Bulletin PD-20615 rev. B 11/03
Ultrafast Recovery
Ultrasoft Recovery
Very Low
I
RRM
Very Low
Q
rr
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA15TB60S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA15TB60S is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (I
RRM
) and does not
exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA15TB60S is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA15TB60S
V
R
= 600V
V
F
= 1.7V
Q
rr
* = 84nC
di
(rec)M
/dt * = 188A/s
*
125C
D
2
Pak
Parameter
Max.
Units
V
R
Cathode-to-Anode Voltage
600
V
I
F
@ T
C
= 100C
Continuous Forward Current
15
I
FSM
Single Pulse Forward Current
150
A
I
FRM
Maximum Repetitive Forward Current
60
P
D
@ T
C
= 25C
Maximum Power Dissipation
74
P
D
@ T
C
= 100C
Maximum Power Dissipation
29
T
J
Operating Junction and
T
STG
Storage Temperature Range
Absolute Maximum Ratings
-55 to +150
W
C
1
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Anode
1
3
Base
Cathode
2
N/C
2
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HFA15TB60S
Bulletin PD-20615 rev. B 11/03
Parameter
Min. Typ. Max. Units Test Conditions
t
rr
Reverse Recovery Time
23
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
50
60
ns
T
J
= 25C
t
rr2
105
120
T
J
= 125C
I
F
= 15A
I
RRM1
Peak Recovery Current
4.5
6.0
T
J
= 25C
I
RRM2
6.5
10
T
J
= 125C
V
R
= 200V
Q
rr1
Reverse Recovery Charge
84
180
T
J
= 25C
Q
rr2
241
600
T
J
= 125C
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
188
T
J
= 25C
di
(rec)M
/dt2
During t
b
160
T
J
= 125C
Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
600
V
I
R
= 100A
1.3
1.7
I
F
= 15A
1.5
2.0
V
I
F
= 30A
1.2
1.6
I
F
= 15A, T
J
= 125C
1.0
10
V
R
= V
R
Rated
400 1000
T
J
= 125C, V
R
= 0.8 x V
R
Rated
D
Rated
C
T
Junction Capacitance
25
50
pF
V
R
= 200V
Measured lead to lead 5mm from
package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
L
S
Series Inductance
8.0
nH
See Fig. 3
See Fig. 2
See Fig. 1
V
FM
Max Forward Voltage
A
Max Reverse Leakage Current
I
RM
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
A/s
nC
A
See Fig. 5
See Fig. 7
See Fig. 8
Parameter
Min.
Typ.
Max.
Units
T
lead
Lead Temperature
300
C
R
thJC
Thermal Resistance, Junction to Case
1.7
R
thJA
Thermal Resistance, Junction to Ambient
80
Wt
Weight
2.0
g
0.07
(oz)
Thermal - Mechanical Characteristics
K/W
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
See Fig. 6
3
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HFA15TB60S
Bulletin PD-20615 rev. B 11/03
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
mal
Res
pons
e
(
Z
)
1
thJ
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
1
10
100
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
FM
T = 150C
T = 125C
T = 25C
J
J
J
A
Forward Voltage Drop - V (V)
0.01
0.1
1
10
100
1000
10000
0
200
400
600
R
T = 150C
A
T = 125C
T = 25C
J
J
J
Reverse Voltage - V (V)
Instantaneous Forward Current - I
F
(A)
Junction Capacitance -C
T
(pF)
Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics
Reverse Current - I
R
(A)
10
100
10
100
1000
T = 25C
J
Reverse Voltage - V (V)
R
A
A
4
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HFA15TB60S
Bulletin PD-20615 rev. B 11/03
Fig. 7 - Typical Stored Charge vs. di
f
/dt
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt
Fig. 6 - Typical Recovery Current vs. di
f
/dt
0
20
40
60
80
100
100
1000
f
di /dt - (A/s)
A
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125C
T = 25C
R
J
J
100
1000
10000
100
1000
f
di /dt - (A/s)
A
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125C
T = 25C
R
J
J
0
100
200
300
400
500
600
700
800
100
1000
f
di /dt - (A/s)
A
I = 30A
I = 15A
I = 5.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
0
5
10
15
20
25
100
1000
f
di /dt - (A/s)
A
I = 30A
I = 15A
I = 5.0A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
trr-
(nC)
Qrr-
(nC)
Irr-
( A)
di (rec) M/dt-
(A /s)
5
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HFA15TB60S
Bulletin PD-20615 rev. B 11/03
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
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