Parameter
Max.
Units
V
R
Cathode-to-Anode Voltage
600
V
I
F
@ T
C
= 25C
Continuous Forward Current
I
F
@ T
C
= 100C
Continuous Forward Current
25
I
FSM
Single Pulse Forward Current
225
I
FRM
Maximum Repetitive Forward Current
100
I
AR
Maximum Repetitive Avalanche Current
2.0
P
D
@ T
C
= 25C
Maximum Power Dissipation
125
P
D
@ T
C
= 100C
Maximum Power Dissipation
50
T
J
Operating Junction and
T
STG
Storage Temperature Range
PD -2.339
Ultrafast Recovery
Ultrasoft Recovery
Very Low
I
RRM
Very Low
Q
rr
Guaranteed Avalanche
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA25TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (I
RRM
) and does not exhibit any
tendency to "snap-off" during the t
b
portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA25TB60
V
R
= 600V
V
F
(typ.)* = 1.3V
I
F(AV)
= 25A
Q
rr
(typ.)= 112nC
I
RRM
= 10A
t
rr
(typ.)
= 23ns
di
(rec)M
/dt (typ.) = 250A/s
Absolute Maximum Ratings
-55 to +150
W
A
C
4/2/97
*
125C
TO-220AC
HFA25TB60
Parameter
Min.
Typ.
Max.
Units
T
lead
Lead Temperature
300
C
R
JC
Thermal Resistance, Junction to Case
1.0
R
JA
Thermal Resistance, Junction to Ambient
80
R
CS
Thermal Resistance, Case to Heat Sink
0.5
2.0
g
0.07
(oz)
6.0
12
Kg-cm
5.0
10
lbfin
Parameter
Min. Typ. Max. Units Test Conditions
t
rr
Reverse Recovery Time
23
I
F
= 1.0A, di
f
/dt = 200A/s, V
R
= 30V
t
rr1
50
75
ns
T
J
= 25C
t
rr2
105 160
T
J
= 125C
I
F
= 25A
I
RRM1
Peak Recovery Current
4.5
10
T
J
= 25C
I
RRM2
8.0
15
T
J
= 125C
V
R
= 200V
Q
rr1
Reverse Recovery Charge
112 375
T
J
= 25C
Q
rr2
420 1200
T
J
= 125C
di
f
/dt = 200A/s
di
(rec)M
/dt1
Peak Rate of Fall of Recovery Current
250
T
J
= 25C
di
(rec)M
/dt2
During t
b
160
T
J
= 125C
Parameter
Min. Typ. Max. Units
Test Conditions
V
BR
Cathode Anode Breakdown Voltage
600
V
I
R
= 100A
1.3
1.7
I
F
= 25A
1.5
2.0
V
I
F
= 50A
1.3
1.7
I
F
= 25A, T
J
= 125C
1.5
20
V
R
= V
R
Rated
600 2000
T
J
= 125C, V
R
= 0.8 x V
R
Rated
D
Rated
C
T
Junction Capacitance
55
100
pF
V
R
= 200V
Measured lead to lead 5mm from
package body
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Dynamic Recovery Characteristics @ T
J
= 25C (unless otherwise specified)
A/s
nC
A
L
S
Series Inductance
8.0
nH
See Fig. 3
See Fig. 2
See Fig. 1
Thermal - Mechanical Characteristics
See Fig. 5, 6 & 16
See Fig. 7& 8
See Fig. 9 & 10
See Fig. 11 & 12
K/W
V
FM
Max Forward Voltage
A
Max Reverse Leakage Current
I
RM
Wt
Weight
Mounting Torque
L=100H, duty cycle limited by max T
J
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
HFA25TB60
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
m
a
l
R
e
s
pons
e
(
Z
)
1
thJ
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig. 4 - Maximum Thermal Impedance Z
thjc
Characteristics
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
1
10
100
0.6
1.0
1.4
1.8
2.2
2.6
FM
T = 150C
T = 125C
T = 25C
J
J
J
A
Forward Voltage Drop - V (V)
0.01
0.1
1
10
100
1000
10000
0
100
200
300
400
500
600
R
T = 150C
A
T = 125C
T = 25C
J
J
J
Reverse Voltage - V (V)
10
100
1000
1
10
100
1000
T = 25C
J
Reverse Voltage - V (V)
R
A
A
Instantaneous Forward Current - I
F
(A)
Reverse Current - I
R
(A)
Junction Capacitance -C
T
(pF)
HFA25TB60
Fig. 7 - Typical Stored Charge vs. di
f
/dt
Fig. 8 - Typical di
(rec)M
/dt vs. di
f
/dt
Fig. 5 - Typical Reverse Recovery vs. di
f
/dt
Fig. 6 - Typical Recovery Current vs. di
f
/dt
0
5
10
15
20
25
30
100
1000
f
di /dt - (A/s)
A
I = 50A
I = 25A
I = 10A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
20
40
60
80
100
120
140
100
1000
f
di /dt - (A/s)
A
I = 50A
I = 25A
I = 10A
F
F
F
V = 200V
T = 125C
T = 25C
R
J
J
100
1000
10000
100
1000
f
di /dt - (A/s)
A
I = 50A
I = 25A
I = 10A
F
F
F
V = 200V
T = 125C
T = 25C
R
J
J
0
200
400
600
800
1000
1200
1400
100
1000
f
di /dt - (A/s)
A
I = 50A
I = 25A
I = 10A
V = 200V
T = 125C
T = 25C
R
J
J
F
F
F
trr-
(nC)
Irr- (
A
)
Qrr-
(nC)
di (rec) M/dt-
(A /s)
HFA25TB60
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
X I
RRM
Q
rr
=
2
5. di
(rec)M
/dt - Peak rate of change of
current during t
b
portion of t
rr
V
(AVAL)
R(RATED)
I
L(PK)
V
DECAY
TIME
Fig. 11 - Avalanche Test Circuit and Waveforms
Fig. 10 - Reverse Recovery Waveform and
Definitions
Fig. 9 - Reverse Recovery Parameter Test
Circuit
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. di
f
/dt - Rate of change of current
through zero crossing
2. I
RRM
- Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70H
V = 200V
R
0.01
G
D
S
dif/dt
ADJUST
CURRENT
MONITOR
HIGH-SPEED
SWITCH
DUT
Rg = 25 ohm
+
FREE-WHEEL
DIODE
Vd = 50V
L = 100H
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