Parameter
Max.
Units
V
R
Cathode-to-Anode Voltage
600
V
I
F
@ T
C
= 100C
Continuous Forward Current
8.0
I
FSM
Single Pulse Forward Current
60
A
I
FRM
Maximum Repetitive Forward Current
24
P
D
@ T
C
= 25C
Maximum Power Dissipation
36
P
D
@ T
C
= 100C
Maximum Power Dissipation
14
T
J
Operating Junction and
T
STG
Storage Temperature Range
Bulletin PD -20607 rev. B 12/00
Ultrafast Recovery
Ultrasoft Recovery
Very Low
I
RRM
Very Low
Q
rr
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA08TB60S is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques
it features a superb combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available. With basic ratings of 600
volts and 8 amps continuous current, the HFA08TB60S is especially well suited for
use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast
recovery time, the HEXFRED product line features extremely low values of peak
recovery current (I
RRM
) and does not exhibit any tendency to "snap-off" during the
t
b
portion of recovery. The HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is
ideally suited for applications in power supplies (PFC Boost diode) and power
conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA08TB60S
Absolute Maximum Ratings
-55 to +150
W
C
V
R
= 600V
V
F
(typ.)* = 1.4V
I
F(AV)
= 8.0A
Q
rr
(typ.)= 65nC
I
RRM
= 5.0A
t
rr
(typ.)
= 18ns
di
(rec)M
/dt (typ.) = 240A/s
*
125C
D
2
Pak
1
+
3
2
BASE
(N/C)
(A)
(K)
_
1
HFA08TB60S
Bulletin PD-20607 rev. B 11/00
2
Parameter
Min.
Typ.
Max.
Units
T
lead
!
Lead Temperature
300
C
R
thJC
Thermal Resistance, Junction to Case
3.5
R
thJA
"
Thermal Resistance, Junction to Ambient
80
Wt
Weight
2.0
g
0.07
(oz)
Parameter
Min. Typ. Max. Units Test Conditions
t
rr
Reverse Recovery Time
18
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
37
55
ns
T
J
= 25C
t
rr2
55
90
T
J
= 125C
I
F
= 8.0A
I
RRM1
Peak Recovery Current
3.5
5.0
T
J
= 25C
I
RRM2
4.5
8.0
T
J
= 125C
V
R
= 200V
Q
rr1
Reverse Recovery Charge
65
138
T
J
= 25C
Q
rr2
124
360
T
J
= 125C
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
240
T
J
= 25C
di
(rec)M
/dt2
During t
b
210
T
J
= 125C
Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
600
V
I
R
= 100A
1.4
1.7
I
F
= 8.0A
1.7
2.1
V
I
F
= 16A
1.4
1.7
I
F
= 8.0A, T
J
= 125C
0.3
5.0
V
R
= V
R
Rated
100
500
T
J
= 125C, V
R
= 0.8 x V
R
Rated
D
Rated
C
T
Junction Capacitance
10
25
pF
V
R
= 200V
Measured lead to lead 5mm from
package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
A/s
nC
A
L
S
Series Inductance
8.0
nH
See Fig. 3
See Fig. 2
See Fig. 1
Thermal - Mechanical Characteristics
See Fig. 5, 6
See Fig. 7
See Fig. 8
K/W
V
FM
Max Forward Voltage
A
Max Reverse Leakage Current
I
RM
!
0.063 in. from Case (1.6mm) for 10 sec
"
Typical Socket Mount
HFA08TB60S
Bulletin PD-20607 rev. B 11/00
3
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
0.1
1
10
100
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
FM
T = 150C
T = 125C
T = 25C
J
J
J
Forward Voltage Drop - V (V)
0.001
0.01
0.1
1
10
100
1000
0
100
200
300
400
500
600
R
T = 150C
T = 125C
T = 25C
J
J
J
Reverse Voltage - V (V)
1
10
100
1
10
100
1000
T = 25C
J
Reverse Voltage - V (V)
R
A
Instantaneous Forward Current - I
F
(A)
Reverse Current - I
R
(A)
Junction Capacitance -C
T
(pF)
HFA08TB60S
Bulletin PD-20607 rev. B 11/00
4
Fig. 7 - Typical Stored Charge vs. di
f
/dt
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt
Fig. 6 - Typical Recovery Current vs. di
f
/dt
0
20
40
60
80
100
1000
f
di /dt - (A/s)
I = 16A
I = 8.0A
I = 4.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
0
5
10
15
20
100
1000
f
di /dt - (A/s)
I = 16A
I = 8.0A
I = 4.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
0
100
200
300
400
500
100
1000
f
di /dt - (A/s)
I = 16A
I = 8.0A
I = 4.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
100
1000
10000
100
1000
f
di /dt - (A/s)
I = 16A
I = 8.0A
I = 4.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
trr-
(nC)
Irr-
(
A)
di (rec) M/dt-
(A /s)
Qrr-
(nC)
HFA08TB60S
Bulletin PD-20607 rev. B 11/00
5
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
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