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Parameter
Max
Units
V
R
Cathode-to-Anode Voltage
600
V
I
F
@ T
C
= 100C
Continuous Forward Current
15
I
FSM
Single Pulse Forward Current
150
A
I
FRM
Maximum Repetitive Forward Current
60
P
D
@ T
C
= 25C
Maximum Power Dissipation
74
P
D
@ T
C
= 100C
Maximum Power Dissipation
29
T
J
Operating Junction and
T
STG
Storage Temperature Range
Bulletin PD -2.340 rev. A 11/00
Ultrafast Recovery
Ultrasoft Recovery
Very Low
I
RRM
Very Low
Q
rr
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA15PB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 15 amps continuous current, the HFA15PB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (I
RRM
) and does not exhibit any
tendency to "snap-off" during the t
b
portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA15PB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA15PB60
Absolute Maximum Ratings
-55 to +150
W
C
V
R
= 600V
V
F
(typ.)* = 1.3V
I
F(AV)
= 15A
Q
rr
(typ.)= 80nC
I
RRM
(typ.)
= 4.0A
t
rr
(typ.)
= 19ns
di
(rec)M
/dt (typ.)* = 160A/s
*
125C
1
1
BASE
CATHODE
2
3
CATHODE
ANODE
2
4
TO-247AC (Modified)
HFA15PB60
Bulletin PD-2.340 rev. A 11/00
2
www.irf.com
Parameter
Min
Typ
Max
Units
T
lead
!
Lead Temperature
300
C
R
th
JC
Thermal Resistance, Junction to Case
1.7
R
th
JA
"
Thermal Resistance, Junction to Ambient
40
R
th
CS
#
Thermal Resistance, Case to Heat Sink
0.25
6.0
g
0.21
(oz)
6.0
12
Kg-cm
5.0
10
lbfin
Thermal - Mechanical Characteristics
K/W
Wt
Weight
Mounting Torque
!
0.063 in. from Case (1.6mm) for 10 sec
"
Typical Socket Mount
#
Mounting Surface, Flat, Smooth and Greased
Parameter
Min Typ Max Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
600
V
I
R
= 100A
1.3
1.7
I
F
= 15A
1.5
2.0
V
I
F
= 30A
1.2
1.6
I
F
= 15A, T
J
= 125C
1.0
10
V
R
= V
R
Rated
400 1000
T
J
= 125C, V
R
= 0.8 x V
R
Rated
D
Rated
C
T
Junction Capacitance
25
50
pF
V
R
= 200V
Measured lead to lead 5mm from
package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
L
S
Series Inductance
12
nH
See Fig. 3
See Fig. 2
See Fig. 1
V
FM
Max Forward Voltage
A
Max Reverse Leakage Current
I
RM
Parameter
Min Typ Max Units Test Conditions
t
rr
Reverse Recovery Time
19
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
42
60
ns
T
J
= 25C
t
rr2
74
120
T
J
= 125C
I
F
= 15A
I
RRM1
Peak Recovery Current
4.0
6.0
T
J
= 25C
I
RRM2
6.5
10
T
J
= 125C
V
R
= 200V
Q
rr1
Reverse Recovery Charge
80
180
T
J
= 25C
Q
rr2
220
600
T
J
= 125C
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
188
T
J
= 25C
di
(rec)M
/dt2
During t
b
160
T
J
= 125C
A/s
nC
A
See Fig. 5, 10
See Fig. 6
See Fig. 7
See Fig. 8
HFA15PB60
Bulletin PD-2.340 rev. A 11/00
3
www.irf.com
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
Instantaneous Forward Current - I
F
(A)
Junction Capacitance -C
T
(pF)
Reverse Current - I
R
(A)
1
10
100
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
FM
Forward Voltage Drop - V (V)
T = 150C
T = 125C
T = 25C
J
J
J
A
Forward Voltage Drop - V
FM
( V )
0.01
0.1
1
10
100
1000
10000
0
100
200
300
400
500
600
R
T = 150C
A
T = 125C
T = 25C
J
J
J
Reverse Voltage - V (V)
10
100
10
100
1000
T = 25C
J
Reverse Voltage - V (V)
R
A
A
HFA15PB60
Bulletin PD-2.340 rev. A 11/00
4
www.irf.com
Fig. 7 - Typical Stored Charge vs. di
f
/dt
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt
Fig. 5 - Typical Reverse Recovery Time vs. di
f
/dt
Fig. 6 - Typical Recovery Current vs. di
f
/dt
trr-
(ns)
Irr-
(
A)
Qrr-
(nC)
di (rec) M/dt-
(A /s)
0
20
40
60
80
100
100
1000
f
di /dt - (A/s)
A
I = 30A
I = 15A
I = 5.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
0
5
10
15
20
25
100
1000
f
di /dt - (A/s)
A
I = 30A
I = 15A
I = 5.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
0
200
400
600
800
100
1000
f
di /dt - (A/s)
A
I = 30A
I = 15A
I = 5.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
100
1000
10000
100
1000
f
di /dt - (A/s)
I = 30A
A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125C
T = 25C
R
J
J
HFA15PB60
Bulletin PD-2.340 rev. A 11/00
5
www.irf.com
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
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