1
File Number
3211.3
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
RURG5060
50A, 600V Ultrafast Diode
The RURG5060 is an ultrafast diode with soft recovery
characteristics (t
rr
< 65ns). It has low forward voltage drop
and is of silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast recovery with soft recovery characteristic
minimizes ringing and electrical noise in many power
switching circuits, thus reducing power loss in the switching
transistors.
Formerly developmental type TA09909.
Symbol
Features
Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <65ns
Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC STYLE 2 LEAD TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
RURG5060
TO-247
RURG5060
NOTE: When ordering, use the entire part number.
K
A
CATHODE
(BOTTOM
CATHODE
ANODE
SIDE METAL)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURG5060
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RRM
600
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
600
V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
600
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 102
o
C)
50
A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FRM
(Square Wave, 20kHz)
100
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
FSM
(Halfwave, 1 Phase, 60Hz)
500
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150
W
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
40
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet
January 2000
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 50A
-
-
1.6
V
I
F
= 50A, T
C
= 150
o
C
-
-
1.4
V
I
R
V
R
= 600V
-
-
250
A
V
R
= 600V, T
C
= 150
o
C
-
-
1.5
mA
t
rr
I
F
= 1A, dI
F
/dt = 100A/
s
-
-
65
ns
I
F
= 50A, dI
F
/dt = 100A/
s
-
-
75
ns
t
a
I
F
= 50A, dI
F
/dt = 100A/
s
-
30
-
ns
t
b
I
F
= 50A, dI
F
/dt = 100A/
s
-
20
-
ns
R
JC
-
-
1
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time at dI
F
/dt = 100A/
s (See Figure 6), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current at dI
F
/dt = 100A/
s (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
300
100
10
1
0
I
F
, FOR
W
ARD CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
175
o
C
100
o
C
25
o
C
0.5
1.0
1.5
2.0
2.5
1000
100
10
1.0
0.1
0.01
0
I
R
, REVERSE CURRENT (
A)
100
200
300
400
600
V
R
, REVERSE VOLTAGE (V)
175
o
C
100
o
C
25
o
C
500
RURG5060
3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Typical Performance Curves
(Continued)
60
50
40
30
20
10
0
1
t, TIME (ns)
I
F
, FORWARD CURRENT (A)
10
60
trr
ta
tb
60
50
40
30
20
10
0
60
80
100
120
140
160
180
T
C
, CASE TEMPERATURE (
o
C)
I
F(A
V)
, A
VERA
GE FOR
W
ARD CURRENT (A)
SQ. WAVE
DC
Test Circuits and Waveforms
FIGURE 5. t
rr
TEST CIRCUIT
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
R
G
L
V
DD
IGBT
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 1.4A
L = 40mH
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
RURG5060
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