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IGBT FOUR PAK MODULE
GB75YF120N
Bulletin I27209 01/06
1
Features
Benefits
V
CES
= 1200V
I
C
= 75A @ T
C
= 67C
V
CE(on)
typ. = 3.4V
Parameter
Max.
Units
Absolute Maximum Ratings
Parameter
Min
Typical
Maximum
Units
Thermal and Mechanical Characteristics
V
CES
Collector-to-Emitter Voltage
1200
V
I
C
@
Tc=25C
Continuous Collector Current
100
A
I
C
@
Tc=80C
Continuous Collector Current
67
I
CM
Pulsed Collector Current (Ref. Fig. C.T.5)
200
I
LM
Clamped Inductive Load Current
200
I
F
@
Tc=25C
Diode Continuous Forward Current
40
I
F
@
Tc=80C
Diode Continuous Forward Current
25
I
FM
Diode Maximum Forward Current
150
V
GE
Gate-to-Emitter Voltage
20
V
P
D
@
Tc=25C
Maximum Power Dissipation (IGBT)
480
W
P
D
@
Tc=80C
Maximum Power Dissipation (IGBT)
270
T
J
Maximum Operating Junction Temperature
150
C
T
STG
Storage Temperature Range
-40 to +125
V
ISOL
Isolation Voltage
AC 2500 (MIN)
V
R
JC
(IGBT)
Junction-to-Case IGBT
-
-
0.26
C/W
R
JC
(Diode)
Junction-to-Case Diode
-
-
1.00
R
CS
(Module)
Case-to-Sink, flat, greased surface
-
0.05
-
Mounting Torque (M5)
2.7
-
3.3
N*m
Weight
-
170
-
g
ECONO2 4PAK
Square RBSOA
HEXFRED low Qrr, low Switching Energy
Positive V
CE(on)
Temperature Coefficient
Copper Baseplate
Low Stray Inductance Design
Benchmark Efficiency for SMPS appreciation
in particular HF welding
Rugged Transient Performance
Low EMI, Requires Less Snubbing
Direct Mounting to Heatsink space saving
PCB Solderable Terminals
Low Junction to Case Thermal Resistance
GB75YF120N
2
Bulletin I27209 01/06
BV
(CES)
Collector-to-Emitter Breakdown Voltage
1200
-
-
V
V
GE
= 0 IC = 500A
V
CE(ON)
Collector-to-Emitter Voltage
-
3.4
4.0
V
I
C
= 75A V
GE
= 15V
-
3.8
4.5
I
C
= 100A V
GE
= 15V
-
4.0
4.5
I
C
= 75A V
GE
= 15V T
J
= 125C
-
4.53
5.1
I
C
= 100A V
GE
= 15V T
J
= 125C
V
GE
(th)
Gate Threshold Voltage
4.0
5.0
6.0
V
CE
= V
GE
IC = 250A
V
GE
(th)/
T
J
Thresold Voltage temp. coefficient
-
-11
-
mV/C V
CE
= V
GE
IC = 1mA (25C-125C)
I
CES
Zero Gate Voltage Collector Current
-
7
250
A
V
GE
= 0 V
CE =
1200V
-
580
2000
V
GE
= 0 V
CE =
1200V Tj = 125C
V
FM
Diode Forward Voltage Drop
-
3.9
5.0
V
I
F
= 75A
-
4.43
5.8
I
F
= 100A
-
4.37
5.4
I
F
= 75A Tj = 125C
-
5.02
6.4
I
F
= 100A Tj = 125C
I
GES
Gate-to-Emitter Leakage Current
-
-
200
nA
V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
Q
G
Total Gate Charge (turn-on)
-
630
-
I
C
= 50A
Q
GE
Gate-to-Emitter Charge (turn-on)
-
65
-
nC
V
CC
= 600A
Q
GC
Gate-to-Collector Charge (turn-on)
-
250
-
V
GE
= 15V
E
ON
Turn-On Switching Loss
-
1505
-
J
I
C
= 50A V
CC
= 600V
E
OFF
Turn-Off Switching Loss
-
2411
-
V
GE
= 15V R
G
=
4.7 L = 500H
E
TOT
