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Parameter
Max
Units
V
R
Cathode-to-Anode Voltage
600
V
I
F
@ T
C
= 100C
Continuous Forward Current
4.0
I
FSM
Single Pulse Forward Current
25
I
FRM
Maximum Repetitive Forward Current
16
P
D
@ T
C
= 25C
Maximum Power Dissipation
25
P
D
@ T
C
= 100C
Maximum Power Dissipation
10
T
J
Operating Junction and
T
STG
Storage Temperature Range
Bulletin PD -2.399 rev. A 11/00
Ultrafast Recovery
Ultrasoft Recovery
Very Low
I
RRM
Very Low
Q
rr
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA04TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA04TB60 is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (I
RRM
) and does not
exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA04TB60 is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA04TB60
V
R
= 600V
V
F
= 1.8V
Q
rr
* = 40nC
di
(rec)M
/dt * = 280A/s
*
125C
Absolute Maximum Ratings
-55 to +150
W
A
C
TO-220AC
1
1
BASE
CATHODE
2
3
CATHODE
ANODE
2
4
HFA04TB60
Bulletin PD-2.399 rev. A 11/00
2
www.irf.com
Parameter
Min
Typ
Max
Units
T
lead
!
Lead Temperature
300
C
R
thJC
Thermal Resistance, Junction to Case
5.0
R
th
A
"
Thermal Resistance, Junction to Ambient
80
R
th
S
#
Thermal Resistance, Case to Heat Sink
0.5
2.0
g
0.07
(oz)
6.0
12
Kg-cm
5.0
10
lbfin
Parameter
Min Typ Max Units Test Conditions
t
rr
Reverse Recovery Time
17
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
28
42
ns
T
J
= 25C
t
rr2
38
57
T
J
= 125C
I
F
= 4.0A
I
RRM1
Peak Recovery Current
2.9
5.2
T
J
= 25C
I
RRM2
3.7
6.7
T
J
= 125C
V
R
= 200V
Q
rr1
Reverse Recovery Charge
40
60
T
J
= 25C
Q
rr2
70
105
T
J
= 125C
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
280
T
J
= 25C
di
(rec)M
/dt2
During t
b
235
T
J
= 125C
Parameter
Min Typ Max Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
600
V
I
R
= 100A
1.5
1.8
I
F
= 4.0A
1.8
2.2
V
I
F
= 8.0A
1.4
1.7
I
F
= 4.0A, T
J
= 125C
0.17
3.0
V
R
= V
R
Rated
44
300
T
J
= 125C, V
R
= 0.8 x V
R
Rated
D
Rated
C
T
Junction Capacitance
4.0
8.0
pF
V
R
= 200V
Measured lead to lead 5mm from
package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
A/s
nC
A
L
S
Series Inductance
8.0
nH
See Fig. 3
See Fig. 2
See Fig. 1
Thermal - Mechanical Characteristics
See Fig. 5, 6 & 16
See Fig. 7& 8
See Fig. 9 & 10
See Fig. 11 & 12
K/W
V
FM
Max Forward Voltage
A
Max Reverse Leakage Current
I
RM
Wt
Weight
Mounting Torque
!
0.063 in. from Case (1.6mm) for 10 sec
"
Typical Socket Mount
#
Mounting Surface, Flat, Smooth and Greased
T
HFA04TB60
Bulletin PD-2.399 rev. A 11/00
3
www.irf.com
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current,
Reverse Current - I
R
(A)
Junction Capacitance -C
T
(pF)
Instantaneous Forward Current - I
F
(A)
0.1
1
10
100
0.0
1.0
2.0
3.0
4.0
5.0
6.0
FM
Forward Voltage Drop - V (V)
T = 150C
T = 125C
T = 25C
J
J
J
0.001
0.01
0.1
1
10
100
1000
0
100
200
300
400
500
R
T = 150C
T = 125C
T = 25C
J
J
J
Reverse Voltage - V (V)
1
10
100
1
10
100
1000
T = 25C
J
Reverse Voltage - V (V)
R
A
Forward Voltage Drop - V
FM
( V )
HFA04TB60
Bulletin PD-2.399 rev. A 11/00
4
www.irf.com
Fig. 7 - Typical Stored Charge vs. di
f
/dt
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt,
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt
Fig. 6 - Typical Recovery Current vs. di
f
/dt
di (rec) M/dt-
(A /s)
Qrr-
(nC)
Irr-
(
A)
trr-
(nC)
20
25
30
35
40
45
50
100
1000
f
di /dt - (A/s)
I = 8.0A
I = 4.0A
F
F
V = 200V
T = 125C
T = 25C
R
J
J
0
2
4
6
8
10
12
14
100
1000
f
I = 8.0A
I = 4.0A
V = 200V
T = 125C
T = 25C
R
J
J
di /dt - (A/s)
F
F
0
40
80
120
160
200
100
1000
f
di /dt - (A/s)
I = 8.0A
I = 4.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
100
1000
100
1000
f
di /dt - (A/s)
A
I = 8.0A
I = 4.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
HFA04TB60
Bulletin PD-2.399 rev. A 11/00
5
www.irf.com
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
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