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Электронный компонент: 35GQ100

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SCHOTTKY RECTIFIER
35 Amp, 100V
35GQ100
Major Ratings and Characteristics
Description/Features
7/13/01
CASE STYLE
IR Case Style TO-254AA
www.irf.com
1
Characteristics
35GQ100
Units
I
F(AV)
35
A
V
RRM
100
V
I
FSM
@ tp = 8.3ms half-sine
270
A
V
F
@ 35Apk, T
J
=125C
1.0
V
T
J
,T
stg
Operating and storage
-55 to 150
C
HIGH EFFICIENCY SERIES
The 35GQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermeticly isolated
TO-254AA package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source control drawings to TX, TXV
and S quality levels.
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
Lightweight
CATHODE OPEN ANODE
3 .7 8 ( .14 9 )
3 .5 3 ( .13 9 )
-A -
1 3 .8 4 ( .5 45 )
1 3 .5 9 ( .5 35 )
6.6 0 ( .2 60 )
6.3 2 ( .2 49 )
20 .32 ( .8 0 0 )
20 .07 ( .7 9 0 )
13 .84 ( .5 4 5 )
13 .59 ( .5 3 5 )
-C -
1 .1 4 ( .0 45 )
0 .8 9 ( .0 35 )
3 .81 ( .1 5 0 )
1 .2 7 ( .0 50 )
1 .0 2 ( .0 40 )
-B -
.1 2 ( .0 0 5 )
3X
2 X
3.81 ( .15 0 )
1 2 3
1 7.4 0 ( .68 5 )
1 6.8 9 ( .66 5 )
31 .40 ( 1 .2 3 5 )
30 .39 ( 1 .1 9 9 )
.5 0 ( .0 20 ) M C A M B
.2 5 ( .0 10 ) M C
L EG EN D
1 - CO LL
2 - E MIT
3 - GA TE
PD -94232B
35GQ100
2
www.irf.com
Part number
35GQ100
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
100
Parameters
Limits Units
Conditions
I
F(AV)
Max. Average Forward Current
35
A
50% duty cycle @ T
C
= 91C, square waveform
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
270
A
@ t
p
= 8.3 ms half-sine
Surge Current
Absolute Maximum Ratings
Q
Pulse Width < 300s, Duty Cycle < 2%
Parameters
Limits
Units
Conditions
T
J
Max.Junction Temperature Range
-55 to 150
C
T
stg
Max. Storage Temperature Range
-55 to 150
C
R
thJC
Max. Thermal Resistance, Junction
1.1
C/W
DC operation
See Fig. 4
to Case
wt
Weight (Typical)
9.3
g
Die Size (Typical)
200X200 mils
Case Style
TO-254AA
Thermal-Mechanical Specifications
Parameters
Limits
Units
Conditions
V
FM
Max. Forward Voltage Drop
1.0
V
@ 35A
T
J
= -55C
See Fig. 1
Q
1.42
V
@ 70A
1.05
V
@ 35A
T
J
= 25C
1.52
V
@ 70A
1.0
V
@ 35A
T
J
= 125C
1.47
V
@ 70A
I
RM
Max. Reverse Leakage Current
0.036
mA
T
J
= 25C
See Fig. 2
Q
7.5
mA
T
J
= 100C
V
R
= rated V
R
28
mA
T
J
= 125C
C
T
Max. Junction Capacitance
1375
pF
V
R
= 5V
DC
( 1MHz, 25C )
L
S
Typical Series Inductance
7.8
nH
Measured from anode lead to cathode lead
Electrical Specifications
6mm ( 0.025 in.) from package
35GQ100
www.irf.com
3
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
0
20
40
60
80
100
Reverse Voltage -VR (V)
100
1000
10000
Junction Capacitance - C
T
(pF)
TJ = 25C
0
20
40
60
80
100
Reverse Voltage - VR (V)
0.0001
0.001
0.01
0.1
1
10
100
1000
Reverse Current - I
R
( mA )
125C
75C
25C
100C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Forward Voltage Drop - V F (V)
1
10
100
Instantaneous Forward Current - I
F
(A)
Tj = -55C
Tj = 125C
Tj = 25C
35GQ100
4
www.irf.com
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
0
10
20
30
40
50
60
Average Forward Current - I F(AV) (A)
0
20
40
60
80
100
120
140
160
180
Allowable Case Temprature - (

C)
35GQ100
R thJC = 1.1C/W
DC