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Электронный компонент: RURP650CC

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6-55
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
RURP640CC, RURP650CC,
RURP660CC
6A, 400V - 600V Ultrafast Dual Diodes
Package
JEDEC TO-220AB
Symbol
CATHODE
ANODE 2
ANODE 1
CATHODE
(FLANGE)
A
1
K
A
2
Features
Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . +175
o
C
Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 600V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Description
The RURP640CC, RURP650CC, and RURP660CC are
ultrafast dual diodes with soft recovery characteristics (t
RR
<
55ns). They have low forward voltage drop and are silicon
nitride passivated ion-implanted epitaxial planar construc-
tion.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits, reduc-
ing power loss in the switching transistors.
NOTE: When ordering, use the entire part number.
Formerly developmental type TA49038.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RURP640CC
TO-220AB
RURP640C
RURP650CC
TO-220AB
RURP650C
RURP660CC
TO-220AB
RURP660C
April 1995
Absolute Maximum Ratings
(per leg) T
C
= +25
o
C, Unless Otherwise Specified
RURP640CC
RURP650CC
RURP660CC
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
400
500
600
V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
400
500
600
V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
400
500
600
V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +155
o
C)
6
6
6
A
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
12
12
12
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 phase, 60Hz)
60
60
60
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
50
50
50
W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . E
AVL
10
10
10
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to +175
-65 to +175
-65 to +175
o
C
File Number
4007
6-56
Specifications RURP640CC, RURP650CC, RURP660CC
Electrical Specifications
(per leg) T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITION
LIMITS
UNITS
RURP640CC
RURP650CC
RURP660CC
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
V
F
I
F
= 6A, T
C
= +25
o
C
-
-
1.5
-
-
1.5
-
-
1.5
V
I
F
= 6A, T
C
= +150
o
C
-
-
1.2
-
-
1.2
-
-
1.2
V
I
R
V
R
= 400V, T
C
= +25
o
C
-
-
100
-
-
-
-
-
-
A
V
R
= 500V, T
C
= +25
o
C
-
-
-
-
-
100
-
-
-
A
V
R
= 600V, T
C
= +25
o
C
-
-
-
-
-
-
-
-
100
A
I
R
V
R
= 400V, T
C
= +150
o
C
-
-
500
-
-
-
-
-
-
A
V
R
= 500V, T
C
= +150
o
C
-
-
-
-
-
500
-
-
-
A
V
R
= 600V, T
C
= +150
o
C
-
-
-
-
-
-
-
-
500
A
t
RR
I
F
= 1A, dI
F
/dt = 200A/
s
-
-
55
-
-
55
-
-
55
ns
I
F
= 6A, dI
F
/dt = 200A/
s
-
-
60
-
-
60
-
-
60
ns
t
A
I
F
= 6A, dI
F
/dt = 200A/
s
-
28
-
-
28
-
-
28
-
ns
t
B
I
F
= 6A, dI
F
/dt = 200A/
s
-
16
-
-
16
-
-
16
-
ns
Q
RR
I
F
= 6A, dI
F
/dt = 200A/
s
-
150
-
-
150
-
-
150
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
25
-
-
25
-
-
25
-
pF
R
JC
-
-
3
-
-
3
-
-
3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
s, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
JC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
C1
L
LOOP
DUT
Q
3
R
3
Q
4
Q
2
R
1
R
2
-V
4
Q
1
-V
2
0
0
+V
1
t
1
t
2
t
3
R
4
+V
3
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
t
1
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
R
4
t
A(MIN)
10
R
4
+ L
LOOP
dt
dI
F
I
F
t
RR
t
A
t
B
0
I
RM
0.25 I
RM
V
R
V
RM
6-57
RURP640CC, RURP650CC, RURP660CC
Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +25
o
C
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +100
o
C
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs FORWARD
CURRENT AT +175
o
C
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
V
F
, FORWARD VOLTAGE (V)
1
30
0.5
10
0
0.5
2.5
1
2
1.5
+175
o
C
+25
o
C
+100
o
C
I
F
, FOR
W
ARD CURRENT (A)
0
600
400
300
200
100
0.01
0.1
1
10
500
100
500
+175
o
C
+25
o
C
V
R
, REVERSE VOLTAGE (V)
0.001
+100
o
C
I
R
, REVERSE CURRENT (
A)
I
F
, FORWARD CURRENT (A)
1
0
40
50
6
t
RR
t
B
30
t
A
20
t, RECOVER
Y TIMES (ns)
10
T
C
= +25
o
C, dI
F
/dt = 200A/
s
0.5
t
A
t
RR
t
B
I
F
, FORWARD CURRENT (A)
0
60
90
75
45
30
t, RECOVER
Y TIMES (ns)
T
C
= +100
o
C, dI
F
/dt = 200A/
s
1
6
0.5
15
t
B
t
RR
I
F
, FORWARD CURRENT (A)
0
100
80
60
40
t, RECOVER
Y TIMES (ns)
20
t
A
T
C
= +175
o
C, dI
F
/dt = 200A/
s
1
6
0.5
DC
SQ. WAVE
5
1
0
155
160
170
150
175
165
2
3
4
T
C
, CASE TEMPERATURE (
o
C)
I
F(A
V)
, A
VERAGE FOR
W
ARD CURRENT (A)
6
145
6-58
RURP640CC, RURP650CC, RURP660CC
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
Typical Performance Curves
(Continued)
V
R
, REVERSE VOLTAGE (V)
30
15
0
0
50
100
150
200
75
C
J
, JUNCTION CAP
ACIT
ANCE (pF)
60
45
12V
Q
2
Q
1
12V
130
DUT
CURRENT
SENSE
+
L
R
1M
V
DD
130
IMAX = 1A
L = 40mH
R < 0.1
EAVL = 1/2LI
2
[VAVL/(VAVL - V
DD
)]
Q
1
AND Q
2
ARE 1000V MOSFETs
-
V
DD
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L