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Электронный компонент: 10BQ030

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SCHOTTKY RECTIFIER
1 Amp
10BQ030
Bulletin PD-20708 rev. G 0
7/04
1
Major Ratings and Characteristics
I
F(AV)
Rectangular
1.0
A
waveform
V
RRM
30
V
I
FSM
@ t
p
= 5 ms sine
430
A
V
F
@
1.0Apk, T
J
= 125C
0.30
V
T
J
range
- 55 to 150
C
Characteristics
10BQ030 Units
The 10BQ030 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/ Features
www.irf.com
Case Styles
10BQ030
SMB
I
F(AV)
= 1 Amp
V
R
= 30V
10BQ030
Bulletin PD-20708 rev. G 0
7/04
2
www.irf.com
Part number
10BQ030
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
30
Voltage Ratings
V
FM
Max. Forward Voltage Drop
(1)
0.420
V
@ 1A
0.470
V
@ 2A
V
FM
Max. Forward Voltage Drop
(1)
0.300
V
@ 1A
0.370
V
@ 2A
0.5
mA
T
J
= 25 C
I
RM
Max. Reverse Leakage Current (1)
5.0
mA
T
J
= 100 C
15
mA
T
J
= 125 C
C
T
Max. Junction Capacitance
200
pF
V
R
= 5V
DC
, (test signal range 100KHz to 1Mhz) 25C
L
S
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/s
(Rated V
R
)
T
J
= 25 C
T
J
= 125 C
V
R
= rated V
R
Electrical Specifications
Parameters
10BQ Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max. Junction Temperature Range (*) - 55 to 150
C
T
stg
Max. Storage Temperature Range
- 55 to 150
C
R
thJL
Max. Thermal Resistance Junction
25
C/W DC operation
to Lead
(**)
R
thJA
Max. Thermal Resistance Junction
80
C/W
to Ambient
wt
Approximate Weight
0.10 (0.003) g (oz.)
Case Style
SMB
Similar DO-214AA
Device Marking
IR1E
Thermal-Mechanical Specifications
Parameters
10BQ
Units
Conditions
Absolute Maximum Ratings
I
F(AV)
Max. Average Forward Current
1.0
A
50% duty cycle @ T
L
= 106 C, rectangular wave form.
I
FSM
Max. Peak One Cycle Non-Repetitive
430
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 6
90
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
3.0
mJ
T
J
= 25 C, I
AS
= 1A, L = 6mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Parameters
10BQ Units
Conditions
Following any rated
load condition and
with rated V
RRM
applied
<
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
(*) dPtot
1
dTj
Rth( j-a)
10BQ030
Bulletin PD-20708 rev. G 0
7/04
3
www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
100
1000
0
10
20
30
R
T
J
u
n
c
t
i
o
n
C
a
pa
c
i
t
a
n
c
e -
C
(
p
F
)
Reverse Voltage - V (V)
T = 25C
J
0.1
1
10
0
0.2
0.4
0.6
0.8
F
FM
Forward Voltage Drop - V (V)
I
n
s
t
a
n
ta
n
eou
s
F
o
r
w
a
r
d
C
u
r
r
en
t
-
I
(
A
)
T = 125C
T = 25C
J
J
0.0001
0.001
0.01
0.1
1
10
0
10
20
30
R
R
100C
75C
50C
25C
R
e
v
e
r
s
e C
u
r
r
en
t -
I
(
m
A
)
T = 125C
J
Reverse Voltage - V (V)
10BQ030
Bulletin PD-20708 rev. G 0
7/04
4
www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
10
100
1000
10
100
1000
10000
FS
M
N
o
n
-
R
e
p
e
t
i
t
i
v
e
S
u
r
g
e
C
u
r
r
e
n
t
-
I
(
A
)
p
At Any Rated Load Condition
And With Rated V Applied
Following Surge
RRM
Square Wave Pulse Duration - t (microsec)
90
100
110
120
130
0
0.4
0.8
1.2
1.6
DC
A
l
l
o
wa
b
l
e
Ca
s
e
T
e
mp
e
r
a
t
u
r
e -
(
C)
F(AV)
see note (2)
Average Forward Current - I (A)
Square wave (D = 0.50)
80% Rated V applied
R
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0
0.1
0.2
0.3
0.4
0.5
0
0.4
0.8
1.2
1.6
DC
A
v
er
a
g
e P
o
w
e
r
L
o
s
s
-
(
W
a
t
t
s
)
F(AV)
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Average Forward Current - I (A)
10BQ030
Bulletin PD-20708 rev. G 0
7/04
5
www.irf.com
3.80 (.150)
3.30 (.130)
4.70 (.185)
4.10 (.161)
2.15 (.085)
1.80 (.071)
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
4.0 (.157)
2.0 TYP.
(.079 TYP.)
2.5 TYP.
(.098 TYP.)
SOLDERING PAD
CATHODE
ANODE
1
2
1
2
POLARITY
PART NUMBER
4.2 (.165)
IR LOGO
YYWWX
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
2nd digit of the YEAR
SITE ID
WEEK
CURRENT
VOLTAGE
IR1E
Device Marking: IR1E
Dimensions in millimeters and (inches)
Outline SMB
For recommended footprint and soldering techniques refer to application note #AN-994
Outline Table
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.