1
25MT060WF
Target Data 05/01
V
CES
= 600V
V
CE(on) typ.
= 2.2V @
V
GE
= 15V, I
C
= 25A
T
C
= 25C
Absolute Maximum Ratings
"FULL-BRIDGE" IGBT MTP
V
CES
Collector-to-Emitter Voltage
600
V
I
C
Continuos Collector Current
@ T
C
= 25C
50
A
@ T
C
= 100C
25
I
CM
Pulsed Collector Current
200
I
LM
Peak Switching Current
200
I
F
Diode Continuous Forward Current
@ T
C
= 100C
25
I
FM
Peak Diode Forward Current
200
V
GE
Gate-to-Emitter Voltage
20
V
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
P
D
Maximum Power Dissipation
@ T
C
= 25C
900
W
@ T
C
= 100C
400
Parameters
Max
Units
Warp Speed IGBT
Gen. 4 Warp Speed IGBT Technology
HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
Very Low Conduction and Switching Losses
Optional SMT Thermystor Inside
Aluminum Nitride DBC
Very Low Stray Inductance Design for
High Speed Operation
Features
Optimized for Welding, UPS and SMPS Applications
Operating Frequencies > 20 kHz Hard Switching,
>200 kHz Resonant Mode
Low EMI, requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal Resistance
Benefits
25MT060WF
Target Data 05/01
2
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
V
GE
= 0V, I
C
= 250A
V
CE(on)
Collector-to-Emitter Voltage
1.85
V
GE
= 15V, I
C
= 25A
1.7
V
GE
= 15V, I
C
= 25A, T
J
= 150C
V
GE(th)
Gate Threshold Voltage
3
6
I
C
= 250A
V
GE(th)
/ Temperature Coeff. of
-
mV/C V
GE
= V
CE
, I
C
= 500A
T
J
Threshold Voltage
g
fe
Forward Transconductance
40
S
V
CE
= 100V, I
C
= 25A
I
CES
Collector-to-Emiter Leaking Current
250
A
V
GE
= 0V, V
CE
= 600V
5000
V
GE
= 0V, V
CE
= 600V, T
J
= 150C
V
F M
Diode Forward Voltage Drop
1.3
V
I
F
= 25A, V
GE
= 0V
1.2
I
F
= 25A, V
GE
= 0V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current
100
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Thermal- Mechanical Specifications
T
J
Operating Junction Temperature Range
- 40
150
C
T
STG
Storage Temperature Range
- 40
125
R
thJC
Junction-to-Case
IGBT
0.7
C/ W
Diode
0.9
R
thCS
Case-to-Sink
Module
0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Weight
66
g
Parameters
Min
Typ
Max
Units
Q
g
Total Gate Charge (turn-on)
180
nC
I
C
= 25A
Q
ge
Gate-Emitter Charge (turn-on)
25
V
CC
= 400V
Q
gc
Gate-Collector Charge (turn-on)
63
V
GE
= 15V
E
on
Turn-On Switching Loss
950
J
R
g1
= R
g2
= 5
,
I
C
= 25A
E
off(1)
Turn-Off Switching Loss
320
V
CC
= 480V
E
ts(1)
Total Switching Loss
1270
V
GE
= 15V
C
ies
Input Capacitance
4000
pF
V
GE
= 0V
C
oes
Output Capacitance
260
V
CC
= 30V
C
res
Reverse Transfer Capacitance
68
f = 1.0 MHz
trr
Diode Reverse Recovery Time
50
ns
V
R
= 200V, I
C
= 25A
Irr
Diode Peak Reverse Current
4.5
A
di/dt = 200A/s
Qrr
Diode Recovery Charge
112
nC
di
(rec)
M/
dt
Diode PeakRate of Fall of Recovery
250
A/s
During t
b
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Target Data 05/01
3
25MT060WF
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/01
Outline Table
Data and specifications subject to change without notice.
This product has been designed for Industrial Level.
Qualification Standards can be found on IR's Web site.
Dimensions in millimeters
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