1
RHRP8100
8A, 1000V Hyperfast Diode
The RHRP8100 is a hyperfast diode with soft recovery
characteristic (t
rr
< 60ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49060.
Symbol
Features
Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <55ns
Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRP8100
TO-220AC
RHRP8100
NOTE: When ordering, use the entire part number.
K
A
ANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RHRP8100
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
1000
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
1000
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1000
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 140
o
C)
8
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
16
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
100
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
75
W
Avalanche Energy (See Figures 8 and 9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL
20
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet
January 2000
File Number
3667.2
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 8A
-
-
3.0
V
I
F
= 8A, T
C
= 150
o
C
-
-
2.5
V
I
R
V
R
= 1000V
-
-
100
A
V
R
= 1000V, T
C
= 150
o
C
-
-
500
A
t
rr
I
F
= 1A, dI
F
/dt = 100A/
s
-
-
55
ns
I
F
= 8A, dI
F
/dt = 100A/
s
-
-
65
ns
t
a
I
F
= 8A, dI
F
/dt = 100A/
s
-
30
-
ns
t
b
I
F
= 8A, d
I
F
/dt = 100A/
s
-
20
-
ns
Q
RR
I
F
= 8A, dI
F
/dt = 100A/
s
-
175
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
30
-
pF
R
JC
-
-
2.0
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse Recovery Charge.
C
J
= Junction Capacitance.
R
JC
= Thermal resistance junction to case.
pw = Pulse Width.
D = Duty Cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
V
F
, FORWARD VOLTAGE (V)
I
F
, FOR
W
ARD CURRENT (A)
1
40
0.5
10
0
0.5
1
1.5
2
2.5
3
25
o
C
100
o
C
175
o
C
4
3.5
V
R
, REVERSE VOLTAGE (V)
0
200
400
600
800
500
0.01
0.1
1
10
I
R
, REVERSE CURRENT (
A)
1000
100
0.001
25
o
C
100
o
C
175
o
C
RHRP8100
3
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
curves vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
I
F
, FORWARD CURRENT (A)
0.5
0
40
10
8
1
20
30
t
,
RECO
VER
Y TIMES (ns)
4
tb
50
trr
ta
60
T
C
= 25
o
C, dI
F
/dt = 200A/
s
20
40
60
t
,
RECO
VER
Y TIMES (ns)
I
F
, FORWARD CURRENT (A)
0.5
0
8
1
4
80
ta
trr
100
tb
T
C
= 100
o
C, dI
F
/dt = 200A/
s
100
80
60
t
,
RECO
VER
Y TIMES (ns)
I
F
, FORWARD CURRENT (A)
0.5
0
8
1
4
ta
40
120
trr
tb
20
T
C
= 175
o
C, dI
F
/dt = 200A/
s
10
2
0
100
115
145
175
160
4
6
8
T
C
, CASE TEMPERATURE (
o
C)
I
F(A
V)
, A
VERA
GE FOR
W
ARD CURRENT (A)
130
DC
SQ. WAVE
V
R
, REVERSE VOLTAGE (V)
40
20
80
0
50
100
150
200
C
J
, JUNCTION CAP
A
CIT
ANCE (pF)
100
60
RHRP8100
4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I
MAX
= 1A
L = 40mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RHRP8100
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