Total Switching Loss
-
3916
-
Tj = 25C
E
ON
Turn-On Switching Loss
-
2248
-
J
I
C
= 50A V
CC
= 600V
E
OFF
Turn-Off Switching Loss
-
3351
-
V
GE
= 15V R
G
=
4.7 L = 500H
E
TOT
Total Switching Loss
-
7599
-
Tj = 125C
t
d(on)
Turn-On delay time
-
169
-
ns
I
C
= 50A V
CC
= 600V
t
r
Rise time
-
71
-
V
GE
= 15V R
G
=
4.7 L =500H
t
d(off)
Turn-Off delay time
-
393
-
Tj = 125C
t
f
Fall time
-
136
-
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Tj = 150C I
C
= 150A
R
G
=10 V
GE
= 15V to 0
SCSOA
Short Circuit Safe Operating Area
10
-
-
s
Tj = 150C
V
CC
= 900V V
P
= 1200V
R
G
=
10 V
GE
= 15V to 0
I
rr
Diode Peak Rev. Recovery Current
-
1.45
2.5
A
Tj = 25C
-
2.35
4.0
Tj = 125C
t
rr
Diode Rev. Recovery Time
-
0.401 0.5
s
Tj = 25C
-
0.655 0.8
s
Tj = 125C
Q
rr
Total Rev. Recovery Charge
-
0.181 0.4
C
Tj = 25C
-
0.54
1.5
C
Tj = 125C
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
Energy losses include "tail" and diode reverse recovery.
V
CC
= 600V I
F
= 75A
dI/ dt = 10A/s
GB75YF120N
3
Bulletin I27209 01/06
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
T
C
= 25C; T
J
150C
Fig. 4 - Reverse Bias SOA
T
J
= 150C; V
GE
=15V
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100 120 140 160
0
100
200
300
400
500
T
C
(C)
I
C
(A)
T
C
(C)
P
D
(W)
10
100
1000
10000
1
10
100
1000
T
C
(C)
P
D
(W)
1
10
100
1000
10000
0.01
0.1
1
10
100
1000
V
CE
(V)
IC (A)
GB75YF120N
4
Bulletin I27209 01/06
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= 25C; tp = 500s
Fig. 7 - Typ. Diode Forward Characteristics
tp = 500s
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 125C; tp = 500s
0
1
2
3
4
5
6
0
20
40
60
80
100
120
140
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0
20
40
60
80
100
120
140
160
25C
125C
V
CE
(V)
I
CE
(A)
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
140
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
V
CE
(V)
I
CE
(A)
V
F
(V)
I
F
(A)
Fig. 8 - Typical V
CE
vs. V
GE
T
J
= 25C
7
9
11
13
15
17
19
0
2
4
6
8
10
12
14
16
18
20
ICE = 75A
ICE = 50A
ICE = 25A
V
GE
(V)
V
CE
(V)
GB75YF120N
5
Bulletin I27209 01/06
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= 125C
Fig. 10 - Typ. Transfer Characteristics
V
CE
= 20V; tp = 500s
5
6
7
8
9
10
11
12
0
50
100
150
200
250
300
TJ = 25C
TJ = 125C
7
9
11
13
15
17
19
0
2
4
6
8
10
12
14
16
18
20
ICE = 75A
ICE = 50A
ICE = 25A
V
GE
(V)
V
CE
(V)
V
GE
(V)
I
CE
(A)
Fig. 11 - Typ Zero Gate Voltage Collector
Current
400
600
800
1000
1200
0.001
0.01
0.1
1
TJ = 125C
TJ = 25C
V
CES
(V)
I
CES
(mA)
Fig. 12 - Typ Threshold Voltage
0
0.2
0.4
0.6
0.8
1
2
2.5
3
3.5
4
4.5
5
5.5
TJ = 125C
TJ = 25C
I
C
(mA)
V
geth
(V)
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