Parameter
Max
Units
V
R
Cathode-to-Anode Voltage
1200
V
I
F
@ T
C
= 100C
Continuous Forward Current
16
I
FSM
Single Pulse Forward Current
190
A
I
FRM
Maximum Repetitive Forward Current
64
P
D
@ T
C
= 25C
Maximum Power Dissipation
151
P
D
@ T
C
= 100C
Maximum Power Dissipation
60
T
J
Operating Junction and
T
STG
Storage Temperature Range
Bulletin PD -20605 rev. B 11/00
Ultrafast Recovery
Ultrasoft Recovery
Very Low
I
RRM
Very Low
Q
rr
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA16TB120S is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120S
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (I
RRM
) and does not
exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA16TB120S
is ideally suited for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA16TB120S
Absolute Maximum Ratings
-55 to +150
W
C
V
R
= 1200V
V
F
(typ.)* = 2.3V
I
F(AV)
= 16A
Q
rr
(typ.)= 260nC
I
RRM
(typ.)
= 5.8A
t
rr
(typ.)
= 30ns
di
(rec)M
/dt (typ.)* = 76A/s
*
125C
1
1
BASE
CATHODE
2
3
CATHODE
ANODE
2
4
D
2
Pak
HFA16TB120S
Bulletin PD-20605 rev. B 11/00
2
www.irf.com
Parameter
Min
Typ
Max
Units
T
lead
!
Lead Temperature
300
C
R
th
JC
Thermal Resistance, Junction to Case
0.83
R
th
JA
"
Thermal Resistance, Junction to Ambient
80
2.0
g
0.07
(oz)
Parameter
Min Typ Max Units Test Conditions
t
rr
Reverse Recovery Time
30
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
90
135
ns
T
J
= 25C
t
rr2
164 245
T
J
= 125C
I
F
= 16A
I
RRM1
Peak Recovery Current
5.8
10
T
J
= 25C
I
RRM2
8.3
15
T
J
= 125C
V
R
= 200V
Q
rr1
Reverse Recovery Charge
260 675
T
J
= 25C
Q
rr2
680 1838
T
J
= 125C
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
120
T
J
= 25C
di
(rec)M
/dt2
During t
b
76
T
J
= 125C
Parameter
Min Typ Max Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
1200
V
I
R
= 100A
2.5
3.0
I
F
= 16A
3.2
3.93
V
I
F
= 32A
2.3
2.7
I
F
= 16A, T
J
= 125C
0.75
20
V
R
= V
R
Rated
375 2000
T
J
= 125C, V
R
= 0.8 x V
R
Rated
D
Rated
C
T
Junction Capacitance
27
40
pF
V
R
= 200V
Measured lead to lead 5mm from
package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
A/s
nC
A
L
S
Series Inductance
8.0
nH
See Fig. 3
See Fig. 2
See Fig. 1
Thermal - Mechanical Characteristics
See Fig. 5, 10
See Fig. 6
See Fig. 7
See Fig. 8
K/W
V
FM
Max Forward Voltage
A
Max Reverse Leakage Current
I
RM
Wt
Weight
!
0.063 in. from Case (1.6mm) for 10 sec
"
Typical Socket Mount
HFA16TB120
Bulletin PD-20605 rev. B 11/00
3
www.irf.com
Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
Instantaneous Forward Current - I
F
(A)
Reverse Current - I
R
(A)
Junction Capacitance -C
T
(pF)
0.1
1
10
100
0
2
4
6
8
T = 150C
T = 125C
T = 25C
J
J
J
Reverse Current - V
R
(V)
Reverse Current - V
R
(V)
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
J
Notes:
1. Duty factor D = t1/ t 2
2. Peak T = Pdm x ZthJC + Tc
Thermal Response (Z
thJC
)
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
1000
0
200
400
600
800
1000
1200
T = 150C
A
T = 125C
T = 25C
J
J
J
1
10
100
1000
1
10
100
1000
10000
T = 25C
J
A
HFA16TB120S
Bulletin PD-20605 rev. B 11/00
4
www.irf.com
Fig. 7 - Typical Stored Charge vs. di
f
/dt,
(per Leg)
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt,
(per Leg)
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt,
(per Leg)
Fig. 6 - Typical Recovery Current vs. di
f
/dt,
(per Leg)
di (rec) M/dt
(A /s)
Qrr
(nC)
Irr
( A)
trr
(nC)
di
f
/ dt (A/s)
di
f
/ dt (A/s)
di
f
/ dt (A/s)
di
f
/ dt (A/s)
20
70
120
170
220
270
100
1000
R
J
J
V = 200V
T = 125C
T = 25C
If = 16 A
If = 8 A
0
5
10
15
20
25
30
100
1000
If = 16 A
If = 8 A
R
J
J
V = 200V
T = 125C
T = 25C
0
200
400
600
800
1000
1200
1400
1600
100
1000
If = 16A
If = 8A
V = 200V
T = 125C
T = 25C
R
J
J
10
100
1000
10000
100
1000
V = 200V
T = 125C
T = 25C
R
J
J
If = 16A
If = 8A
HFA16TB120
Bulletin PD-20605 rev. B 11/00
5
www.irf.com
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
PDF 
ZIP