
DRAIN CURRENT (A)
0
40
80
120
160
200
25
o
C
-55
o
C
175
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
PULSE DURATION = 80
s
ON RESIST
ANCE
V
GS
= 10V, I
D
= 70A
DUTY CYCLE = 0.5% MAX
2.0
1.6
1.2
0.8
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED
0.4
GA
TE THRESHOLD V
O
L
T
A
GE
V
GS
= V
DS
, I
D
= 250
A
2.0
1.6
1.2
0.4
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
0.8
BREAKDO
WN V
O
L
T
A
G
E
I
D
= 250
A
0
0
5
10
15
20
25
1000
2000
3000
5000
6000
7000
4000
C, CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
RFP70N03, RF1S70N03SM
5
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 12. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
FIGURE 15. SWITCHING TIME TEST CIRCUIT
FIGURE 16. SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
30.0
22.5
15.0
7.5
0
10.0
7.5
5.0
2.5
0
t, TIME (
s)
20
I
g
REF
(
)
I
g
ACT
(
)
---------------------
80
I
g
REF
(
)
I
g
ACT
(
)
---------------------
V
DS
, DRAIN SOURCE V
O
L
T
A
GE (V)
V
GS
, GA
TE SOURCE V
O
L
T
A
GE (V)
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
R
L
= 0.43
I
g(REF)
= 3.0mA
V
GS
= 10V
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP70N03, RF1S70N03SM